NTJD4152PT1G
Trans MOSFET P-CH 20V 0.88A 6-Pin SC-88 T/RNTJD4152PT1G
Trans MOSFET P-CH 20V 0.88A 6-Pin SC-88 T/R
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Manufacturer Part # : NTJD4152PT1G
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Package/Case: SC88-6
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Part Status : ACTIVE
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Brand: Onsemi
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Product Categories : FET, MOSFET Arrays
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Series : NTJD4152
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RoHS:
Quality Assurance
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About After Sales Service
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Initiate the application within 90 days from the shipment date.
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NTJD4152PT1G DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
---|---|---|
5 | $0.085 | $0.42 |
50 | $0.074 | $3.70 |
150 | $0.069 | $10.35 |
500 | $0.065 | $32.50 |
3000 | $0.056 | $168.00 |
6000 | $0.054 | $324.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Interested Parts
NTJD4152PT1G Details
The NTJD4152PT1G is a high-performance N-channel MOSFET from ON Semiconductor, designed for efficient power switching applications. This MOSFET features low on-resistance and fast switching speeds, making it suitable for use in power management and DC-DC converter circuits. It is housed in a compact and thermally efficient package, allowing for high power density designs.
Pinout
- 1 (G): Gate
- 2 (D): Drain
- 3 (S): Source
(Tip: For detailed pinout information, please refer to the corresponding datasheet.)
Key Features
- Low On-Resistance: Provides efficient power switching with minimal voltage drop.
- High Switching Speeds: Capable of fast switching for improved power management.
- Compact Package: Housed in a space-saving and thermally efficient package for high power density designs.
- Enhanced Efficiency: Designed to optimize power conversion and minimize power losses.
Application
- Power Management: Ideal for power switching and management applications in various electronic systems.
- DC-DC Converters: Used in DC-DC converter circuits for efficient voltage conversion.
- Battery Management: Suitable for battery management systems requiring efficient power control.
Where to Use
The NTJD4152PT1G is suitable for applications that demand efficient power switching and management. It is commonly used in power supplies, voltage regulators, and DC-DC converter modules for improved power efficiency.
How to Use
Integrate the NTJD4152PT1G into your circuit by connecting the gate, drain, and source pins to the corresponding circuit nodes. Ensure proper heat dissipation for reliable operation, especially during high-power applications. Refer to the datasheet for detailed usage guidelines and thermal considerations.
Application Circuit
The application circuit diagram for the NTJD4152PT1G illustrates the connections and usage of the MOSFET in a typical power switching or DC-DC converter circuit. It includes connections for the gate, drain, and source, ensuring proper power flow and control.
(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)
Equivalents
- BSC010N04LS: A similar N-channel MOSFET with comparable performance and characteristics.
- FDD6637: An alternative MOSFET offering similar power switching capabilities.
Complementary
The NTJD4152PT1G can be complemented by the NTJD4105CT1G, which offers enhanced voltage blocking capabilities and complementary switching characteristics, suitable for specific power management requirements.
When selecting complementary MOSFETs, ensure they align with your specific application needs for optimal power efficiency and compatibility.
Frequently Asked Questions
Q: What is the maximum operating voltage supported by the NTJD4152PT1G?
A: The NTJD4152PT1G is capable of handling operating voltages up to [insert maximum voltage]. For specific voltage ratings, refer to the datasheet for detailed specifications and limitations.
Q: Can the NTJD4152PT1G be used in high-frequency switching applications?
A: Yes, the NTJD4152PT1G is designed to support high-frequency switching, providing efficient power control in such applications. However, ensure that the operating conditions and thermal considerations are within the specified limits for reliable performance.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Status | Active | Compliance | PbAHP |
Package Type | SC-88-6 / SC-70-6 / SOT-363-6 | Case Outline | 419B-02 |
MSL Type | 1 | MSL Temp (°C) | 260 |
Container Type | REEL | Container Qty. | 3000 |
ON Target | Y | Channel Polarity | P-Channel |
Configuration | Dual | V(BR)DSS Min (V) | -20 |
VGS Max (V) | 12 | ID Max (A) | 0.88 |
PD Max (W) | 0.272 | RDS(on) Max @ VGS = 2.5 V (mΩ) | Q1=Q2=345 |
RDS(on) Max @ VGS = 4.5 V (mΩ) | Q1=Q2=215 | Qg Typ @ VGS = 4.5 V (nC) | 1.3 |
Qg Typ @ VGS = 10 V (nC) | 2.2 | Ciss Typ (pF) | 155 |
Pricing ($/Unit) | $0.1121Sample |
FAQs
What is NTJD4152PT1G?
The NTJD4152PT1G is a Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by ON Semiconductor. It is ideal for power management applications that require high efficiency and switching speeds, such as power supplies, motor control, and battery management systems.
How Does NTJD4152PT1G Work?
The NTJD4152PT1G works as a power switch by controlling the flow of current between the source and drain terminals based on the voltage applied to the gate terminal. It offers low on-resistance and high current-handling capabilities, making it suitable for high-power applications. The MOSFET's fast switching speeds contribute to efficient power management and switching operations.
How Many Pins does NTJD4152PT1G have and What are the Functions of the Pinout Configuration?
The NTJD4152PT1G is housed in a 3-pin SOT-223 package. The pinout configuration includes:
- GATE: Gate terminal for controlling the MOSFET.
- SOURCE: Source terminal connected to the ground or common reference point.
- DRAIN: Drain terminal through which the current flows when the MOSFET is switched on.
What are the Pros and Cons of NTJD4152PT1G?
Pros:
- High Efficiency: Offers low on-resistance for reduced power losses.
- High Current Handling: Capable of handling high currents for power applications.
- Fast Switching Speeds: Enables efficient power management and switching operations.
- Compact Package: The SOT-223 package is space-efficient and suitable for small designs.
Cons:
- Gate Drive Voltage: Requires proper gate drive voltage for optimal performance.
- Heat Dissipation: May require heat sinking in high-power applications to manage temperature rise.
Are There Any Equivalents/Alternatives to NTJD4152PT1G for Recommendation?
- Equivalents to the NTJD4152PT1G include the FDD6637 from Fairchild Semiconductor and the SIHP5N60E from Vishay.
- Alternatives to the NTJD4152PT1G include the IRF9310 from Infineon and the NDP6020P from ON Semiconductor.
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Price details
Prices listed do not include VAT.
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