NCP5106BDR2G

Effective Inventory9,301

Low side and high side drivers integrated into a SOIC-8-150mil package

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NCP5106BDR2G DataSheet

Pricing (USD)

Quantity Unit Price Ext. Price
1 $0.531 $0.53
10 $0.439 $4.39
30 $0.395 $11.85
100 $0.349 $34.90
500 $0.322 $161.00
1000 $0.307 $307.00

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

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Please submit RFQ for NCP5106BDR2G or email to us: Email: [email protected], we will contact you in 12 hours.

NCP5106BDR2G Details

The NCP5106BDR2G is a high-speed, dual gate driver IC from ON Semiconductor, designed for driving N-channel MOSFETs in half-bridge configurations. It provides strong output drive capabilities with an adjustable output voltage. This device is ideal for applications requiring high efficiency and fast switching, such as power converters and motor drivers.

Pinout

  • 1 (VDD): Supply Voltage
  • 2 (HO): High-side Output
  • 3 (VS): High-side Source Voltage
  • 4 (LO): Low-side Output
  • 5 (GND): Ground
  • 6 (IN): Input Control Signal
  • 7 (CS): Current Sense Input
  • 8 (NC): No Connection

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

  • Low Rise and Fall Times: Provides fast switching performance for high-speed applications.
  • Dual Output Drivers: Capable of driving both high-side and low-side MOSFETs.
  • Wide Supply Voltage Range: Operates over a broad supply voltage range for flexible design.
  • Integrated Bootstrapping: Simplifies drive circuitry by integrating bootstrap functionality.
  • Robust Thermal Performance: Designed to operate efficiently in high-temperature environments.

Application

  • Power Converters: Suitable for DC-DC converter applications to drive MOSFETs efficiently.
  • Motor Drivers: Ideal for driving motors in robotics and industrial applications.
  • Class-D Amplifiers: Used in audio amplifiers for high-efficiency switching.

Where to Use

The NCP5106BDR2G is suitable for applications requiring precise control of MOSFETs, particularly in power management and motor control circuits. Its fast switching capabilities make it ideal for modern high-efficiency power designs.

How to Use

Connect the NCP5106BDR2G by wiring the VDD and GND pins to the appropriate power supply and ground. Use the IN pin to apply the control signal for the driver outputs. The HO and LO pins drive the MOSFET gates. Ensure proper bootstrap configuration for the high-side driver. For detailed usage instructions, refer to the datasheet.

Application Circuit

The application circuit diagram for the NCP5106BDR2G illustrates the connections for powering the device, controlling the gates of the MOSFETs, and integrating with other components. This ensures optimal performance in various applications.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

  • IR2104: A similar dual gate driver from International Rectifier with comparable features.
  • MIC4427: An alternative MOSFET driver with similar performance characteristics.

Complementary

The NCP5106BDR2G can be complemented by the NCP5105BDR2G, which provides single-channel driving capabilities for applications that require less complexity while maintaining high performance.

When selecting complementary drivers, ensure compatibility with your circuit requirements and switching characteristics for best performance.

Frequently Asked Questions

Q: What is the maximum supply voltage for the NCP5106BDR2G?

A: The NCP5106BDR2G can operate within a supply voltage range of 10V to 20V. Refer to the datasheet for detailed specifications and limits.

Q: Is the NCP5106BDR2G suitable for high-frequency applications?

A: Yes, the NCP5106BDR2G is designed for high-speed switching applications, making it suitable for high-frequency power management solutions.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SOIC-8 Case Outline 751-07
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 2500
ON Target Y Power Switch MOSFET / IGBT
Number of Outputs 2 Topology High-Low
Isolation Type Junction Isolation Vin Max (V) 600
VCC Max (V) 23 Rise Time (ns) 85
Fall Time (ns) 35 Drive Source Current Typ (A) 0.25
Drive Sink Current Typ (A) 0.5 Turn On Prop. Delay Typ (ns) 100
Turn Off Prop. Delay Typ (ns) 100 Delay Matching 35
Pricing ($/Unit) $0.4574Sample

FAQs

What is NCP5106BDR2G?

The NCP5106BDR2G is a high-performance MOSFET gate driver IC designed by ON Semiconductor. It is specifically tailored for driving high-power MOSFETs in applications such as power supplies, motor control, and inverters.

How Does NCP5106BDR2G Work?

The NCP5106BDR2G operates by providing the necessary voltage and current to rapidly switch the gate of an external power MOSFET. By controlling the timing and level of the gate voltage, it enables efficient and precise control of the power MOSFET, allowing for high-speed switching and optimal power conversion.

How Many Pins does NCP5106BDR2G have and What are the Functions of the Pinout Configuration?

The NCP5106BDR2G is housed in an 8-pin SOIC (Small Outline Integrated Circuit) package. The pinout configuration includes:

  • COMP: Compensation pin for stability optimization.
  • SD: Shutdown pin for device enable/disable control.
  • VCC: Power supply pin for the IC.
  • BST: Bootstrap pin for driving the high-side power MOSFET.
  • OUT: Output pin to drive the gate of the power MOSFET.
  • GND: Ground pin for the IC.

What are the Pros and Cons of NCP5106BDR2G?

Pros:

  • High Performance: Designed for high-power MOSFET driving applications.
  • Efficient Power Conversion: Enables high-speed switching for optimal power efficiency.
  • Compact Package: Housed in a small and convenient SOIC package.
  • Shutdown Feature: Includes a shutdown pin for easy device control.
  • Bootstrap Function: Supports bootstrap driving for high-side MOSFETs.

Cons:

  • External Components: May require external components for specific applications.
  • Complexity: Requires understanding of gate driver circuits for proper implementation.

Are There Any Equivalents/Alternatives to NCP5106BDR2G for Recommendation?

  • The IR2104 from Infineon is a comparable high-performance MOSFET driver IC.
  • Alternatives to the NCP5106BDR2G include the IRS2104 from International Rectifier and the MCP1407 from Microchip Technology.

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