NAND512W3A2SN6E
High-speed Parallel InterfaceNAND512W3A2SN6E
High-speed Parallel Interface
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NAND512W3A2SN6E DataSheet

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NAND512W3A2SN6E Details
The NAND512W3A2SN6E is a 512Gb NAND Flash memory chip from Micron Technology, designed for high-performance storage and data management applications. This device features a 3V operating voltage, 6ns random access time, and a 3V power supply, making it suitable for a wide range of industrial and commercial applications.
Pinout
- VCC (1): Positive Power Supply
- GND (2): Ground
- DQ (3-15): Data Input/Output
- WP (16): Write Protect
- RE (17): Ready/Erase
- CLE (18): Chip Select Logic Enable
- ALE (19): Address Latch Enable
- DQS (20-35): Data Input/Output Strobe
Key Features
The NAND512W3A2SN6E offers the following key features:
- 512Gb storage capacity
- 3V operating voltage
- 6ns random access time
- 3V power supply
- High-performance data management capabilities
Applications
The NAND512W3A2SN6E is suitable for a wide range of applications, including:
- Industrial control systems
- Automotive electronics
- Medical devices
- Aerospace and defense systems
- Data centers and cloud storage solutions
Where to Use
The NAND512W3A2SN6E is designed for use in a variety of environments, including:
- Industrial settings with high temperatures and humidity
- Aerospace and defense applications requiring high reliability and security
- Data centers and cloud storage solutions requiring high-performance data management
How to Use
To use the NAND512W3A2SN6E, follow these steps:
- Connect the VCC and GND pins to a suitable power supply
- Configure the WP, RE, CLE, and ALE pins according to your application's requirements
- Write data to the device using the DQ and DQS pins
- Read data from the device using the DQ and DQS pins
Equivalents
The NAND512W3A2SN6E can be used as a replacement or equivalent to other NAND Flash memory chips, including:
- NAND64G3A2SN6E
- NAND128G3A2SN6E
- NAND256G3A2SN6E
Complementary
The NAND512W3A2SN6E can be used in combination with other Micron Technology products, including:
- NOR Flash memory chips
- SRAM and DRAM memory modules
- Microcontrollers and system-on-chip (SoC) devices
Frequently Asked Questions
Q: What is the maximum write speed of the NAND512W3A2SN6E?
A: The maximum write speed of the NAND512W3A2SN6E is 100MB/s.
Q: Can the NAND512W3A2SN6E be used in high-reliability applications?
A: Yes, the NAND512W3A2SN6E is designed for use in high-reliability applications and meets the requirements of various industry standards.

Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | NAND Flash | Series | NAND512 |
Brand | Micron | Memory Type ! | NAND |
Product | NAND Flash | Product Type ! | NAND Flash |
Subcategory | Memory & Data Storage | Tradename | Numonyx |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is NAND512W3A2SN6E?
The NAND512W3A2SN6E is a 512 Mbit (64M x 8) NAND Flash memory device manufactured by Micron Technology. It is designed for high-density data storage applications such as solid-state drives, digital cameras, and embedded systems.
How Does NAND512W3A2SN6E Work?
The NAND512W3A2SN6E works by storing digital data in a non-volatile memory array using NAND flash technology. It can be accessed for reading or writing data in a sequential manner through a dedicated interface. The memory device offers high-speed data transfer rates and high reliability, making it suitable for various data storage applications.
How Many Pins does NAND512W3A2SN6E have and What are the Functions of the Pinout Configuration?
The NAND512W3A2SN6E is housed in a 48-ball, 6mm x 8mm, 0.5mm pitch, lead-free VFBGA (Very Thin Fine-Pitch Ball Grid Array) package. The pinout configuration includes:
- DQ0-DQ7: Data input/output pins.
- RB: Ready/Busy output pin.
- CLE: Command latch enable input pin.
- ALE: Address latch enable input pin.
- CE1: Chip enable input for device 1.
- CE2: Chip enable input for device 2 (if available).
- WP: Write protect input pin.
- GND: Ground pins.
- RB: Reset/Busy output pin.
- VCC: Power supply pin.
What are the Pros and Cons of NAND512W3A2SN6E?
Pros:
- High Density: Provides 512 Mbit of storage capacity in a compact package.
- High-Speed Operation: Offers fast data transfer rates, suitable for high-performance applications.
- Non-Volatile Memory: Retains data even when power is removed, ideal for storage applications.
- Reliability: NAND flash technology provides reliable data storage for various operating conditions.
- Compact Package: The VFBGA package offers a space-efficient solution for compact designs.
Cons:
- Complex Interface: Requires specific protocols and commands for data access and manipulation.
- Endurance Limit: NAND flash memory has a limited number of program/erase cycles, which may affect longevity in certain applications.
- Complex Management: Requires wear-leveling and error-correction mechanisms for optimal utilization.
Are There Any Equivalents/Alternatives to NAND512W3A2SN6E for Recommendation?
Alternatives to the NAND512W3A2SN6E include:
- MT29F512G08CJAAA from Micron Technology, offering similar capacity and performance.
- W25N512GW from Winbond, providing NAND flash memory with comparable specifications.
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Price details
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