NTB082N65S3F
Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 40 A, 82 mΩ, D2PAK, 800-REELNTB082N65S3F
Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 40 A, 82 mΩ, D2PAK, 800-REEL
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Manufacturer Part # : NTB082N65S3F
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Package/Case: TO-263-3
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Part Status : NRND
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Brand: Onsemi
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Product Categories : Single FETs, MOSFETs
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.






Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.








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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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NTB082N65S3F DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
---|---|---|
1 | $5.188 | $5.19 |
10 | $4.558 | $45.58 |
30 | $4.174 | $125.22 |
100 | $3.574 | $357.40 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Interested Parts
NTB082N65S3F Description
The NTB082N65S3F is a Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 40 A, 82 mΩ, D2PAK from onsemi, designed for reliable power management in various applications. This device features high-speed switching performance, low power consumption enabled, fast recovery time achieved, safe operating area expanded, precise temperature control, and reliable operation guaranteed.
Features
- High-Speed Switching Performance: Offers fast switching performance for efficient power management.
- Low Power Consumption Enabled: Optimized for low power usage, ideal for battery-powered devices or energy-efficient systems.
- Fast Recovery Time Achieved: Provides quick recovery time to minimize downtime and ensure reliable operation.
- Safe Operating Area Expanded: Ensures safe operating conditions with an expanded safe operating area.
- Precise Temperature Control: Allows for precise temperature control to optimize performance and reliability.
- Reliable Operation Guaranteed: Ensures reliable operation in various applications, including industrial communication networks, cloud systems, and industrial automation.
Applications
The NTB082N65S3F is commonly used in telecommunication, cloud system, and industrial applications where high-speed switching performance, low power consumption, and reliable operation are essential.
Where to Use:
- Telecommunication
- Cloud system
- Industrial automation
Manufacturer
The NTB082N65S3F is manufactured by onsemi, a global leader in semiconductor technology. It falls under the category of Power MOSFETs, which are designed to facilitate reliable power management in various applications.
This product was developed to meet the growing demand for efficient and reliable power management in industrial, telecommunication, and cloud system applications, where features like high-speed switching performance, low power consumption, and precise temperature control are essential.
Packages
The NTB082N65S3F comes in a D2PAK package. This package is designed for surface-mount technology, offering a compact and efficient solution for integrating the Power MOSFET into electronic circuits.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | Yes | Part Life Cycle Code | Not Recommended |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 77 Weeks | Avalanche Energy Rating (Eas) | 510 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 650 V | Drain Current-Max (Abs) (ID) | 40 A |
Drain Current-Max (ID) | 40 A | Drain-source On Resistance-Max | 0.082 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-263AB |
JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 2 | Operating Mode ! | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Operating Temperature-Min | -55 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 245 |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 313 W |
Pulsed Drain Current-Max (IDM) | 100 A | Surface Mount ! | YES |
Terminal Finish | Matte Tin (Sn) - annealed | Terminal Form ! | GULL WING |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Manufacturer | onsemi | Product Category ! | MOSFET |
RoHS | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | D2PAK-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 650 V | Id - Continuous Drain Current | 40 A |
Rds On - Drain-Source Resistance | 82 mOhms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage | 3 V | Qg - Gate Charge | 81 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 150 C |
Pd - Power Dissipation | 313 W | Channel Mode | Enhancement |
Series | SuperFET3 | Brand | onsemi |
Fall Time | 5 ns | Product Type ! | MOSFET |
Rise Time ! | 27 ns | Factory Pack Quantity | 800 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel SuperFET III MOSFET |
Typical Turn-Off Delay Time | 79 ns | Typical Turn-On Delay Time | 27 ns |
Unit Weight | 0.052385 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
Prices listed do not include VAT.
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