NVBG060N090SC1

N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
5,190 Effective Inventory

NVBG060N090SC1

Effective Inventory5,190

N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

Quality Assurance

Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

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Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

Shipping & Payment

About Shipping

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

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NVBG060N090SC1 DataSheet

Pricing (USD)

Quantity Unit Price Ext. Price
1 $20.401 $20.40
30 $19.498 $584.94

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

Interested Parts

Rapid Quote

Please submit RFQ for NVBG060N090SC1 or email to us: Email: [email protected], we will contact you in 12 hours.

NVBG060N090SC1 Description

The NVBG060N090SC1 is a high-performance Silicon Carbide MOSFET from ON Semiconductor, designed for automotive applications requiring high voltage and current handling capabilities. This device features low ON resistance, fast switching capability, and excellent thermal performance, making it suitable for harsh industrial environments.

Features

  • 600V / 90A rating: Offers high voltage and current handling capabilities ideal for automotive applications.
  • Silicon carbide material: Provides excellent thermal performance, fast switching capability, and low ON resistance.
  • High temperature operation: Designed to operate efficiently within a wide temperature range.
  • Low ON resistance: Enables efficient power conversion and minimizes power loss.
  • Excellent thermal performance: Reduces the risk of overheating and ensures reliable device operation.
  • High reliability: Manufactured with robust construction to ensure high MTBF (mean time between failures).
  • RoHS compliant: Meets the requirements for reducing hazardous substances in electronic devices.

Application

The NVBG060N090SC1 is commonly used in various applications, including RF power amplification, transmitting and receiving systems, radar systems, microwave communication networks, satellite communication systems, phased array antennas, wireless infrastructure, and military applications.

Where to Use:

  • Military applications
  • Satellite communication systems
  • Wireless infrastructure
  • Radar systems
  • Phased array antennas
  • Microwave communication networks
  • Automotive applications requiring high voltage and current handling capabilities
  • Gigabit Ethernet applications, such as industrial control and automation systems
  • Data center power distribution systems

Manufacturer

The NVBG060N090SC1 is manufactured by ON Semiconductor, a leading supplier of innovative semiconductor solutions.

Packages

The NVBG060N090SC1 comes in the D2PAK-8 package, designed for surface-mount technology and offering a compact and efficient solution for integrating the device into electronic circuits.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Part Life Cycle Code Active
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 67 Weeks Additional Feature ! AVALANCHE RATED
Avalanche Energy Rating (Eas) 162 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 900 V
Drain Current-Max (Abs) (ID) 44 A Drain Current-Max (ID) 44 A
Drain-source On Resistance-Max 0.084 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G7 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 7 Operating Mode ! ENHANCEMENT MODE
Operating Temperature-Max 175 °C Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 211 W
Pulsed Drain Current-Max (IDM) 176 A Reference Standard AEC-Q101
Surface Mount ! YES Terminal Finish Matte Tin (Sn) - annealed
Terminal Form ! GULL WING Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON Turn-off Time-Max (toff) 94 ns
Turn-on Time-Max (ton) 106 ns Manufacturer onsemi
Product Category ! MOSFET Technology SiC
Mounting Style SMD/SMT Package / Case D2PAK-7L
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 900 V Id - Continuous Drain Current 44 A
Rds On - Drain-Source Resistance 84 mOhms Vgs - Gate-Source Voltage - 8 V, + 22 V
Vgs th - Gate-Source Threshold Voltage 4.3 V Qg - Gate Charge 88 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature ! + 175 C
Pd - Power Dissipation 211 W Channel Mode Enhancement
Qualification AEC-Q101 Brand onsemi
Fall Time 11 ns Forward Transconductance - Min 16 S
Product Type ! MOSFET Rise Time ! 23 ns
Factory Pack Quantity 800 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 35 ns
Typical Turn-On Delay Time 24 ns Unit Weight 0.164906 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification NVBG060N090SC1 PDF Download

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