MT48LC8M16A2TG-75IT

Name: MT48LC8M16A2TG-75IT
Brand: Micron
Rating: 4.5 (10 reviews)
Author: Lisleapex

Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54

7,575 Effective Inventory

MT48LC8M16A2TG-75IT

Effective Inventory7,575

Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54

Manufacturer Part # : MT48LC8M16A2TG-75IT
Package/Case: DSOP-54
Brand: Micron
Product Categories : DC DC Switching Controllers

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All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

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About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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MT48LC8M16A2TG-75IT DataSheet

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MT48LC8M16A2TG-75IT Details

GENERAL DESCRIPTIONThe Micron® 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-bit banks is organized as 4,096 rows by 2,048 columns by 4 bits. Each of the x8’s 33,554,432-bit banks is organized as 4,096 rows by 1,024 columns by 8 bits. Each of the x16’s 33,554,432-bit banks is organized as 4,096 rows by 512 columns by 16 bits.Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an AC TIVE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and row to be accessed (BA0, BA1 select the bank;A0-A11 select the row). The address bits registered coincident with the READ or WRITE command are used to select the starting column location for the burst access.The SDRAM provides for programmable READ or WRITE burst lengths of 1, 2, 4, or 8 locations, or the full page, with a burst terminate option. An auto precharge function may be enabled to provide a self timed row precharge that is initiated at the end of the burst sequence.The 128Mb SDRAM uses an internal pipelined architecture to achieve high-speed operation. This architecture is compatible with the 2n rule of prefetch architectures, but it also allows the column address to be changed on every clock cycle to achieve a high-speed, fully random access. Precharging one bank while access ing one of the other three banks will hide the precharge cycles and provide seamless high-speed, random-access operation.The 128Mb SDRAM is designed to operate in 3.3V memory systems. An auto refresh mode is provided, along with a power-saving, power-down mode. All inputs and outputs are LVTTL-compatible.SDRAMs offer substantial advances in DRAM operating performance, including the ability to synchronously burst data at a high data rate with automatic column address generation, the ability to interleave between internal banks in order to hide precharge time and the capability to randomly change column addresses on each clock cycle during a burst access.FEATURES• PC100-, and PC133-compliant• Fully synchronous; all signals registered on positive edge of system clock• Internal pipelined operation; column address can be changed every clock cycle• Internal banks for hiding row access/precharge• Programmable burst lengths: 1, 2, 4, 8, or full page• Auto Precharge, includes CONCURRENT AUTO PRECHARGE, and Auto Refresh Modes• Self Refresh Mode; standard and low power• 64ms, 4,096-cycle refresh• LVTTL-compatible inputs and outputs• Single +3.3V ±0.3V power supply

Key Features

PC100-, and PC133-compliant
Fully synchronous; all signals registered on positive edge of system clock
Internal pipelined operation; column address can be changed every clock cycle
Internal banks for hiding row access/precharge
Programmable burst lengths: 1, 2, 4, 8, or full page
Auto Precharge, includes CONCURRENT AUTO PRECHARGE, and Auto Refresh Modes
Self Refresh Mode; standard and low power
64ms, 4,096-cycle refresh
LVTTL-compatible inputs and outputs
Single +3.3V ±0.3V power supply

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code	No	Part Life Cycle Code	Obsolete
Part Package Code	TSOP2	Pin Count !	54
Reach Compliance Code	not_compliant	ECCN Code	EAR99
HTS Code !	8542.32.00.02	Access Mode !	FOUR BANK PAGE BURST
Access Time-Max	5.4 ns	Additional Feature !	AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)	133 MHz	I/O Type	COMMON
Interleaved Burst Length	1,2,4,8	JESD-30 Code	R-PDSO-G54
JESD-609 Code	e0	Length	22.22 mm
Memory Density	134217728 bit	Memory IC Type	SYNCHRONOUS DRAM
Memory Width	16	Number of Functions	1
Number of Ports !	1	Number of Terminals	54
Number of Words	8388608 words	Number of Words Code	8000000
Operating Mode !	SYNCHRONOUS	Operating Temperature-Max	85 °C
Operating Temperature-Min	-40 °C	Organization	8MX16
Output Characteristics	3-STATE	Package Body Material	PLASTIC/EPOXY
Package Code	TSOP2	Package Equivalence Code	TSOP54,.46,32
Package Shape	RECTANGULAR	Package Style	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel)	235	Power Supplies !	3.3 V
Qualification Status !	Not Qualified	Refresh Cycles	4096
Seated Height-Max	1.2 mm	Self Refresh	YES
Sequential Burst Length	1,2,4,8,FP	Standby Current-Max	0.002 A
Supply Current-Max	0.31 mA	Supply Voltage-Max (Vsup)	3.6 V
Supply Voltage-Min (Vsup)	3 V	Supply Voltage-Nom (Vsup)	3.3 V
Surface Mount !	YES	Technology	CMOS
Temperature Grade !	INDUSTRIAL	Terminal Finish	Tin/Lead (Sn/Pb)
Terminal Form !	GULL WING	Terminal Pitch !	0.8 mm
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Width	10.16 mm

Specification Comparison

MT48LC8M16A2TG-75 vs MT48LC8M16A2TG-75IT vs MT48LC8M16A2TG-7E MT48LC8M16A2P-75IT:G vs MT48LC8M16A2TG-75IT vs MT48LC8M16A2TG-7E

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification MT48LC8M16A2TG-75IT PDF Download