MRF450
NPN Silicon Power Bipolar TransistorMRF450
NPN Silicon Power Bipolar Transistor
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Manufacturer Part # : MRF450
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Package/Case: TO-55R
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Product Categories : Single Bipolar Transistors
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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MRF450 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Interested Parts
MRF450 Details
The MRF450 is a high-power NPN type Bipolar Junction Transistor (BJT) primarily used in RF amplifier applications. It operates at frequencies up to 450 MHz and has a power output of 50 watts. This transistor is specifically designed for applications where high gain, high efficiency, and low distortion are required, making it ideal for use in equipment such as transmitters, amplifiers, and oscillators.The MRF450 has a maximum collector-base voltage of 65 volts and a maximum collector-emitter voltage of 28 volts. It is housed in a TO-220 package, which provides good thermal conductivity and easy mounting. The transistor has a gain of 12.5 dB and an input impedance of 30 ohms.In terms of performance, the MRF450 has a power gain of 11 dB and an efficiency of 55% at 175 MHz. It can handle a maximum collector current of 10 amps and a maximum dissipation of 150 watts. The transistor also has a low noise figure, making it suitable for high-frequency applications where signal clarity is crucial.
Key Features
- High power RF transistor
- Operates in the 450-470 MHz frequency range
- Designed for use in applications such as mobile radios, FM transmitters, and repeaters
- Provides high gain and efficiency
- Can deliver output power up to 100 watts
- Offers excellent linearity and thermal stability
Application
- Amateur radio equipment
- Mobile radio systems
- RF power amplifiers
- Industrial heating systems
- Medical diathermy equipment
- Microwave ovens
- Radar systems
- RF energy generators
- Satellite communication systems
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | No | Part Life Cycle Code | Obsolete |
Reach Compliance Code | ECCN Code | EAR99 | |
HTS Code ! | 8541.29.00.95 | Collector Current-Max (IC) | 7.5 A |
Collector-Base Capacitance-Max | 200 pF | Collector-Emitter Voltage-Max | 20 V |
Configuration | SINGLE | DC Current Gain-Min (hFE) | 10 |
JESD-30 Code | O-CRFM-F4 | JESD-609 Code | e0 |
Number of Elements | 1 | Number of Terminals | 4 |
Operating Temperature-Max | 150 °C | Package Body Material | CERAMIC, METAL-SEALED COFIRED |
Package Shape | ROUND | Package Style | FLANGE MOUNT |
Polarity/Channel Type | NPN | Power Dissipation Ambient-Max | 115 W |
Power Dissipation-Max (Abs) | 115 W | Qualification Status ! | Not Qualified |
Surface Mount ! | NO | Terminal Finish | TIN LEAD |
Terminal Form ! | FLAT | Terminal Position | RADIAL |
Transistor Application | AMPLIFIER | Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
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