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NVBG040N120SC1
Silicon Carbide (SiC) N-Channel Transistor designed for Automotive Use, featuring a voltage tolerance of 1
NVBG040N120SC1
Silicon Carbide (SiC) N-Channel Transistor designed for Automotive Use, featuring a voltage tolerance of 1
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Manufacturer Part # : NVBG040N120SC1
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Package/Case: D2PAK-7
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Part Status : Active
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Brand: Onsemi
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Product Categories : Single FETs, MOSFETs
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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NVBG040N120SC1 DataSheet
Pricing (USD)
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | $23.896 | $23.90 |
| 30 | $22.972 | $689.16 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
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NVBG040N120SC1 Description
The NVBG040N120SC1 is an N-Channel 1200V 60A (Tc) 357W (Tc) Surface Mount D2PAK-7 Power MOSFET from onsemi, designed for high-performance switching applications in industrial power supplies, motor drives, and renewable energy systems.
Pin Details
The NVBG040N120SC1 is a single N-channel power MOSFET with 7 pins for half-duplex communication. It includes pins for receiving, driving, and enabling signals, along with power supply and ground connections.
Pin configuration
- Pin 1 (Source): Source terminal
- Pin 2 (Gate): Gate input
- Pin 3 (Drain): Drain terminal
- Pin 4 (VCC): Positive power supply
- Pin 5 (GND): Ground
- Pin 6 (A): Non-inverting input/output
- Pin 7 (B): Inverting input/output
Features
- Qualified for Automotive According to AEC−Q101: Ensures durability in harsh conditions.
- 1200V rated: Provides high voltage handling capability.
- 60A (Tc) 357W (Tc): Offers high current and power handling capabilities.
- Surface Mount D2PAK-7 package: Enables compact and efficient design.
Applications
This Power MOSFET is suitable for use in industrial power supplies, motor drives, and renewable energy systems where high-performance switching is required.
Where to Use:
- Industrial power supplies
- Motor drives
- Renewable energy systems
- Battery-powered devices
- EMI-sensitive applications
Manufacturer
The NVBG040N120SC1 is manufactured by onsemi, a global leader in semiconductor technology.
Packages
The NVBG040N120SC1 comes in a Surface Mount D2PAK-7 package, designed for surface-mount technology and offering a compact and efficient solution for integrating the Power MOSFET into electronic circuits.
Equivalent Parts of NVBG040N120SC1
- NVBG040N120SC: A comparable Power MOSFET from onsemi with similar features and performance.
- STP16NF06L: An alternative Power MOSFET from STMicroelectronics that offers equivalent functionality.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Pbfree Code | Yes | Part Life Cycle Code | Active |
| ECCN Code | EAR99 | Factory Lead Time | 52 Weeks |
| Date Of Intro | 2020-02-21 | Avalanche Energy Rating (Eas) | 578 mJ |
| Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 1200 V | Drain Current-Max (Abs) (ID) | 60 A |
| Drain Current-Max (ID) | 60 A | Drain-source On Resistance-Max | 0.056 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-263CB |
| JESD-30 Code | R-PSSO-G7 | JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 7 | Operating Mode ! | ENHANCEMENT MODE |
| Operating Temperature-Max | 175 °C | Operating Temperature-Min | -55 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 245 |
| Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 357 W |
| Pulsed Drain Current-Max (IDM) | 240 A | Reference Standard | AEC-Q101 |
| Surface Mount ! | YES | Terminal Finish | MATTE TIN |
| Terminal Form ! | GULL WING | Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON CARBIDE | Turn-off Time-Max (toff) | 66 ns |
| Turn-on Time-Max (ton) | 66 ns | Manufacturer | onsemi |
| Product Category ! | MOSFET | RoHS | Details |
| Technology | SiC | Mounting Style | SMD/SMT |
| Package / Case | D2PAK-7L | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 1.2 kV |
| Id - Continuous Drain Current | 60 A | Rds On - Drain-Source Resistance | 56 mOhms |
| Vgs - Gate-Source Voltage | - 15 V, + 25 V | Vgs th - Gate-Source Threshold Voltage | 4.3 V |
| Qg - Gate Charge | 106 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature ! | + 175 C | Pd - Power Dissipation | 357 W |
| Channel Mode | Enhancement | Brand | onsemi |
| Fall Time | 9 ns | Forward Transconductance - Min | 20 S |
| Product Type ! | MOSFET | Rise Time ! | 20 ns |
| Factory Pack Quantity | 800 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 30 ns |
| Typical Turn-On Delay Time | 17 ns | Unit Weight | 0.164906 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
Prices listed do not include VAT.
| Quantity | Unit Price |
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