MT8HTF12864HDY-667E1
CMOS DDR DRAM Module featuring 128MX64 capacity, 0.45ns speed, and PDMA200 supportMT8HTF12864HDY-667E1
CMOS DDR DRAM Module featuring 128MX64 capacity, 0.45ns speed, and PDMA200 support
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Service & Packaging
Service & Packaging
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MT8HTF12864HDY-667E1 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Interested Parts
MT8HTF12864HDY-667E1 Description
The MT8HTF12864HDY-667E1 is a high-performance DDR2 SDRAM module from Micron Technology Inc., designed for use in desktop computers, laptops, servers, workstations, and other applications where reliable memory storage is essential. This module features 1GB of capacity, operates at a speed of 667MHz, and has a low profile design making it suitable for compact circuit designs.
Pin Details
The MT8HTF12864HDY-667E1 is a 240-pin DIMM (Dual In-Line Memory Module) with the following pin configuration:
- Capacity: 1GB
- Technology: DDR2 SDRAM
- Speed: 667MHz
- Form Factor: DIMM 240-pin
- Error Checking: Non-ECC
- Voltage: 1.8V
- Low Profile: Yes
- Module Configuration: 128M x 64
Features
- High Capacity: Offers 1GB of storage space for demanding applications.
- Fast Speed: Operates at a speed of 667MHz, ensuring efficient data transfer.
- Low Power Consumption: Optimized for low power usage, ideal for battery-powered devices.
- Wide Temperature Range: Operates efficiently between -40°C and +85°C.
Applications
This module is suitable for use in a wide range of applications including desktop computers, laptops, servers, workstations, and other devices where reliable memory storage is essential.
Where to Use:
- Desktop Computers: Ideal for use in desktop computers where high-capacity memory is required.
- Laptops: Suitable for use in laptops where low power consumption and compact design are important.
- Servers: Can be used in servers where high-performance memory storage is essential.
- Workstations: Ideal for use in workstations where demanding applications require high-capacity memory.
Manufacturer
The MT8HTF12864HDY-667E1 is manufactured by Micron Technology Inc., a global leader in semiconductor technology.
Packages
This module comes in a 240-pin DIMM (Dual In-Line Memory Module) package, designed for surface-mount technology and offering a compact and efficient solution for integrating the memory into electronic circuits.
Equivalent Parts of MT8HTF12864HDY-667E1
- MT8HTF25664HDY-533E1: A comparable DDR2 SDRAM module from Micron Technology Inc. with similar features and performance.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | Yes | Part Life Cycle Code | Obsolete |
ECCN Code | EAR99 | HTS Code ! | 8542.32.00.36 |
Access Time-Max | 0.45 ns | Clock Frequency-Max (fCLK) | 333 MHz |
I/O Type | COMMON | JESD-30 Code | R-PDMA-N200 |
Memory Density | 8589934592 bit | Memory IC Type | DDR DRAM MODULE |
Memory Width | 64 | Number of Terminals | 200 |
Number of Words | 134217728 words | Number of Words Code | 128000000 |
Operating Temperature-Max | 70 °C | Organization | 128MX64 |
Output Characteristics | 3-STATE | Package Body Material | PLASTIC/EPOXY |
Package Code | DIMM | Package Equivalence Code | DIMM200,24 |
Package Shape | RECTANGULAR | Package Style | MICROELECTRONIC ASSEMBLY |
Power Supplies ! | 1.8 V | Qualification Status ! | Not Qualified |
Refresh Cycles | 8192 | Standby Current-Max | 0.056 A |
Supply Current-Max | 2.16 mA | Supply Voltage-Nom (Vsup) | 1.8 V |
Surface Mount ! | NO | Technology | CMOS |
Temperature Grade ! | COMMERCIAL | Terminal Form ! | NO LEAD |
Terminal Pitch ! | 0.6 mm | Terminal Position | DUAL |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is MT8HTF12864HDY-667E1?
The MT8HTF12864HDY-667E1 is a DDR2 SDRAM (Double Data Rate 2 Synchronous Dynamic Random-Access Memory) module designed for use in computer systems and other digital devices. It offers high-speed, high-bandwidth memory access for improved system performance and responsiveness.
How Does MT8HTF12864HDY-667E1 Work?
The MT8HTF12864HDY-667E1 works by providing high-speed data storage and retrieval capabilities for computing systems. It utilizes DDR2 SDRAM technology, allowing data to be transferred on both the rising and falling edges of the clock signal, effectively doubling the data transfer rate compared to traditional SDRAM.
How Many Pins does MT8HTF12864HDY-667E1 have and What are the Functions of the Pinout Configuration?
The MT8HTF12864HDY-667E1 typically features 240-pin DDR2 SDRAM DIMM (Dual In-Line Memory Module) configuration. The pinout configuration includes:
- Data Lines: Multiple pins for bi-directional data transfer between the memory module and the memory controller.
- Address Lines: Pins used to specify the address of the data to be written or read.
- Control Lines: Pins for controlling the data transfer operations and timing.
- Power and Ground Pins: Pins for providing power supply and ground connections.
What are the Pros and Cons of MT8HTF12864HDY-667E1?
Pros:
- High Performance: Offers high-speed data transfer and low latency, improving overall system performance.
- Bandwidth: Provides high memory bandwidth, suitable for memory-intensive applications.
- Compatibility: Designed to be compatible with systems that support DDR2 SDRAM.
- Reliability: Offers stable and reliable operation for computing and digital devices.
Cons:
- Obsolete Technology: DDR2 SDRAM is an older memory technology and may not be suitable for the latest systems.
- Limited Capacity: Compared to newer memory standards, DDR2 SDRAM modules may offer lower capacity options.
- Power Consumption: May consume more power compared to newer, more power-efficient memory technologies.
Are There Any Equivalents/Alternatives to MT8HTF12864HDY-667E1 for Recommendation?
Alternatives to the MT8HTF12864HDY-667E1 include DDR3 and DDR4 SDRAM modules, which offer higher data transfer rates and larger capacities. Specific alternatives may include modules from manufacturers such as Samsung, Micron, and Hynix.
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Price details
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