MT29F4G08ABAEAWP-IT:E

Name: MT29F4G08ABAEAWP-IT:E
Availability: InStock
Rating: 4.5 (10 reviews)
Author: Lisleapex

SLC NAND Flash Parallel 3.3V 4G-bit 512M x 8 48-Pin TSOP Tray

8,590 Effective Inventory

MT29F4G08ABAEAWP-IT:E

Effective Inventory8,590

SLC NAND Flash Parallel 3.3V 4G-bit 512M x 8 48-Pin TSOP Tray

Manufacturer Part # : MT29F4G08ABAEAWP-IT:E
Package/Case: SOP-48
Part Status : NRND
Brand: Micron Technology
Product Categories : Memory
Series : MT29F4G08
RoHS:

Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

About Shipping

We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.

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About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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MT29F4G08ABAEAWP-IT:E DataSheet

Pricing (USD)

Quantity	Unit Price	Ext. Price
1000	$2.095	$2,095.00
500	$2.148	$1,074.00
100	$2.265	$226.50
30	$2.520	$75.60
10	$2.772	$27.72
1	$3.197	$3.20

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

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MT29F4G08ABAEAWP-IT:E Details

The MT29F4G08ABAEAWP-IT:E is a NAND flash memory chip from Micron Technology, designed for reliable data storage in electronic devices. This high-density memory module offers a capacity of 4Gb, ensuring ample storage space for various applications. It features fast read and write speeds, making it suitable for data-intensive tasks and applications.

Pinout

DQ0-DQ7: Data Input/Output Lines
DQ8-DQ15: Data Input/Output Lines
DQ16-DQ23: Data Input/Output Lines
DQ24-DQ31: Data Input/Output Lines
R/B: Ready/Busy Output
CE: Chip Enable
CLE: Command Latch Enable
ALE: Address Latch Enable
WE: Write Enable
RE: Read Enable
RST: Reset
VCC: Power Supply
GND: Ground

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

High Density: Offers a storage capacity of 4Gb for ample data storage.
Fast Read/Write Speeds: Provides high-speed data access for efficient operation.
Reliable Data Storage: Designed for reliable data storage and retrieval in electronic devices.
Low Power Consumption: Operates with low power consumption for energy efficiency.
Data Protection: Features built-in mechanisms for data protection and error correction.

Application

Embedded Systems: Ideal for use in embedded systems requiring reliable data storage.
Consumer Electronics: Used in various consumer electronic devices for data storage.
Automotive Applications: Suitable for automotive applications that demand high-density storage.

Where to Use

The MT29F4G08ABAEAWP-IT:E is suitable for applications that require high-density, reliable data storage with fast read/write speeds. It is commonly used in embedded systems, consumer electronics, and automotive applications for data storage and retrieval needs.

How to Use

Integrate the MT29F4G08ABAEAWP-IT:E into your circuit by connecting the various data, control, and power lines as per the datasheet specifications. Ensure proper power supply connections to VCC and GND, and follow the recommended read/write operations using the corresponding control signals. For detailed usage instructions, refer to the datasheet.

Application Circuit

The application circuit diagram for the MT29F4G08ABAEAWP-IT:E showcases how to incorporate the NAND flash memory chip into your system. It outlines the connections for data lines, control signals, and power supply, ensuring proper functionality and data integrity.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

W25N01GV: A comparable NAND flash memory chip with similar features and performance.
S34ML04G2: An alternative high-density NAND flash memory chip for data storage applications.

Complementary

The MT29F4G08ABAEAWP-IT:E can be complemented by the MT29F8G08ABACAWP-IT:E, offering double the capacity for larger storage needs. Pairing complementary memory chips ensures seamless data storage and access in complex electronic systems.

When selecting complementary memory chips, verify compatibility and performance requirements for optimal system operation.

Frequently Asked Questions

Q: What is the typical power consumption of the MT29F4G08ABAEAWP-IT:E during read/write operations?

A: The MT29F4G08ABAEAWP-IT:E operates with a low power consumption profile during read/write operations, ensuring energy efficiency in electronic devices. Refer to the datasheet for specific power consumption figures under different operating conditions.

Q: Can the MT29F4G08ABAEAWP-IT:E be used in automotive infotainment systems?

A: Yes, the MT29F4G08ABAEAWP-IT:E is suitable for automotive infotainment systems, providing high-density data storage capabilities for multimedia and application data.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category !	NAND Flash	RoHS	Details
Mounting Style	SMD/SMT	Package / Case	TSOP-48
Series	MT29F	Memory Size !	4 Gbit
Interface Type	Parallel	Organization	512 M x 8
Timing Type	Asynchronous	Data Bus Width	8 bit
Supply Voltage - Min	2.7 V	Supply Voltage - Max	3.6 V
Supply Current - Max	35 mA	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature !	+ 85 C	Active Read Current - Max	30 mA
Brand	Micron	Moisture Sensitive	Yes
Product	NAND Flash	Product Type !	NAND Flash
Factory Pack Quantity	960	Subcategory	Memory & Data Storage

FAQs

What is MT29F4G08ABAEAWP-IT:E?

The MT29F4G08ABAEAWP-IT:E is a NAND Flash memory chip manufactured by Micron Technology. It is designed for high-density data storage and retrieval in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives.

How Does MT29F4G08ABAEAWP-IT:E Work?

The MT29F4G08ABAEAWP-IT:E works by storing digital data in memory cells organized in a grid. It uses NAND flash technology, where data is stored in blocks that can be electrically erased and reprogrammed. The chip interfaces with the device's controller to read from and write data to the memory cells.

How Many Pins does MT29F4G08ABAEAWP-IT:E have and What are the Functions of the Pinout Configuration?

The MT29F4G08ABAEAWP-IT:E is typically available in a TSOP (Thin Small Outline Package) with a specific pinout configuration that includes:

VCC: Power supply pin.
GND: Ground pin.
A0-A18: Address input pins for selecting memory locations.
DQ0-DQ7: Data input/output pins for transferring data.
WE: Write enable pin for initiating write operations.
CE: Chip enable pin for activating the chip.
R/B: Ready/Busy pin for indicating the status of the chip.

What are the Pros and Cons of MT29F4G08ABAEAWP-IT:E?

Pros:

High Density: Offers high storage capacity for large amounts of data.
Fast Access Speed: Allows for quick read and write operations.
Durable: NAND flash technology provides reliable data storage over multiple read/write cycles.
Compact Size: TSOP package is space-efficient for various device designs.
Industry Standard: Produced by Micron Technology, a reputable memory chip manufacturer.

Cons:

Endurance Limit: Limited number of program/erase cycles compared to other types of memory.
Complex Controller: Requires a dedicated controller for interfacing with the chip.
Data Retention: Data may degrade over time without power.

Are There Any Equivalents/Alternatives to MT29F4G08ABAEAWP-IT:E for Recommendation?

Similar NAND Flash memory chips to the MT29F4G08ABAEAWP-IT:E include the Samsung K9 series and Toshiba TH series.
Alternative high-density storage solutions include SSDs (Solid-State Drives) and eMMC (embedded MultiMediaCard) modules.