MTD2N50
TO-252-packaged N-channel MOSFET transistor featuring a maximum drain-to-source voltage rating of 500 volts and a maximum drain current of 2 amperesMTD2N50
TO-252-packaged N-channel MOSFET transistor featuring a maximum drain-to-source voltage rating of 500 volts and a maximum drain current of 2 amperes
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Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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MTD2N50 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Interested Parts
MTD2N50 Description
The MTD2N50 is a high-voltage field-effect transistor designed for switching applications, offering enhanced power efficiency and low on-resistance.
Features
- Enhanced power efficiency: Optimized for low power consumption, ideal for battery-powered devices.
- High voltage rating of 500V: Suitable for high-voltage applications where reliable switching is required.
- Low on-resistance: Reduces energy losses and improves overall system efficiency.
- Fast switching speed: Enables high-frequency operation and rapid response times.
- Easy to drive with logic level gate drive: Simplifies circuit design and reduces component count.
- Low gate charge for reduced switching losses: Minimizes energy consumption and heat generation.
Applications
The MTD2N50 is commonly used in systems that require high-voltage switching, such as power supplies, motor control, and switching regulators.
Where to Use:
- Power supplies
- Motor control
- Switching regulators
- Inverters
- High voltage applications
- Automotive systems
- Industrial applications
- RF amplifiers
- LED drivers
- Medical equipment
Manufacturer
The MTD2N50 is manufactured by Motorola Semiconductor Products, a global leader in semiconductor technology.
Packages
The MTD2N50 comes in various packages, including TO-220 and DPAK, designed for surface-mount technology and through-hole mounting options.
Equivalent Parts of MTD2N50
- FQP6N30: A comparable N-channel power MOSFET from Fairchild Semiconductor with similar features and performance.
- IRF540N: An alternative N-channel power MOSFET from International Rectifier that offers equivalent functionality.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | No | Part Life Cycle Code | Obsolete |
Case Connection | DRAIN | Configuration | Single |
DS Breakdown Voltage-Min | 500 V | Drain Current-Max (Abs) (ID) | 2 A |
Drain Current-Max (ID) | 2 A | Drain-source On Resistance-Max | 4 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 50 pF |
JEDEC-95 Code | TO-252 | JESD-30 Code | R-PSSO-G2 |
JESD-609 Code | e0 | Number of Elements | 1 |
Number of Terminals | 2 | Operating Mode ! | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
Power Dissipation Ambient-Max | 20 W | Power Dissipation-Max (Abs) | 20 W |
Pulsed Drain Current-Max (IDM) | 4 A | Qualification Status ! | Not Qualified |
Surface Mount ! | YES | Terminal Finish | Tin/Lead (Sn/Pb) |
Terminal Form ! | GULL WING | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Turn-off Time-Max (toff) | 90 ns |
Turn-on Time-Max (ton) | 100 ns |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
Prices listed do not include VAT.
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