MT46V32M16P-6T
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Service & Packaging
Service & Packaging
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All Parts Extended Quality Guarantee
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MT46V32M16P-6T DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Interested Parts
MT46V32M16P-6T Description
The MT46V32M16P-6T is a 512MB DDR SDRAM chip with a speed rating of 6T, designed for high-performance computing applications. This module features low power consumption and high-speed data transfer, making it suitable for industrial control systems.
Pin Details
The MT46V32M16P-6T is a DDR SDRAM chip with pins for data input/output, address inputs, and control signals. It includes pins for receiving, driving, and enabling signals, along with power supply and ground connections.
Pin configuration
- Data Input/Output Pins: DQ0-DQ31 (Data Input/Output)
- Address Inputs: A0-A12 (Address Inputs)
- Control Signals: CKE, CKE#, RAS, CAS, WE, DM (Control Signals)
Features
- High-Speed Data Transfer: Supports speeds up to 533 MHz for high-performance computing applications.
- Low Power Consumption: Optimized for low power usage, ideal for battery-powered devices or energy-efficient systems.
- 512MB Capacity: Offers a large memory capacity for storing and processing data-intensive applications.
Applications
The MT46V32M16P-6T is commonly used in various applications such as servers, printers, networking equipment, and telecommunications systems that require high-performance computing capabilities.
Where to Use:
- Industrial control systems
- Data centers
- Cloud computing infrastructure
- Battery-powered devices or energy-efficient systems
Manufacturer
The MT46V32M16P-6T is manufactured by Micron Technology, a global leader in semiconductor technology. It falls under the category of DDR SDRAM chips, which are designed to facilitate high-speed data transfer and processing.
Packages
The MT46V32M16P-6T comes in a 100-pin FBGA (Fine Pitch Ball Grid Array) package. This package is designed for surface-mount technology, offering a compact and efficient solution for integrating the chip into electronic circuits.
Equivalent Parts of MT46V32M16P-6T
- Micron Technology: MT46V32M8P-4T (A comparable DDR SDRAM chip with similar features and performance)
- Samsung Electronics: K4B2G0846D-HC10 (An alternative DDR SDRAM chip that offers equivalent functionality)

Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Obsolete | Part Package Code | TSOP |
Pin Count ! | 66 | Reach Compliance Code | compliant |
ECCN Code | EAR99 | HTS Code ! | 8542.32.00.28 |
Date Of Intro | 1999-02-01 | Access Mode ! | FOUR BANK PAGE BURST |
Access Time-Max | 0.7 ns | Additional Feature ! | AUTO/SELF REFRESH |
Clock Frequency-Max (fCLK) | 167 MHz | I/O Type | COMMON |
Interleaved Burst Length | 2,4,8 | JESD-30 Code | R-PDSO-G66 |
JESD-609 Code | e3 | Length | 22.22 mm |
Memory Density | 536870912 bit | Memory IC Type | DDR1 DRAM |
Memory Width | 16 | Number of Functions | 1 |
Number of Ports ! | 1 | Number of Terminals | 66 |
Number of Words | 33554432 words | Number of Words Code | 32000000 |
Operating Mode ! | SYNCHRONOUS | Operating Temperature-Max | 70 °C |
Organization | 32MX16 | Output Characteristics | 3-STATE |
Package Body Material | PLASTIC/EPOXY | Package Code | TSSOP |
Package Equivalence Code | TSSOP66,.46 | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Peak Reflow Temperature (Cel) | 260 |
Power Supplies ! | 2.5 V | Qualification Status ! | Not Qualified |
Refresh Cycles | 8192 | Seated Height-Max | 1.2 mm |
Self Refresh | YES | Sequential Burst Length | 2,4,8 |
Standby Current-Max | 0.005 A | Supply Voltage-Max (Vsup) | 2.7 V |
Supply Voltage-Min (Vsup) | 2.3 V | Supply Voltage-Nom (Vsup) | 2.5 V |
Surface Mount ! | YES | Technology | CMOS |
Temperature Grade ! | COMMERCIAL | Terminal Finish | MATTE TIN |
Terminal Form ! | GULL WING | Terminal Pitch ! | 0.65 mm |
Terminal Position | DUAL | Width | 10.16 mm |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is MT46V32M16P-6T?
The MT46V32M16P-6T is a 512Mb Double Data Rate Synchronous Dynamic Random Access Memory (DDR SDRAM) designed by Micron Technology. It is suitable for high-performance computing, networking, and telecommunications applications that require high-speed and high-bandwidth memory capabilities.
How Does MT46V32M16P-6T Work?
The MT46V32M16P-6T works by providing high-speed data storage and retrieval capabilities for digital systems. It utilizes double data rate (DDR) architecture, synchronizing data transfers with the system clock to achieve high-speed operation. The memory device features a synchronous interface, allowing for precise data input and output timing.
How Many Pins does MT46V32M16P-6T have and What are the Functions of the Pinout Configuration?
The MT46V32M16P-6T is housed in a 60-ball FBGA (Fine-pitch Ball Grid Array) package. The pinout configuration includes:
- DQ: Data input/output pins.
- BA, A: Address pins for bank selection and row/column addressing.
- CLK, /CKE, /CS, /WE, /RAS, /CAS: Control and clock pins for memory operation.
- DM: Data mask pins for write data control.
- VDD, VDDQ, VSS: Power and ground pins for the memory device.
What are the Pros and Cons of MT46V32M16P-6T?
Pros:
- High Bandwidth: Provides high-speed data transfer capabilities for demanding applications.
- Synchronous Interface: Offers precise timing control for reliable data transfers.
- High Density: 512Mb capacity allows for large memory storage in a compact form factor.
- Low Power Consumption: Operates with low power, suitable for power-sensitive systems.
- RoHS Compliant: Meets environmental standards for lead-free manufacturing.
Cons:
- Complex Interface: Requires careful consideration of timing and control for proper operation.
- Thermal Considerations: May require thermal management in high-speed or high-density applications.
- Cost: Higher capacity and high-speed memory devices may have a higher cost compared to lower-speed alternatives.
Are There Any Equivalents/Alternatives to MT46V32M16P-6T for Recommendation?
- The MT47H64M16HR-25E from Micron Technology is a similar DDR SDRAM with higher speed and performance.
- Alternatives to the MT46V32M16P-6T include the K4B1G1646G from Samsung and the IS42S16320G from Integrated Silicon Solution, Inc. (ISSI).
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