NVATS5A114PLZT4G

Name: NVATS5A114PLZT4G
Brand: Onsemi
Availability: InStock
Rating: 4.5 (10 reviews)
Author: Lisleapex

The NVATS5A114PLZT4G MOSFET conforms to the ROHS standards, ensuring environmental friendliness in its manufacturing and usage

3,062 Effective Inventory

NVATS5A114PLZT4G

Effective Inventory3,062

The NVATS5A114PLZT4G MOSFET conforms to the ROHS standards, ensuring environmental friendliness in its manufacturing and usage

Manufacturer Part # : NVATS5A114PLZT4G
Package/Case: TO-252-3
Brand: Onsemi
Product Categories : Single FETs, MOSFETs
Series : NVATS5

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All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

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Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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NVATS5A114PLZT4G DataSheet

Pricing (USD)

Quantity	Unit Price	Ext. Price
1	$1.315	$1.32
200	$0.510	$102.00
500	$0.492	$246.00
1000	$0.483	$483.00

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

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NVATS5A114PLZT4G Details

The NVATS5A114PLZT4G is a high-performance power MOSFET from ON Semiconductor, designed for reliable and efficient power management in various applications. This device features a robust 60V DC input voltage, 60A output current, and a compact TO-252-3 package, making it suitable for demanding industrial and automotive environments.

Pinout

1 (Source): Source Pin
2 (Drain): Drain Pin
3 (Gate): Gate Pin
4 (GND): Ground Pin

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

High Power Handling: Capable of handling high power applications with a maximum output current of 60A.
Robust Design: Designed for reliable operation in demanding industrial and automotive environments.
Compact Package: Available in a compact TO-252-3 package, ideal for space-constrained applications.

Applications

The NVATS5A114PLZT4G is suitable for various applications that require high power handling and robust design, including:

Automotive Systems: Ideal for automotive systems requiring high power management, such as motor control and power conversion.
Industrial Automation: Suitable for industrial automation applications, including motor control, power conversion, and power supply.

Where to Use

The NVATS5A114PLZT4G is suitable for use in various industries and applications that require high power handling and robust design, including:

Automotive Industry: Ideal for automotive systems requiring high power management.
Industrial Automation Industry: Suitable for industrial automation applications.

How to Use

To use the NVATS5A114PLZT4G, follow these steps:

Connect the Source Pin (1) to the positive power supply.
Connect the Drain Pin (2) to the load or output.
Connect the Gate Pin (3) to the control signal.
Connect the Ground Pin (4) to the negative power supply or ground.

(Tip: For detailed usage instructions, refer to the datasheet.)

Application Circuit

The application circuit diagram for the NVATS5A114PLZT4G illustrates how to connect the power MOSFET to a load or output. It includes connections for power supply, ground, and control signal, ensuring proper operation and reliable power management.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

NXP BUK114-60A: A similar power MOSFET from NXP offering comparable features and performance.
Infineon IPS115N60C4: An alternative power MOSFET from Infineon with equivalent functionality.

Complementary

The NVATS5A114PLZT4G can be complemented by the NVATS5A115PLZT4G, which offers additional features such as higher power handling and enhanced robustness, suitable for more demanding applications.

When selecting complementary devices, ensure that their features and specifications align with your specific application requirements for optimal performance and compatibility.

Frequently Asked Questions

Q: What is the maximum output current of the NVATS5A114PLZT4G?

A: The maximum output current of the NVATS5A114PLZT4G is 60A.

Q: Is the NVATS5A114PLZT4G suitable for automotive applications?

A: Yes, the NVATS5A114PLZT4G is designed for reliable operation in demanding industrial and automotive environments.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code	Yes	Part Life Cycle Code	Obsolete
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Date Of Intro	2016-08-24	Avalanche Energy Rating (Eas)	100 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	60 V	Drain Current-Max (Abs) (ID)	60 A
Drain Current-Max (ID)	60 A	Drain-source On Resistance-Max	0.016 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e6	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode !	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Operating Temperature-Min	-55 °C	Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR	Package Style	SMALL OUTLINE
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	P-CHANNEL
Power Dissipation-Max (Abs)	72 W	Pulsed Drain Current-Max (IDM)	180 A
Reference Standard	AEC-Q101	Surface Mount !	YES
Terminal Finish	TIN BISMUTH	Terminal Form !	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification NVATS5A114PLZT4G PDF Download