MT46H64M16LFBF-5IT:B
Mobile LPDDR SDRAMMT46H64M16LFBF-5IT:B
Mobile LPDDR SDRAM
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MT46H64M16LFBF-5IT:B DataSheet
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MT46H64M16LFBF-5IT:B Details
The MT46H64M16LFBF-5IT:B is a DDR SDRAM module from Micron Technology, designed for high-speed and efficient data storage in computing and embedded systems. This module offers a capacity of 1GB and operates at a speed of 400MHz, providing reliable performance for various memory-intensive applications.
Pinout
- DQ: Data Input/Output
- DQS: Data Strobe
- DM: Data Mask
- RAS: Row Address Strobe
- CAS: Column Address Strobe
- WE: Write Enable
- CS: Chip Select
- CK: Clock
- VDD/VDDQ: Power Supply
- VSS/VSSQ: Ground
(Tip: For detailed pinout information, please refer to the corresponding datasheet.)
Key Features
- High Capacity: Offers a 1GB storage capacity for large data handling.
- High Speed: Operates at a speed of 400MHz, ensuring fast data access and transfer.
- Low Power Consumption: Designed for efficient power usage in both active and standby modes.
- Reliable Performance: Provides consistent and reliable performance in memory-intensive applications.
- Industry Standard: Conforms to industry-standard DDR SDRAM specifications for compatibility.
Application
- Computer Systems: Suitable for use in desktops, laptops, and servers for memory expansion and performance enhancement.
- Embedded Systems: Used in embedded devices and industrial applications requiring reliable data storage and retrieval.
- Networking Equipment: Ideal for networking devices and routers to support high-speed and efficient data processing.
Where to Use
The MT46H64M16LFBF-5IT:B is ideal for applications that demand high-speed and reliable DDR SDRAM storage. It is commonly used in computer systems, embedded devices, and networking equipment for efficient data handling and processing.
How to Use
Install the MT46H64M16LFBF-5IT:B module in the compatible memory slot on your system's motherboard. Ensure proper alignment and secure connection. Configure system settings to recognize the new memory capacity and utilize it for enhanced performance. For detailed installation and configuration instructions, refer to the datasheet.
Equivalents
- MT47H64M16HR-25E: A similar DDR SDRAM module offering comparable capacity and speed specifications from Micron Technology.
- K4B1G0846D: An alternative DDR SDRAM module with equivalent functionality and performance from Samsung Electronics.
Complementary
The MT46H64M16LFBF-5IT:B can be complemented by the MT47H32M16HR-3IT, which provides additional memory capacity and speed for more demanding computing applications.
When selecting complementary memory modules, ensure compatibility with existing system configurations for optimal performance and reliability.
Frequently Asked Questions
Q: What is the operating voltage of the MT46H64M16LFBF-5IT:B module?
A: The MT46H64M16LFBF-5IT:B operates at a standard voltage of 1.8V. Refer to the datasheet for detailed electrical specifications and operating conditions.
Q: Is the MT46H64M16LFBF-5IT:B backward compatible with DDR2 memory slots?
