MT40A1G8WE-083E:B
High-density memory componentMT40A1G8WE-083E:B
High-density memory component
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MT40A1G8WE-083E:B DataSheet

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MT40A1G8WE-083E:B Details
The MT40A1G8WE-083E:B is a 1Gb DDR4 SDRAM module from Micron Technology, designed for high-performance computing applications. This device features an operating voltage of 1.2V and operates at a speed of 2666Mbps. It is organized as a 1G x 8 configuration, making it suitable for demanding memory-intensive tasks.
Pinout
- DQ0-DQ7: Data Input/Output Pins (8)
- Ba0-Ba7: Bank Address Pins (8)
- RAS# and CAS#: Row Address Strobe and Column Address Strobe Pins (2)
- WE#: Write Enable Pin (1)
- CK: Clock Input Pin (1)
- VDD and VSS: Positive and Negative Power Supply Pins (2)
(Tip: For detailed pinout information, please refer to the corresponding datasheet.)
Key Features
- 1Gb DDR4 SDRAM Capacity: Provides large storage capacities for demanding applications.
- 2666Mbps Speed: Offers high-speed data transfer and processing capabilities.
- 1.2V Operating Voltage: Ensures reliable operation in a wide range of systems.
- Organized as 1G x 8 Configuration: Facilitates efficient memory access and management.
Applications
The MT40A1G8WE-083E:B is suitable for a wide range of applications, including:
- High-performance computing systems: Ideal for demanding memory-intensive tasks.
- Data centers and cloud storage solutions: Provides reliable and efficient data storage and processing capabilities.
- Embedded systems and IoT devices: Suitable for a wide range of embedded applications requiring high-speed memory access.
Where to Use
The MT40A1G8WE-083E:B can be used in various environments, including:
- Desktop and laptop computers: Suitable for high-performance computing applications.
- Data centers and cloud storage facilities: Provides reliable data storage and processing capabilities.
- Embedded systems and IoT devices: Ideal for a wide range of embedded applications requiring high-speed memory access.
How to Use
To use the MT40A1G8WE-083E:B, follow these steps:
- Connect the device to your system's memory bus: Ensure proper connections for data transfer and processing.
- Configure the device's operating parameters: Set the operating voltage, speed, and other parameters according to your specific application requirements.
- Verify the device's operation: Test the device to ensure reliable operation and performance.
Application Circuit
The application circuit diagram for the MT40A1G8WE-083E:B illustrates how to connect the device to your system's memory bus. It includes connections for power supply, ground, and data transfer lines, ensuring proper operation and reliable data processing.
(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)
Equivalents
- MT40A1G8VE-083E:B: A similar 1Gb DDR4 SDRAM module from Micron Technology offering comparable features and performance.
- Other DDR4 SDRAM modules: Alternative memory devices with equivalent functionality, suitable for different application requirements.
Complementary
The MT40A1G8WE-083E:B can be complemented by other Micron Technology products, including:
- MT41J512M16HY-125:A: A high-speed DDR4 SDRAM module offering enhanced performance and capacity.
- Other memory devices: Alternative memory solutions with complementary features and capabilities, suitable for different application requirements.
Frequently Asked Questions
Q: What is the maximum speed supported by the MT40A1G8WE-083E:B?
A: The MT40A1G8WE-083E:B supports a maximum speed of 2666Mbps. For more details, refer to the datasheet for specific operating conditions and limitations.
Q: Can the MT40A1G8WE-083E:B be used in automotive applications?
A: Yes, the MT40A1G8WE-083E:B is suitable for use in automotive applications, providing reliable and efficient data storage and processing capabilities.

Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | DRAM | RoHS | Details |
Type | SDRAM - DDR4 | Mounting Style | SMD/SMT |
Package / Case | FBGA-78 | Data Bus Width | 8 bit |
Organization | 1 G x 8 | Memory Size ! | 8 Gbit |
Maximum Clock Frequency | 1.2 GHz | Supply Voltage - Max | 1.26 V |
Supply Voltage - Min | 1.14 V | Supply Current - Max | 68 mA |
Minimum Operating Temperature | 0 C | Maximum Operating Temperature ! | + 95 C |
Series | MT40A | Brand | Micron |
Product Type ! | DRAM | Factory Pack Quantity | 1140 |
Subcategory | Memory & Data Storage |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is MT40A1G8WE-083E:B?
The MT40A1G8WE-083E:B is a 1Gb DDR4 SDRAM module designed by Micron Technology. It is a high-density, high-speed memory module suitable for use in a wide range of computing and networking applications, including servers, workstations, and high-performance computing systems.
How Does MT40A1G8WE-083E:B Work?
The MT40A1G8WE-083E:B works by providing synchronous dynamic random-access memory (SDRAM) functionality with a high-speed DDR4 interface. It enables fast data transfer and storage for processor operations, ensuring efficient performance in data-intensive applications.
How Many Pins does MT40A1G8WE-083E:B have and What are the Functions of the Pinout Configuration?
The MT40A1G8WE-083E:B DDR4 SDRAM module is typically designed with a 260-pin SODIMM (Small Outline Dual In-Line Memory Module) form factor. The pinout configuration includes:
- Data Lines: Multiple pins for bi-directional data transfer between the SDRAM module and the system.
- Address Lines: Pins for specifying the memory address for read or write operations.
- Control Lines: Pins for controlling various operations such as row activation, column activation, and precharging.
- Power and Ground Pins: Pins for providing power supply and ground connections to the module.
- Clock and Reset Pins: Pins for clock signal input and reset signal.
What are the Pros and Cons of MT40A1G8WE-083E:B?
Pros:
- High Density: Provides 1Gb of memory in a single module, enabling higher memory capacity in space-constrained systems.
- High Speed: Offers high-speed DDR4 interface for rapid data transfer and access.
- Low Power Consumption: Operates at low voltage levels, contributing to energy efficiency.
- Wide Compatibility: Compatible with a variety of computing and networking platforms designed for DDR4 memory.
- Reliable Performance: Provides stable and reliable memory operations for demanding applications.
Cons:
- Cost: Higher density and speed may lead to a higher cost compared to lower-density or older generation memory modules.
- Compatibility: Requires compatibility with DDR4-enabled systems and may not be backward compatible with older DDR standards.
- Complexity: DDR4 module design and layout may require careful consideration for signal integrity and timing.
Are There Any Equivalents/Alternatives to MT40A1G8WE-083E:B for Recommendation?
- Similar high-density DDR4 SDRAM modules include the Samsung M378A1G43DB0-CPB and the Hynix HMA81GS6DJR8N-XN.
- Alternatives to the MT40A1G8WE-083E:B include DDR4 SDRAM modules from other manufacturers such as Samsung, SK Hynix, and Kingston.
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