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NVBG020N120SC1
Silicon N-channel MOSFET, 1200V, 98A, TO-263
NVBG020N120SC1
Silicon N-channel MOSFET, 1200V, 98A, TO-263
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Manufacturer Part # : NVBG020N120SC1
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Package/Case: D2PAK-7
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Part Status : Active
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Brand: Onsemi
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Product Categories : Single FETs, MOSFETs
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
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NVBG020N120SC1 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
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NVBG020N120SC1 Description
The NVBG020N120SC1 is a high-performance power field-effect transistor from ON Semiconductor, designed for reliable operation in demanding applications. This device features advanced gate driver technology, excellent thermal stability, and compact design for easy installation, making it ideal for use in renewable energy systems, electric vehicle powertrains, industrial motor drives, uninterruptible power supplies, energy storage systems, grid-tied inverters, solar inverters, wind power converters, high-power motor control, and power factor correction systems.
Features
- Pulse Durability Tested: Ensures reliable operation in demanding applications.
- Advanced Gate Driver Technology: Provides high-performance switching and efficient energy conversion.
- Excellent Thermal Stability: Maintains stable performance across a wide temperature range.
- Compact Design for Easy Installation: Simplifies integration into electronic circuits.
- EMI/RFI Immune: Minimizes the impact of electromagnetic interference (EMI) and radio-frequency interference (RFI).
- Accurate Temperature Control: Enables precise temperature management for optimal performance.
- High-Power Switching: Supports high-power switching applications with low power loss.
Applications
The NVBG020N120SC1 is designed for use in a wide range of applications, including renewable energy systems, electric vehicle powertrains, industrial motor drives, uninterruptible power supplies, energy storage systems, grid-tied inverters, solar inverters, wind power converters, high-power motor control, and power factor correction systems.
Where to Use:
- Renewable energy systems
- Electric vehicle powertrains
- Industrial motor drives
- Uninterruptible power supplies
- Energy storage systems
- Grid-tied inverters
- Solar inverters
- Wind power converters
- High-power motor control
- Power factor correction systems
Manufacturer
The NVBG020N120SC1 is manufactured by ON Semiconductor, a global leader in semiconductor technology.
Packages
The NVBG020N120SC1 comes in a compact D2PAK-8 package, designed for surface-mount technology and offering a compact and efficient solution for integrating the transistor into electronic circuits.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Pbfree Code | Yes | Part Life Cycle Code | Active |
| ECCN Code | EAR99 | Factory Lead Time | 52 Weeks |
| Date Of Intro | 2020-06-24 | Avalanche Energy Rating (Eas) | 264 mJ |
| Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 1200 V | Drain Current-Max (Abs) (ID) | 98 A |
| Drain Current-Max (ID) | 98 A | Drain-source On Resistance-Max | 0.028 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 24 pF |
| JEDEC-95 Code | TO-263CB | JESD-30 Code | R-PSSO-G7 |
| JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
| Number of Elements | 1 | Number of Terminals | 7 |
| Operating Mode ! | ENHANCEMENT MODE | Operating Temperature-Max | 175 °C |
| Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 245 | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 468 W | Pulsed Drain Current-Max (IDM) | 392 A |
| Reference Standard | AEC-Q101 | Surface Mount ! | YES |
| Terminal Finish | MATTE TIN | Terminal Form ! | GULL WING |
| Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 85 ns | Turn-on Time-Max (ton) | 67 ns |
| Manufacturer | onsemi | Product Category ! | MOSFET |
| Technology | SiC | Mounting Style | SMD/SMT |
| Package / Case | D2PAK-7L | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 1.2 kV |
| Id - Continuous Drain Current | 98 A | Rds On - Drain-Source Resistance | 28 mOhms |
| Vgs - Gate-Source Voltage | - 15 V, + 25 V | Vgs th - Gate-Source Threshold Voltage | 4.3 V |
| Qg - Gate Charge | 220 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature ! | + 175 C | Pd - Power Dissipation | 468 W |
| Channel Mode | Enhancement | Qualification | AEC-Q101 |
| Brand | onsemi | Fall Time | 9 ns |
| Forward Transconductance - Min | 34 S | Product Type ! | MOSFET |
| Rise Time ! | 20 ns | Factory Pack Quantity | 800 |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 42 ns | Typical Turn-On Delay Time | 22 ns |
| Unit Weight | 0.164906 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
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