MT41K128M16JT-125AAT:K
This product is a DRAM DDR3 module with a capacity of 2 gigabytes and a memory organization of 128MX16 in FBGA form factorMT41K128M16JT-125AAT:K
This product is a DRAM DDR3 module with a capacity of 2 gigabytes and a memory organization of 128MX16 in FBGA form factor
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Manufacturer Part # : MT41K128M16JT-125AAT:K
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Package/Case: FBGA
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Brand: Micron
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Product Categories : Controllers
Quality Assurance
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Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
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Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
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MT41K128M16JT-125AAT:K DataSheet
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Interested Parts
MT41K128M16JT-125AAT:K Details
The MT41K128M16JT-125AAT:K is a DDR3 SDRAM module from Micron Technology, designed for high-performance and reliable memory applications. This module offers a capacity of 2GB and operates at a speed of 125MHz, providing fast and efficient data processing for various computing tasks.
Pinout
- DQ0-DQ15: Data Input/Output
- BA0-BA1: Bank Address Inputs
- A0-A14: Row Address Inputs
- RAS, CAS, WE: Control Inputs
- CK, CK#: Clock Inputs
- CS#: Chip Select Input
- DM0-DM7: Data Mask Inputs
- DQS, DQS#: Data Strobe Inputs
- CLK: Clock Input for DLL and Reset
- RESET: Reset Input
- VDD, VDDQ: Power Supply Inputs
- VSS, VSSQ: Ground Inputs
(Tip: For detailed pinout information, please refer to the corresponding datasheet.)
Key Features
- High Performance: Operates at a speed of 125MHz for efficient data processing.
- Large Capacity: Offers a capacity of 2GB for storing and accessing a significant amount of data.
- DDR3 Technology: Utilizes DDR3 SDRAM technology for enhanced performance and reliability.
- Multiple Inputs: Supports various control, address, and data inputs for flexible application compatibility.
- Low Power Consumption: Designed for energy efficiency and reduced power consumption during operation.
Application
- Computer Systems: Suitable for use in computer systems, servers, and workstations for memory-intensive tasks.
- Networking Devices: Used in networking equipment for efficient data processing and communication.
- Embedded Systems: Ideal for embedded systems and industrial applications that require reliable memory performance.
Where to Use
The MT41K128M16JT-125AAT:K is perfect for applications requiring high-speed and reliable memory performance, such as computer systems, networking devices, and embedded applications. It is ideal for tasks that demand efficient data storage and processing capabilities.
How to Use
Install the MT41K128M16JT-125AAT:K module in the compatible memory slot on your system, ensuring proper alignment and insertion. Connect the necessary control signals and power inputs according to the datasheet specifications. Configure the memory settings in the system BIOS or firmware for optimal performance. Refer to the datasheet for detailed installation and configuration instructions.
Application Circuit
The application circuit diagram for the MT41K128M16JT-125AAT:K illustrates how to connect the DDR3 SDRAM module to the system motherboard. It includes connections for data, address, control signals, and power, ensuring proper functionality and data transfer.
(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)
Equivalents
- MT41K256M16TW-107: An alternative DDR3 SDRAM module with similar performance and compatibility.
- K4B2G0846D: A comparable memory module from Samsung offering equivalent features.
Complementary
The MT41K128M16JT-125AAT:K can be complemented by the MT41K128M16JT-125AB, which offers a slightly different configuration while maintaining compatibility with existing systems. Consider system requirements and compatibility when choosing complementary memory modules.
Ensure that the complementary memory modules meet the necessary specifications and standards to ensure optimal performance and system stability.
Frequently Asked Questions
Q: What is the maximum speed supported by the MT41K128M16JT-125AAT:K module?
A: The MT41K128M16JT-125AAT:K module operates at a speed of 125MHz. Consult the datasheet for detailed speed specifications and timing characteristics.
Q: Is the MT41K128M16JT-125AAT:K compatible with DDR4 systems?
