NVB190N65S3F

190 milliohms, 650 volts, 20 amps, N-channel D2PAK
4,795 Effective Inventory

NVB190N65S3F

Effective Inventory4,795

190 milliohms, 650 volts, 20 amps, N-channel D2PAK

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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

Shipping & Payment

About Shipping

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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NVB190N65S3F DataSheet
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NVB190N65S3F Description

The NVB190N65S3F is a Super Junction N-Channel MOSFET from ON Semiconductor, designed for high power industrial applications. This device features 650V breakdown voltage, 190A continuous drain current, low on-state resistance, and high speed switching, making it ideal for demanding power management systems.

Pin Details

The NVB190N65S3F is a TO-263 package MOSFET with 3 pins for half-duplex communication. It includes pins for receiving, driving, and enabling signals, along with power supply and ground connections.

Pin configuration

  • Pin 1 (Source): Source terminal
  • Pin 2 (Drain): Drain terminal
  • Pin 3 (Gate): Gate terminal

Features

  • Super Junction N-Channel MOSFET: Offers high power density and low on-state resistance for efficient switching.
  • 650V Breakdown Voltage: Provides reliable operation in demanding industrial applications.
  • 190A Continuous Drain Current: Enables high-power switching and control.
  • Low On-State Resistance: Reduces power losses and increases efficiency.
  • High Speed Switching: Supports fast switching times for reliable operation in demanding applications.

Applications

The NVB190N65S3F is suitable for high-power industrial applications, including motor control systems, power supplies, and welding equipment.

Where to Use:

  • Industrial automation systems
  • Motor control systems
  • Power supplies
  • Welding equipment

Manufacturer

The NVB190N65S3F is manufactured by ON Semiconductor, a global leader in semiconductor technology.

Packages

The NVB190N65S3F comes in a TO-263 package, designed for surface-mount technology and offering a compact and efficient solution for integrating the MOSFET into electronic circuits.

Equivalent Parts of NVB190N65S3F

  • NX64L60P: A comparable Super Junction N-Channel MOSFET from Nexperia with similar features and performance.

FAQ

Q: What is the maximum drain current of the NVB190N65S3F?
A: The maximum drain current is 190A, making it suitable for high-power switching applications.

Q: Can the NVB190N65S3F be used in motor control systems?
A: Yes, it is designed to operate reliably in demanding motor control systems and other high-power industrial applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Part Life Cycle Code Active
Reach Compliance Code compliant ECCN Code EAR99
Factory Lead Time 4 Weeks Avalanche Energy Rating (Eas) 220 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V Drain Current-Max (Abs) (ID) 20 A
Drain Current-Max (ID) 20 A Drain-source On Resistance-Max 0.19 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 2 Operating Mode ! ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 162 W
Pulsed Drain Current-Max (IDM) 50 A Reference Standard AEC-Q101
Surface Mount ! YES Terminal Finish MATTE TIN
Terminal Form ! GULL WING Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON Manufacturer onsemi
Product Category ! MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case D2PAK-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 20 A Rds On - Drain-Source Resistance 190 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 5 V
Qg - Gate Charge 34 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature ! + 150 C Pd - Power Dissipation 162 W
Channel Mode Enhancement Tradename SuperFET III
Series SuperFET3 Brand onsemi
Fall Time 3 ns Product Type ! MOSFET
Rise Time ! 13 ns Factory Pack Quantity 800
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 43 ns Typical Turn-On Delay Time 19 ns
Unit Weight 0.139332 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification NVB190N65S3F PDF Download

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