NTF3055-100T1G

Name: NTF3055-100T1G
Brand: Onsemi
Rating: 4.5 (10 reviews)
Author: Lisleapex

MOSFET 60V 3A N-Channel

8,432 Effective Inventory

NTF3055-100T1G

Effective Inventory8,432

MOSFET 60V 3A N-Channel

Manufacturer Part # : NTF3055-100T1G
Package/Case: SOT223-4
Part Status : obsolete
Brand: Onsemi
Product Categories : Single FETs, MOSFETs
Series : NTF3055

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NTF3055-100T1G DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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NTF3055-100T1G Details

The NTF3055-100T1G is a powerful N-channel MOSFET from ON Semiconductor, designed for high-efficiency switching applications. This device is capable of handling a high drain current of up to 55A, with a maximum drain-source voltage of 100V. With its low on-resistance and fast switching characteristics, it is ideal for use in power management, DC-DC converters, and motor control applications.

Pinout

1 (G): Gate
2 (D): Drain
3 (S): Source

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

High Drain Current: Supports a maximum continuous drain current of 55A.
Low On-Resistance: Offers low RDS(ON) to minimize conduction losses.
Fast Switching Speed: Optimized for rapid switching applications.
High Voltage Rating: Rated for a maximum of 100V for versatile applications.
Thermal Stability: Designed for reliable performance under varying thermal conditions.

Application

Power Management: Ideal for switching regulators and power supplies.
DC-DC Converters: Suitable for use in buck and boost converter applications.
Motor Control: Used in motor drive circuits for efficient control of motors.

Where to Use

The NTF3055-100T1G is suitable for high-performance electronics that require efficient power switching. It is commonly used in power supplies, motor control applications, and other systems requiring fast and reliable switching of high currents.

How to Use

Integrate the NTF3055-100T1G into your circuit by connecting the gate, drain, and source pins according to your application requirements. Ensure adequate gate drive to switch the MOSFET efficiently and monitor thermal performance for safe operation. For detailed usage instructions, refer to the datasheet.

Application Circuit

The application circuit diagram for the NTF3055-100T1G illustrates its connection in a typical power management setup. It includes gate driver circuitry, the load connection, and output configuration, ensuring optimal performance and reliability in your applications.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

IRF3205: A comparable N-channel MOSFET offering similar performance characteristics.
FQP30N10: An alternative that provides equivalent functionality with slightly different specifications.

Complementary

The NTF3055-100T1G can be complemented by the NTF200N100T1G, which offers a lower current rating while maintaining similar switching characteristics and voltage ratings for efficient operation.

When selecting complementary MOSFETs, ensure their ratings match the requirements of your specific application for optimal performance.

Frequently Asked Questions

Q: What is the maximum drain current for the NTF3055-100T1G?

A: The NTF3055-100T1G can handle a maximum continuous drain current of 55A. For more details, refer to the datasheet for specific operating conditions.

Q: Can the NTF3055-100T1G be used in high-frequency applications?

A: Yes, the NTF3055-100T1G is designed for fast switching applications, making it suitable for high-frequency operations.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status	Active	CAD Models
Compliance	PbAHP	Package Type	SOT-223-4 / TO-261-4D
Case Outline	0.0318	MSL Type	1
MSL Temp (°C)	260	Container Type	REEL
Container Qty.	1000	ON Target	N
Channel Polarity	N-Channel	Configuration	Single
V(BR)DSS Min (V)	60	VGS Max (V)	20
VGS(th) Max (V)	4	ID Max (A)	3
PD Max (W)	2.1	RDS(on) Max @ VGS = 10 V (mΩ)	110
Qg Typ @ VGS = 10 V (nC)	11	Ciss Typ (pF)	324
Pricing ($/Unit)	$0.3569

FAQs

What is NTF3055-100T1G?

The NTF3055-100T1G is an N-channel power MOSFET designed by ON Semiconductor. It is commonly used for power management and switching applications in various electronic devices, including power supplies, motor control, and lighting systems.

How Does NTF3055-100T1G Work?

The NTF3055-100T1G operates as a voltage-controlled switch, allowing or blocking the flow of current between its source and drain terminals. When a sufficient voltage is applied to the gate terminal, the MOSFET turns on and conducts current, and when the gate voltage is removed, the MOSFET turns off, effectively controlling the power flow through the device.

How Many Pins does NTF3055-100T1G have and What are the Functions of the Pinout Configuration?

The NTF3055-100T1G is housed in a standard SOT-223 package, typically with 4 pins. The pinout configuration includes:

GATE: The gate terminal, which controls the conduction of the MOSFET.
SOURCE: The source terminal, from which the current flows into the MOSFET.
DRAIN: The drain terminal, where the current exits the MOSFET.
DEVICE BODY: The tab or body of the MOSFET, usually connected to the source terminal and used for heat dissipation.

What are the Pros and Cons of NTF3055-100T1G?

Pros:

High Power Capability: Capable of handling relatively high levels of power and current.
Compact Package: The SOT-223 package provides a good balance of thermal performance and board space efficiency.
Low On-Resistance: Contributes to minimal power dissipation and high efficiency.
Fast Switching Speed: Allows for rapid switching, suitable for PWM (Pulse Width Modulation) applications.

Cons:

Gate-Drive Voltage: Requires a specific gate-drive voltage for efficient switching, which may need additional driver circuitry.
Heat Dissipation: While the tab helps with heat dissipation, thermal management may be necessary for high-power applications.
Miller Effect: The gate-drain capacitance can lead to parasitic oscillations in certain circuit configurations.