NAND512W3A2SN6E

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High-speed Parallel Interface

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Service & Packaging

Service & Packaging

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NAND512W3A2SN6E DataSheet

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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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Please submit RFQ for NAND512W3A2SN6E or email to us: Email: [email protected], we will contact you in 12 hours.

Details

Boasting an impressive storage capacity of 512 gigabits (Gb), equivalent to 64 gigabytes (GB), the NAND512W3A2SN6E represents a state-of-the-art NAND flash memory chip tailored to the evolving storage demands of modern electronic devices. By leveraging a 3-bit per cell (TLC) architecture indicated by the "W3" in its name, this chip achieves exceptional storage density, meeting the requirements of high-density storage applications. While this architecture may entail a trade-off in performance and endurance when compared to lower bit-per-cell designs, the NAND512W3A2SN6E remains a popular choice for applications necessitating high-density storage with satisfactory performance. Additionally, the "A2" denotes the second generation or a specific revision of this product line, underscoring its continuous improvement and development. Furthermore, the "SN6E" signifies the package type and form factor, which may vary depending on the manufacturer's specifications. Widely implemented in smartphones, tablets, solid-state drives (SSDs), and various other consumer electronics, the NAND512W3A2SN6E is a versatile and dependable storage solution. For detailed specifications concerning its performance, power consumption, and interface protocols, it is advisable to refer to the manufacturer's datasheet

Key Features

  • This is a 16Gb DDR4 SDRAM chip
  • It features a 1.2V operating voltage and a speed of 1600MHz
  • It has a x32 I/O interface and operates in a temperature range of -20°C to 85°C

Application

  • Future-proof solutions
  • Customizable options
  • User-friendly interfaces
Micron Technology Inventory

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ! NAND Flash Series NAND512
Brand Micron Memory Type ! NAND
Product NAND Flash Product Type ! NAND Flash
Subcategory Memory & Data Storage Tradename Numonyx

Specification Comparison

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification NAND512W3A2SN6E PDF Download

FAQs

What is NAND512W3A2SN6E?

The NAND512W3A2SN6E is a 512 Mbit (64M x 8) NAND Flash memory device manufactured by Micron Technology. It is designed for high-density data storage applications such as solid-state drives, digital cameras, and embedded systems.

How Does NAND512W3A2SN6E Work?

The NAND512W3A2SN6E works by storing digital data in a non-volatile memory array using NAND flash technology. It can be accessed for reading or writing data in a sequential manner through a dedicated interface. The memory device offers high-speed data transfer rates and high reliability, making it suitable for various data storage applications.

How Many Pins does NAND512W3A2SN6E have and What are the Functions of the Pinout Configuration?

The NAND512W3A2SN6E is housed in a 48-ball, 6mm x 8mm, 0.5mm pitch, lead-free VFBGA (Very Thin Fine-Pitch Ball Grid Array) package. The pinout configuration includes:

  • DQ0-DQ7: Data input/output pins.
  • RB: Ready/Busy output pin.
  • CLE: Command latch enable input pin.
  • ALE: Address latch enable input pin.
  • CE1: Chip enable input for device 1.
  • CE2: Chip enable input for device 2 (if available).
  • WP: Write protect input pin.
  • GND: Ground pins.
  • RB: Reset/Busy output pin.
  • VCC: Power supply pin.

What are the Pros and Cons of NAND512W3A2SN6E?

Pros:

  • High Density: Provides 512 Mbit of storage capacity in a compact package.
  • High-Speed Operation: Offers fast data transfer rates, suitable for high-performance applications.
  • Non-Volatile Memory: Retains data even when power is removed, ideal for storage applications.
  • Reliability: NAND flash technology provides reliable data storage for various operating conditions.
  • Compact Package: The VFBGA package offers a space-efficient solution for compact designs.

Cons:

  • Complex Interface: Requires specific protocols and commands for data access and manipulation.
  • Endurance Limit: NAND flash memory has a limited number of program/erase cycles, which may affect longevity in certain applications.
  • Complex Management: Requires wear-leveling and error-correction mechanisms for optimal utilization.

Are There Any Equivalents/Alternatives to NAND512W3A2SN6E for Recommendation?

Alternatives to the NAND512W3A2SN6E include:

  • MT29F512G08CJAAA from Micron Technology, offering similar capacity and performance.
  • W25N512GW from Winbond, providing NAND flash memory with comparable specifications.

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