A: No, the MT41K128M16JT-125AAT:K is a DDR3 SDRAM module and is not compatible with DDR4 systems due to differences in technology and specifications.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Active | Part Package Code | BGA |
Pin Count ! | 96 | Reach Compliance Code | compliant |
ECCN Code | EAR99 | HTS Code ! | 8542.32.00.36 |
Access Mode ! | MULTI BANK PAGE BURST | Additional Feature ! | AUTO/SELF REFRESH |
Clock Frequency-Max (fCLK) | 800 MHz | I/O Type | COMMON |
Interleaved Burst Length | 8 | JESD-30 Code | R-PBGA-B96 |
JESD-609 Code | e1 | Length | 14 mm |
Memory Density | 2147483648 bit | Memory IC Type | DDR3L DRAM |
Memory Width | 16 | Number of Functions | 1 |
Number of Ports ! | 1 | Number of Terminals | 96 |
Number of Words | 134217728 words | Number of Words Code | 128000000 |
Operating Mode ! | SYNCHRONOUS | Operating Temperature-Max | 105 °C |
Operating Temperature-Min | -40 °C | Organization | 128MX16 |
Output Characteristics | 3-STATE | Package Body Material | PLASTIC/EPOXY |
Package Code | TFBGA | Package Equivalence Code | BGA96,9X16,32 |
Package Shape | RECTANGULAR | Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH |
Power Supplies ! | 1.35 V | Qualification Status ! | Not Qualified |
Refresh Cycles | 8192 | Screening Level | AEC-Q100 |
Seated Height-Max | 1.2 mm | Self Refresh | YES |
Sequential Burst Length | 8 | Standby Current-Max | 0.012 A |
Supply Current-Max | 0.195 mA | Supply Voltage-Max (Vsup) | 1.45 V |
Supply Voltage-Min (Vsup) | 1.283 V | Supply Voltage-Nom (Vsup) | 1.35 V |
Surface Mount ! | YES | Technology | CMOS |
Temperature Grade ! | INDUSTRIAL | Terminal Finish | TIN SILVER COPPER |
Terminal Form ! | BALL | Terminal Pitch ! | 0.8 mm |
Terminal Position | BOTTOM | Width | 8 mm |
Ihs Manufacturer | MICRON TECHNOLOGY INC | Package Description | TFBGA, BGA96,9X16,32 |
Samacsys Manufacturer | Micron |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is MT41K128M16JT-125AAT:K?
The MT41K128M16JT-125AAT:K is a 2Gb DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random-Access Memory) module designed by Micron Technology. It is ideal for high-performance computing, networking, and embedded applications that require fast and efficient data storage and retrieval.
How Does MT41K128M16JT-125AAT:K Work?
The MT41K128M16JT-125AAT:K works by storing and retrieving digital information in a synchronous manner based on clock signals. It utilizes double data rate technology to achieve high-speed data transfer rates, making it suitable for demanding memory-intensive applications. The module features a high-speed interface and operates at low power, providing a balance between performance and energy efficiency.
How Many Pins does MT41K128M16JT-125AAT:K have and What are the Functions of the Pinout Configuration?
The MT41K128M16JT-125AAT:K module is based on a 96-ball FBGA (Fine-Pitch Ball Grid Array) package. The pinout configuration includes:
- Data Lines: Multiple data input/output pins for bi-directional communication.
- Address Lines: Pins for specifying the memory address for read or write operations.
- Control Lines: Pins for chip enable, clock, and other control signals.
- Power and Ground Pins: Pins for power supply and reference ground connections.
- DM Lines: Data mask pins for write data masking during write operations.
- DQS/DQS# Lines: Differential data strobe pins for aligned data capture.
What are the Pros and Cons of MT41K128M16JT-125AAT:K?
Pros:
- High Performance: Offers high-speed data transfer rates for memory-intensive applications.
- Low Power Operation: Provides energy-efficient performance for reduced power consumption.
- High Density: Provides 2Gb density, suitable for memory-intensive computing and storage requirements.
- High Bandwidth: Supports high-bandwidth data transfer for improved system responsiveness.
- Industry Standard: Complies with DDR3 SDRAM industry specifications for compatibility and reliability.
Cons:
- Compatibility: Requires compatibility with DDR3 SDRAM interfaces and controllers.
- Complexity: Configuration and timing considerations may require careful system design and validation.
- Cost: High-density and high-performance modules like the MT41K128M16JT-125AAT:K may have higher associated costs.
Are There Any Equivalents/Alternatives to MT41K128M16JT-125AAT:K for Recommendation?
- Similar DDR3 SDRAM modules include the Samsung K4B2G0846D and the Hynix H5TQ2G63DFR.
- Alternatives to the MT41K128M16JT-125AAT:K include DDR3 SDRAM modules from other manufacturers such as Samsung, Hynix, and Nanya.
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