MT29F8G08ABABAWP:B
Advanced SLC technology ensures reliable and fast storage solution for various applicationMT29F8G08ABABAWP:B
Advanced SLC technology ensures reliable and fast storage solution for various application
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MT29F8G08ABABAWP:B DataSheet

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MT29F8G08ABABAWP:B Details
The MT29F8G08ABABAWP:B is a NAND flash memory device from Micron Technology, designed for use in a variety of storage applications. This device features 8GB of memory, supporting high data throughput and low power consumption. It is ideal for applications requiring reliable and efficient data storage solutions, such as mobile devices, tablets, and embedded systems.
Pinout
- 1 (CLE): Command Latch Enable
- 2 (ALE): Address Latch Enable
- 3 (WE): Write Enable
- 4 (RE): Read Enable
- 5 (RE#): Read Enable (active low)
- 6 (GND): Ground
- 7 (DQ0-DQ7): Data Input/Output
- 8 (VCC): Power Supply
(Tip: For detailed pinout information, please refer to the corresponding datasheet.)
Key Features
- High Density: Offers 8GB of NAND flash memory storage for various applications.
- Low Power Consumption: Designed for low energy usage, making it suitable for battery-operated devices.
- Fast Data Transfer Rates: Supports high-speed data read/write operations for efficient performance.
- Durable and Reliable: Built to withstand the rigors of daily operation and frequent read/write cycles.
- Versatile Applications: Ideal for use in smartphones, tablets, and embedded systems.
Application
- Mobile Devices: Used extensively in smartphones and tablets for efficient data storage.
- Embedded Systems: Perfect for embedded applications requiring reliable, high-capacity memory.
- Consumer Electronics: Suitable for various electronics including cameras, gaming consoles, and routers.
Where to Use
The MT29F8G08ABABAWP:B is suitable for applications requiring compact and efficient data storage, especially in mobile and embedded environments. It is ideal for situations where high performance, low power consumption, and reliability are key requirements.
How to Use
Connect the MT29F8G08ABABAWP:B to your circuit, ensuring the VCC and GND pins are connected to the power supply. The DQ0-DQ7 pins should be used for data input and output, while the CLE, ALE, WE, and RE pins control command and address latching. For detailed usage instructions, refer to the datasheet.
Application Circuit
The application circuit diagram for the MT29F8G08ABABAWP:B outlines the proper connections to integrate the NAND flash memory into your system. This includes wiring for power supply, ground, and data lines to ensure optimal performance and reliability.
(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)
Equivalents
- MT29F16G08ABABAWP:B: A similar NAND flash memory device with a higher density storage option from Micron.
- W29N02GVSIA: An alternative NAND flash memory product from Winbond with noteworthy capabilities.
Complementary
The MT29F8G08ABABAWP:B can be complemented by the MT29F8G08ABABAWP:A, which offers enhanced features and slightly varying specifications tailored for different performance needs.
When selecting complementary devices, ensure compatibility with your specific application requirements to achieve optimal performance.
Frequently Asked Questions
Q: What is the storage capacity of the MT29F8G08ABABAWP:B?
A: The MT29F8G08ABABAWP:B has a storage capacity of 8GB. For more details, refer to the datasheet for specific performance details.
Q: Can the MT29F8G08ABABAWP:B be used in low-power applications?
A: Yes, it is designed for low power consumption, making it suitable for battery-powered devices and energy-efficient applications.

Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | NAND Flash | RoHS | Details |
Series | MT29F | Brand | Micron |
Moisture Sensitive | Yes | Product | NAND Flash |
Product Type ! | NAND Flash | Factory Pack Quantity | 960 |
Subcategory | Memory & Data Storage |
FAQs
What is MT29F8G08ABABAWP:B?
The MT29F8G08ABABAWP:B is a NAND Flash memory device manufactured by Micron Technology. It is designed for high-capacity data storage and reliable performance in various electronic systems, such as smartphones, digital cameras, and automotive infotainment systems.
How Does MT29F8G08ABABAWP:B Work?
The MT29F8G08ABABAWP:B works by storing digital data in a non-volatile memory array composed of floating gate transistors. It utilizes NAND Flash technology to achieve high-density storage and fast access times. The device communicates with the host system through a standard NAND Flash interface, enabling seamless integration into a wide range of applications.
How Many Pins does MT29F8G08ABABAWP:B have and What are the Functions of the Pinout Configuration?
The MT29F8G08ABABAWP:B is typically available in a 63-ball, 0.50mm pitch, BGA (Ball Grid Array) package. The pinout configuration includes:
- DQ0-DQ15: Data input/output pins for the NAND Flash interface.
- CE: Chip enable input for device selection.
- CLE: Command latch enable input for command input.
- ALE: Address latch enable input for address input.
- WE: Write enable input for programming data.
- RE: Read enable input for reading data.
- R/B: Ready/Busy output for device status.
- RP, RF: Additional pins for device operation and control.
What are the Pros and Cons of MT29F8G08ABABAWP:B?
Pros:
- High Capacity: Offers a large storage capacity for data-intensive applications.
- Fast Access Times: Provides quick read and write operations, enhancing system performance.
- Durable: NAND Flash technology ensures robust and reliable data retention.
- Small Form Factor: BGA package design optimizes space utilization in compact designs.
Cons:
- Complex Interface: Requires careful consideration of NAND Flash interface signals for proper integration.
- Endurance Limit: NAND Flash memory has a limited number of program/erase cycles, requiring wear-leveling algorithms for extended lifespan.
- Write/Read Latency: Inherent latency in write and read operations compared to other types of memory.
Are There Any Equivalents/Alternatives to MT29F8G08ABABAWP:B for Recommendation?
- The Samsung K9GAG08U0E is a similar NAND Flash memory device suitable as an alternative.
- Alternatives to the MT29F8G08ABABAWP:B include the Toshiba THGBM5G7A4JBAIR and the SK Hynix H27UCG8T2ATR.
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