NVBG060N090SC1
N-Channel Metal-Oxide-Semiconductor Field-Effect TransistorNVBG060N090SC1
N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
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Manufacturer Part # : NVBG060N090SC1
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Package/Case: D2PAK-7
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Part Status : Active
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Brand: Onsemi
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Product Categories : Single FETs, MOSFETs
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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NVBG060N090SC1 DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
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1 | $20.401 | $20.40 |
30 | $19.498 | $584.94 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Interested Parts
NVBG060N090SC1 Description
The NVBG060N090SC1 is a high-performance Silicon Carbide MOSFET from ON Semiconductor, designed for automotive applications requiring high voltage and current handling capabilities. This device features low ON resistance, fast switching capability, and excellent thermal performance, making it suitable for harsh industrial environments.
Features
- 600V / 90A rating: Offers high voltage and current handling capabilities ideal for automotive applications.
- Silicon carbide material: Provides excellent thermal performance, fast switching capability, and low ON resistance.
- High temperature operation: Designed to operate efficiently within a wide temperature range.
- Low ON resistance: Enables efficient power conversion and minimizes power loss.
- Excellent thermal performance: Reduces the risk of overheating and ensures reliable device operation.
- High reliability: Manufactured with robust construction to ensure high MTBF (mean time between failures).
- RoHS compliant: Meets the requirements for reducing hazardous substances in electronic devices.
Application
The NVBG060N090SC1 is commonly used in various applications, including RF power amplification, transmitting and receiving systems, radar systems, microwave communication networks, satellite communication systems, phased array antennas, wireless infrastructure, and military applications.
Where to Use:
- Military applications
- Satellite communication systems
- Wireless infrastructure
- Radar systems
- Phased array antennas
- Microwave communication networks
- Automotive applications requiring high voltage and current handling capabilities
- Gigabit Ethernet applications, such as industrial control and automation systems
- Data center power distribution systems
Manufacturer
The NVBG060N090SC1 is manufactured by ON Semiconductor, a leading supplier of innovative semiconductor solutions.
Packages
The NVBG060N090SC1 comes in the D2PAK-8 package, designed for surface-mount technology and offering a compact and efficient solution for integrating the device into electronic circuits.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | Yes | Part Life Cycle Code | Active |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 67 Weeks | Additional Feature ! | AVALANCHE RATED |
Avalanche Energy Rating (Eas) | 162 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 900 V |
Drain Current-Max (Abs) (ID) | 44 A | Drain Current-Max (ID) | 44 A |
Drain-source On Resistance-Max | 0.084 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PSSO-G7 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 7 | Operating Mode ! | ENHANCEMENT MODE |
Operating Temperature-Max | 175 °C | Operating Temperature-Min | -55 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 245 |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 211 W |
Pulsed Drain Current-Max (IDM) | 176 A | Reference Standard | AEC-Q101 |
Surface Mount ! | YES | Terminal Finish | Matte Tin (Sn) - annealed |
Terminal Form ! | GULL WING | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Turn-off Time-Max (toff) | 94 ns |
Turn-on Time-Max (ton) | 106 ns | Manufacturer | onsemi |
Product Category ! | MOSFET | Technology | SiC |
Mounting Style | SMD/SMT | Package / Case | D2PAK-7L |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 900 V | Id - Continuous Drain Current | 44 A |
Rds On - Drain-Source Resistance | 84 mOhms | Vgs - Gate-Source Voltage | - 8 V, + 22 V |
Vgs th - Gate-Source Threshold Voltage | 4.3 V | Qg - Gate Charge | 88 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 175 C |
Pd - Power Dissipation | 211 W | Channel Mode | Enhancement |
Qualification | AEC-Q101 | Brand | onsemi |
Fall Time | 11 ns | Forward Transconductance - Min | 16 S |
Product Type ! | MOSFET | Rise Time ! | 23 ns |
Factory Pack Quantity | 800 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 35 ns |
Typical Turn-On Delay Time | 24 ns | Unit Weight | 0.164906 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
Prices listed do not include VAT.
Quantity | Unit Price |
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