NTJD1155LT1G
P-Channel MOSFET with Level Shift, capable of handling 8V and +/-1.3ANTJD1155LT1G
P-Channel MOSFET with Level Shift, capable of handling 8V and +/-1.3A
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Manufacturer Part # : NTJD1155LT1G
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Package/Case: SC-88-6
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Part Status : Active
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Brand: Onsemi
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Product Categories : FET, MOSFET Arrays
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Series : NTJD1155
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RoHS:
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Initiate the application within 90 days from the shipment date.
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NTJD1155LT1G DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
---|---|---|
500 | $0.153 | $76.50 |
5 | $0.237 | $1.18 |
50 | $0.192 | $9.60 |
150 | $0.170 | $25.50 |
3000 | $0.139 | $417.00 |
6000 | $0.132 | $792.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Interested Parts
NTJD1155LT1G Details
The NTJD1155LT1G is a dual N/P-channel MOSFET transistor from ON Semiconductor, designed for efficient power management in various applications. This device features low RDS(on) and high current handling capabilities, making it suitable for load switch and level shift applications.
Pinout
- 1 (VCC): Positive Power Supply
- 2 (GND): Ground
- 3 (IN): Input Signal
- 4 (OUT): Output Signal
- 5 (EN): Enable Pin
Key Features
- Low RDS(on): Reduces power consumption and heat generation
- High Current Handling: Handles high currents up to 5A
- Dual N/P-Channel MOSFETs: Provides flexibility in circuit design
- Level Shift Capability: Enables efficient power management in various applications
Applications
- Load Switch Applications: Suitable for load switch and level shift applications
- Power Management Systems: Used in power management systems requiring efficient current handling
- Automotive Systems: Ideal for automotive systems where high current handling and low RDS(on) are critical
Where to Use
The NTJD1155LT1G is suitable for applications that require efficient power management, such as load switch and level shift applications. It is ideal for systems where high current handling and low RDS(on) are critical.
How to Use
Connect the NTJD1155LT1G to your circuit by wiring the VCC, GND, IN, OUT, and EN pins according to your specific application requirements. Ensure proper power supply connections to VCC and GND. Use the enable pin (EN) to control the device's operation.
Application Circuit
The application circuit diagram for the NTJD1155LT1G illustrates how to connect the transistor to a load switch or level shift application. It includes connections for power supply, ground, input signal, output signal, and enable pin, ensuring proper operation and efficient power management.
(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)
Equivalents
- NTJD1155LT1H: A similar dual N/P-channel MOSFET transistor from ON Semiconductor with comparable features and performance.
- STP16NF06L: An alternative dual N-channel power MOSFET from STMicroelectronics with equivalent functionality.
Complementary
The NTJD1155LT1G can be complemented by the NTJD1155LT2H, which offers additional features such as higher current handling and enhanced level shift capability, suitable for more demanding power management applications.
When selecting complementary transistors, ensure that their features and specifications align with your specific application requirements for optimal performance and compatibility.
Frequently Asked Questions
Q: What is the maximum current handling capability of the NTJD1155LT1G?
A: The NTJD1155LT1G can handle currents up to 5A. For more details, refer to the datasheet for specific operating conditions and limitations.
Q: Can the NTJD1155LT1G be used in automotive systems?
A: Yes, the NTJD1155LT1G is suitable for automotive systems where high current handling and low RDS(on) are critical. It is ideal for applications such as load switch and level shift applications.

Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Status | Active | Compliance | PbAHP |
Package Type | SC-88-6 / SC-70-6 / SOT-363-6 | Case Outline | 419B-02 |
MSL Type | 1 | MSL Temp (°C) | 260 |
Container Type | REEL | Container Qty. | 3000 |
ON Target | Y | Channel Polarity | P-Channel |
Configuration | Level Shift | V(BR)DSS Min (V) | -8 |
VGS Max (V) | 8 | VGS(th) Max (V) | 1 |
ID Max (A) | 1.3 | PD Max (W) | 0.4 |
RDS(on) Max @ VGS = 2.5 V (mΩ) | 170 | RDS(on) Max @ VGS = 4.5 V (mΩ) | 130 |
Qg Typ @ VGS = 4.5 V (nC) | 1.3 | Pricing ($/Unit) | $0.1431Sample |
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Price details
Prices listed do not include VAT.
Quantity | Unit Price |
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