NTJD1155LT1G

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P-Channel MOSFET with Level Shift, capable of handling 8V and +/-1.3A

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NTJD1155LT1G DataSheet

Pricing (USD)

Quantity Unit Price Ext. Price
500 $0.153 $76.50
5 $0.237 $1.18
50 $0.192 $9.60
150 $0.170 $25.50
3000 $0.139 $417.00
6000 $0.132 $792.00

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

Interested Parts

Rapid Quote

Please submit RFQ for NTJD1155LT1G or email to us: Email: [email protected], we will contact you in 12 hours.

NTJD1155LT1G Details

The NTJD1155LT1G is a dual N/P-channel MOSFET transistor from ON Semiconductor, designed for efficient power management in various applications. This device features low RDS(on) and high current handling capabilities, making it suitable for load switch and level shift applications.

Pinout

  • 1 (VCC): Positive Power Supply
  • 2 (GND): Ground
  • 3 (IN): Input Signal
  • 4 (OUT): Output Signal
  • 5 (EN): Enable Pin

Key Features

  • Low RDS(on): Reduces power consumption and heat generation
  • High Current Handling: Handles high currents up to 5A
  • Dual N/P-Channel MOSFETs: Provides flexibility in circuit design
  • Level Shift Capability: Enables efficient power management in various applications

Applications

  • Load Switch Applications: Suitable for load switch and level shift applications
  • Power Management Systems: Used in power management systems requiring efficient current handling
  • Automotive Systems: Ideal for automotive systems where high current handling and low RDS(on) are critical

Where to Use

The NTJD1155LT1G is suitable for applications that require efficient power management, such as load switch and level shift applications. It is ideal for systems where high current handling and low RDS(on) are critical.

How to Use

Connect the NTJD1155LT1G to your circuit by wiring the VCC, GND, IN, OUT, and EN pins according to your specific application requirements. Ensure proper power supply connections to VCC and GND. Use the enable pin (EN) to control the device's operation.

Application Circuit

The application circuit diagram for the NTJD1155LT1G illustrates how to connect the transistor to a load switch or level shift application. It includes connections for power supply, ground, input signal, output signal, and enable pin, ensuring proper operation and efficient power management.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

  • NTJD1155LT1H: A similar dual N/P-channel MOSFET transistor from ON Semiconductor with comparable features and performance.
  • STP16NF06L: An alternative dual N-channel power MOSFET from STMicroelectronics with equivalent functionality.

Complementary

The NTJD1155LT1G can be complemented by the NTJD1155LT2H, which offers additional features such as higher current handling and enhanced level shift capability, suitable for more demanding power management applications.

When selecting complementary transistors, ensure that their features and specifications align with your specific application requirements for optimal performance and compatibility.

Frequently Asked Questions

Q: What is the maximum current handling capability of the NTJD1155LT1G?

A: The NTJD1155LT1G can handle currents up to 5A. For more details, refer to the datasheet for specific operating conditions and limitations.

Q: Can the NTJD1155LT1G be used in automotive systems?

A: Yes, the NTJD1155LT1G is suitable for automotive systems where high current handling and low RDS(on) are critical. It is ideal for applications such as load switch and level shift applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SC-88-6 / SC-70-6 / SOT-363-6 Case Outline 419B-02
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 3000
ON Target Y Channel Polarity P-Channel
Configuration Level Shift V(BR)DSS Min (V) -8
VGS Max (V) 8 VGS(th) Max (V) 1
ID Max (A) 1.3 PD Max (W) 0.4
RDS(on) Max @ VGS = 2.5 V (mΩ) 170 RDS(on) Max @ VGS = 4.5 V (mΩ) 130
Qg Typ @ VGS = 4.5 V (nC) 1.3 Pricing ($/Unit) $0.1431Sample

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