NVF6P02T3G

NVF6P02T3G is a P-channel MOSFET transistor tailored for automotive use, boasting a voltage tolerance of 20V and a current capacity of 10A
4,370 Effective Inventory

NVF6P02T3G

Effective Inventory4,370

NVF6P02T3G is a P-channel MOSFET transistor tailored for automotive use, boasting a voltage tolerance of 20V and a current capacity of 10A

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NVF6P02T3G DataSheet
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NVF6P02T3G Details

The NVF6P02T3G is a power MOSFET transistor from ON Semiconductor, designed for high-speed switching applications in power supply and motor control circuits. This transistor features a low on-state resistance and fast switching characteristics, making it suitable for efficient power management and control.

Pinout

  • 1 (G): Gate
  • 2 (D): Drain
  • 3 (S): Source

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

  • Low On-State Resistance: Provides efficient power management with minimal voltage drop.
  • High-Speed Switching: Enables fast switching transitions for rapid circuit response.
  • High Power Dissipation: Capable of handling high power levels with effective heat dissipation.
  • Enhanced Efficiency: Improves overall system efficiency in power control applications.
  • Compact Design: Housed in a compact package for space-saving circuit layouts.

Application

  • Power Supply: Ideal for power supply circuits requiring efficient switching and power management.
  • Motor Control: Used in motor control systems for precise and responsive control of electric motors.
  • Inverter Systems: Suitable for inverter systems where high-speed switching is essential for power conversion.

Where to Use

The NVF6P02T3G is recommended for applications demanding high-speed switching and efficient power control, commonly found in power supply units, motor controllers, and inverter systems. It is a reliable solution for achieving optimal performance and energy efficiency.

How to Use

Connect the NVF6P02T3G in your circuit by wiring the Gate, Drain, and Source pins according to the application requirements. Ensure proper voltage and current ratings are observed for safe operation. Utilize fast switching techniques for improved efficiency. For detailed usage instructions, consult the datasheet.

Application Circuit

The application circuit diagram for the NVF6P02T3G demonstrates the connection setup for integrating the MOSFET into a power supply or motor control system. Proper gate driving, voltage levels, and thermal considerations are crucial for optimal performance and reliability.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

  • VN0106N3: A comparable power MOSFET transistor offering similar switching characteristics.
  • NJM2386R: An alternative MOSFET transistor suitable for high-speed switching applications.

Complementary

The NVF6P02T3G can be paired with the NVF6N60T, a complementary MOSFET transistor with enhanced power handling capabilities, for optimized power control and efficiency in complex systems.

Ensure compatibility and proper design considerations when combining complementary components for seamless integration and performance.

Frequently Asked Questions

Q: What is the maximum voltage rating of the NVF6P02T3G?

A: The NVF6P02T3G has a maximum voltage rating of [insert voltage rating here]. Refer to the datasheet for detailed specifications and operating limits.

Q: Is the NVF6P02T3G suitable for high-frequency applications?

A: Yes, the NVF6P02T3G is designed for high-speed switching applications, making it suitable for high-frequency operation. Ensure proper circuit design and heat management for optimal performance.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active, Not Rec Compliance PbAHP
Package Type SOT-223-4 / TO-261-4D Case Outline 0.0318
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 4000
ON Target Y Channel Polarity P-Channel
Configuration Single V(BR)DSS Min (V) -20
VGS Max (V) 1 VGS(th) Max (V) -1
ID Max (A) 10 PD Max (W) 8.3
RDS(on) Max @ VGS = 2.5 V (mΩ) 70 RDS(on) Max @ VGS = 4.5 V (mΩ) 50
Qg Typ @ VGS = 10 V (nC) 15 Ciss Typ (pF) 900
Pricing ($/Unit) $0.6529

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification NVF6P02T3G PDF Download

FAQs

What is NVF6P02T3G?

The NVF6P02T3G is a power MOSFET transistor designed by ON Semiconductor. It is a P-channel enhancement-mode field-effect transistor (FET) commonly used for power management applications in various electronic devices.

How Does NVF6P02T3G Work?

The NVF6P02T3G works by controlling the flow of current between the source and drain terminals based on the voltage applied to the gate terminal. As a P-channel MOSFET, it conducts current when a negative voltage is applied to the gate, allowing power switching and regulation in electronic circuits.

How Many Pins does NVF6P02T3G have and What are the Functions of the Pinout Configuration?

The NVF6P02T3G is housed in a SOT-223 package. The pinout configuration includes:

  • GATE: Gate terminal for controlling the MOSFET.
  • DRAIN: Drain terminal for the output voltage.
  • SOURCE: Source terminal connected to the ground or negative supply.

What are the Pros and Cons of NVF6P02T3G?

Pros:

  • Low On-Resistance: Provides efficient power management with low conduction losses.
  • Compact Package: SOT-223 package offers space-efficient and reliable mounting.
  • Enhancement-Mode: Easily controlled by voltage signals, allowing for simple circuit design.
  • High Voltage Capability: Suitable for applications requiring high voltage handling capabilities.

Cons:

  • Gate Voltage Polarity: Being a P-channel device, requires negative gate voltage for conduction, which may not be compatible with all circuits.
  • Heat Dissipation: May require additional heat sinking for high-power applications to prevent overheating.

Are There Any Equivalents/Alternatives to NVF6P02T3G for Recommendation?

  • The NDP6020P from ON Semiconductor is a similar P-channel MOSFET alternative.
  • Alternatives to the NVF6P02T3G include the IRF4905PbF from Infineon and the FQP27P06 from Fairchild Semiconductor.

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