NTBG060N090SC1

Effective Inventory3,999

D2PAK-7L packaged Silicon Carbide MOSFET with 60 milliohm resistance and 900 volt rating

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NTBG060N090SC1 DataSheet

Pricing (USD)

Quantity Unit Price Ext. Price
1 $11.181 $11.18
10 $10.728 $107.28
30 $9.943 $298.29
100 $9.258 $925.80

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

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Please submit RFQ for NTBG060N090SC1 or email to us: Email: [email protected], we will contact you in 12 hours.

NTBG060N090SC1 Description

The NTBG060N090SC1 is a Silicon Carbide MOSFET from ON Semiconductor, designed for high-speed switching and low capacitance applications. This device features a typical RDSon of 60mohm and operates at a voltage level of 900V. It comes in a D2PAK-8 package, making it suitable for compact circuit designs.

Features

  • Typical RDSon: Offers a low on-resistance of 60mohm for efficient switching applications.
  • High Speed Switching and Low Capacitance: Designed for high-speed switching and low capacitance, making it suitable for demanding applications.
  • 100% UIL Tested: Ensures reliable performance through rigorous testing procedures.
  • Devices are RoHS Compliant: Meets the environmental requirements of the Restriction of Hazardous Substances (RoHS) directive.

Applications

The NTBG060N090SC1 is commonly used in DC-DC converter and boost inverter applications where high-speed switching and low capacitance are essential.

Where to Use:

  • DC-DC converters
  • Boost inverters

Manufacturer

The NTBG060N090SC1 is manufactured by ON Semiconductor, a global leader in semiconductor technology.

Packages

The NTBG060N090SC1 comes in a D2PAK-8 package, making it suitable for compact circuit designs.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Part Life Cycle Code Active
Reach Compliance Code compliant ECCN Code EAR99
Factory Lead Time 16 Weeks Avalanche Energy Rating (Eas) 162 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 900 V Drain Current-Max (Abs) (ID) 44 A
Drain Current-Max (ID) 44 A Drain-source On Resistance-Max 0.084 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR Feedback Cap-Max (Crss) 12 pF
JEDEC-95 Code TO-263CB JESD-30 Code R-PSSO-G7
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 7
Operating Mode ! ENHANCEMENT MODE Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 211 W Pulsed Drain Current-Max (IDM) 176 A
Surface Mount ! YES Terminal Finish MATTE TIN
Terminal Form ! GULL WING Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE Turn-off Time-Max (toff) 94 ns
Turn-on Time-Max (ton) 106 ns

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification NTBG060N090SC1 PDF Download

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