A: No, the MT46H64M16LFBF-5IT:B is designed for DDR1 memory slots and is not compatible with DDR2 or DDR3 slots due to differences in pin configuration and signaling.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Active | Part Package Code | BGA |
Pin Count ! | 60 | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | HTS Code ! | 8542.32.00.32 |
Access Mode ! | FOUR BANK PAGE BURST | Access Time-Max | 5 ns |
Additional Feature ! | AUTO/SELF REFRESH | Clock Frequency-Max (fCLK) | 200 MHz |
I/O Type | COMMON | Interleaved Burst Length | 2,4,8,16 |
JESD-30 Code | R-PBGA-B60 | JESD-609 Code | e1 |
Length | 9 mm | Memory Density | 1073741824 bit |
Memory IC Type | DDR1 DRAM | Memory Width | 16 |
Number of Functions | 1 | Number of Ports ! | 1 |
Number of Terminals | 60 | Number of Words | 67108864 words |
Number of Words Code | 64000000 | Operating Mode ! | SYNCHRONOUS |
Operating Temperature-Max | 85 °C | Operating Temperature-Min | -40 °C |
Organization | 64MX16 | Output Characteristics | 3-STATE |
Package Body Material | PLASTIC/EPOXY | Package Code | VFBGA |
Package Equivalence Code | BGA60,9X10,32 | Package Shape | RECTANGULAR |
Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Peak Reflow Temperature (Cel) | 260 |
Power Supplies ! | 1.8 V | Qualification Status ! | Not Qualified |
Refresh Cycles | 8192 | Seated Height-Max | 1 mm |
Self Refresh | YES | Sequential Burst Length | 2,4,8,16 |
Standby Current-Max | 0.00001 A | Supply Current-Max | 0.135 mA |
Supply Voltage-Max (Vsup) | 1.95 V | Supply Voltage-Min (Vsup) | 1.7 V |
Supply Voltage-Nom (Vsup) | 1.8 V | Surface Mount ! | YES |
Technology | CMOS | Temperature Grade ! | INDUSTRIAL |
Terminal Finish | TIN SILVER COPPER | Terminal Form ! | BALL |
Terminal Pitch ! | 0.8 mm | Terminal Position | BOTTOM |
Time@Peak Reflow Temperature-Max (s) | 30 | Width | 8 mm |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is MT46H64M16LFBF-5IT:B?
The MT46H64M16LFBF-5IT:B is a 1Gb DDR SDRAM (Double Data Rate Synchronous Dynamic Random-Access Memory) module manufactured by Micron Technology. It is designed for high-speed, high-bandwidth memory applications in various electronic devices such as computers, networking equipment, and consumer electronics.
How Does MT46H64M16LFBF-5IT:B Work?
The MT46H64M16LFBF-5IT:B operates by providing high-bandwidth data storage and retrieval capabilities for electronic systems. It utilizes double data rate technology to achieve high-speed access to stored data. The SDRAM module interfaces with the system bus and processor, allowing efficient data transfer and processing.
How Many Pins does MT46H64M16LFBF-5IT:B have and What are the Functions of the Pinout Configuration?
The MT46H64M16LFBF-5IT:B is configured in a 60-ball VFBGA (Very Fine Ball Grid Array) package. The pinout configuration includes:
- Data Pins: Multiple data pins for bi-directional data transfer.
- Address Pins: Pins for specifying the memory address for read or write operations.
- Control Pins: Pins for control signals such as clock, chip select, and data strobe.
- Power and Ground Pins: Pins for power supply and ground connections.
What are the Pros and Cons of MT46H64M16LFBF-5IT:B?
Pros:
- High Bandwidth: Offers high-speed data transfer capabilities, suitable for demanding applications.
- Large Capacity: Provides 1Gb of memory capacity for storing a significant amount of data.
- Compatibility: Designed to be compatible with standard SDRAM interfaces for easy integration into existing systems.
- Reliability: Manufactured by Micron Technology, known for producing reliable memory solutions.
- Efficient Data Access: Utilizes double data rate technology for efficient data retrieval and processing.
Cons:
- Complex Interface: Requires careful consideration of timing and control signals for proper operation.
- Temperature Sensitivity: SDRAM modules may have temperature and voltage sensitivity that needs to be managed in the system design.
- Cost: Higher capacity and high-speed memory modules may come at a higher cost.
Are There Any Equivalents/Alternatives to MT46H64M16LFBF-5IT:B for Recommendation?
- The Samsung K4B1G0846F is a similar 1Gb DDR SDRAM module with comparable features.
- Alternatives to the MT46H64M16LFBF-5IT:B include the Hynix H5TC1G63EFR and the Elpida EDB8132B4PB.
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