MT47H32M16HR-25E:G

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High-performance memory module for demanding computing applications, featuring M x DDR DRAM and a fast access time of n

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Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

Shipping & Payment

About Shipping

We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

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MT47H32M16HR-25E:G DataSheet

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Please submit RFQ for MT47H32M16HR-25E:G or email to us: Email: [email protected], we will contact you in 12 hours.

MT47H32M16HR-25E:G Details

The MT47H32M16HR-25E:G is a 512MB DDR3 SDRAM chip from Micron, designed for high-speed data transfer and reliable operation in a variety of applications. This device features a capacity of 512MB, an operating speed of 400MHz, and operates at a voltage of 1.5V. It is organized as 32M words x 16 bits x 8 banks, offering fast and efficient data access.

Key Features

  • High-Speed Data Transfer: Offers a data transfer rate of up to 800MB/s for fast and efficient data access.
  • 512MB Capacity: Provides ample memory capacity for demanding applications requiring significant storage space.
  • 400MHz Operating Speed: Optimized for high-speed operation, ideal for applications where speed is critical.

Application

  • Enhancing Network Performance: Suitable for network-based applications requiring fast and reliable data transfer.
  • Revolutionizing Automotive Technology: Used in automotive systems where high-speed data access is critical, such as infotainment and navigation systems.
  • Powering Industrial Innovation: Applied in industrial control systems where high-capacity memory and fast data transfer rates are essential.

Where to Use

The MT47H32M16HR-25E:G is suitable for applications requiring high-speed data transfer, ample memory capacity, and reliable operation. This can include server systems, networked devices, automotive applications, and industrial control systems.

How to Use

The MT47H32M16HR-25E:G is designed for use in various electronic systems. For detailed usage instructions, including pin connections, electrical specifications, and programming guidelines, refer to the datasheet.

Application Circuit

The application circuit diagram for the MT47H32M16HR-25E:G illustrates how to integrate this device into your system. It includes connections for power supply, ground, and communication lines, ensuring proper operation and optimal performance.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Complementary

The MT47H32M16HR-25E:G can be complemented by other Micron memory devices with similar features and specifications, tailored to your specific application requirements.

Frequently Asked Questions

Q: What is the maximum data transfer rate supported by the MT47H32M16HR-25E:G?

A: The MT47H32M16HR-25E:G supports a data transfer rate of up to 800MB/s. For more details, refer to the datasheet for specific operating conditions and limitations.

Q: Is the MT47H32M16HR-25E:G suitable for automotive applications?

A: Yes, the MT47H32M16HR-25E:G is suitable for use in automotive systems where high-speed data transfer and reliable operation are critical.

MT47H32M16HR-25E:G

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ! DRAM Series MT47H
Brand Micron Product Type ! DRAM
Subcategory Memory & Data Storage

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification MT47H32M16HR-25E:G PDF Download

FAQs

What is MT47H32M16HR-25E:G?

The MT47H32M16HR-25E:G is a high-speed, high-density, 512Mb DDR2 SDRAM (Double Data Rate 2 Synchronous Dynamic Random-Access Memory) module manufactured by Micron Technology. It is designed for use in high-performance computing systems, servers, and networking equipment requiring fast and reliable memory access.

How Does MT47H32M16HR-25E:G Work?

The MT47H32M16HR-25E:G operates as a DDR2 SDRAM memory module that can transfer data on both the rising and falling edges of the clock signal, effectively doubling the data transfer rate compared to single data rate memory. It synchronizes data transfer with the system clock, providing high-speed access to stored information.

How Many Pins does MT47H32M16HR-25E:G have and What are the Functions of the Pinout Configuration?

The MT47H32M16HR-25E:G typically comes in a 84-ball FBGA (Fine-pitch Ball Grid Array) package. The pinout configuration includes:

  • Data Input/Output Lines (DQ): Bi-directional data lines for transferring data.
  • Address Lines (A): Lines for specifying the memory address for read/write operations.
  • Control Lines (RAS, CAS, WE, CS): Control signals for row access strobe, column access strobe, write enable, and chip select.
  • Clock (CLK): Input for the system clock signal.
  • Power and Ground Pins (VDD, VSS): Power supply and ground connections.

What are the Pros and Cons of MT47H32M16HR-25E:G?

Pros:

  • High Speed: Offers fast data transfer rates, enhancing system performance.
  • High Density: Provides large memory capacity in a compact form factor.
  • Reliability: Manufactured by Micron Technology, known for quality memory products.
  • Compatibility: Conforms to industry standards for DDR2 SDRAM modules.

Cons:

  • Obsolete Technology: DDR2 SDRAM is an older memory standard compared to DDR3 and DDR4.
  • Power Consumption: Consumes more power compared to newer, low-power memory technologies.
  • Limited Future Upgradability: May not be compatible with newer systems designed for DDR3 or DDR4 memory.

Are There Any Equivalents/Alternatives to MT47H32M16HR-25E:G for Recommendation?

  • Alternatives to the MT47H32M16HR-25E:G include DDR2 SDRAM modules from other manufacturers like Samsung, SK Hynix, and Nanya.
  • For higher performance and compatibility with newer systems, consider upgrading to DDR3 or DDR4 memory modules.

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