MRF648

Effective Inventory7,506

RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN,

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Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

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Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

Shipping & Payment

About Shipping

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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MRF648 DataSheet

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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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Rapid Quote

Please submit RFQ for MRF648 or email to us: Email: [email protected], we will contact you in 12 hours.

MRF648 Description

The MRF648 is a high-power NPN silicon RF power transistor designed for use in power amplifier applications, featuring a maximum collector current of 15A, a maximum collector-emitter voltage of 80V, and a power dissipation of 200W. This device operates in the HF and VHF frequency range and is suitable for high power linear and Class C amplifier applications.

Pin Details

The MRF648 is a low-power RF power transistor with 8 pins for half-duplex communication. It includes pins for receiving, driving, and enabling signals, along with power supply and ground connections.

Pin configuration

  • Collector: Collector pin of the transistor
  • Emitter: Emitter pin of the transistor
  • Base: Base pin of the transistor
  • GND: Ground connection for the transistor
  • VCC: Positive power supply voltage for the transistor

Features

  • High Power Handling: The MRF648 can handle high power levels, making it suitable for amplifier applications.
  • Wide Frequency Range: It operates in the HF and VHF frequency range, allowing for a wide range of applications.
  • Low Noise Figure: The transistor has a low noise figure, ensuring minimal distortion in amplified signals.
  • High Gain: The MRF648 has high gain, making it suitable for amplifier applications where high power and efficiency are required.

Applications

The MRF648 is commonly used in systems that require high-power amplification, such as HF/VHF transmitters, industrial, scientific, and medical (ISM) devices, and radio frequency (RF) amplifiers.

Where to Use:

  • Radio Frequency Amplifiers: The MRF648 is suitable for use in RF amplifiers that require high power handling and low noise figure.
  • HF/VHF Transmitters: It can be used in HF/VHF transmitters where high-power amplification is required.
  • ISM Devices: The MRF648 is suitable for use in ISM devices that require high power handling and low noise figure.

Manufacturer

The MRF648 is manufactured by Fairchild Semiconductor, a leading provider of semiconductor solutions.

Packages

The MRF648 comes in an 8-pin SOIC-8 (Small Outline Integrated Circuit) package. This package is designed for surface-mount technology, offering a compact and efficient solution for integrating the transistor into electronic circuits.

Equivalent Parts of MRF648

  • MRF651: A comparable RF power transistor from Fairchild Semiconductor with similar features and performance.
  • MRF660: An alternative RF power transistor from Motorola that offers equivalent functionality.
MRF648

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Part Life Cycle Code Active ECCN Code EAR99
Case Connection EMITTER Collector Current-Max (IC) 11 A
Collector-Base Capacitance-Max 150 pF Collector-Emitter Voltage-Max 16 V
Configuration SINGLE DC Current Gain-Min (hFE) 20
Highest Frequency Band ULTRA HIGH FREQUENCY BAND JESD-30 Code O-CXFM-F4
Number of Elements 1 Number of Terminals 4
Operating Temperature-Max 200 °C Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND Package Style FLANGE MOUNT
Polarity/Channel Type NPN Power Dissipation-Max (Abs) 175 W
Qualification Status ! Not Qualified Surface Mount ! YES
Terminal Form ! FLAT Terminal Position UNSPECIFIED
Transistor Application AMPLIFIER Transistor Element Material SILICON

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification MRF648 PDF Download

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