MRF282Z

Name: MRF282Z
Brand: Freescale
Rating: 4.5 (10 reviews)
Author: Lisleapex

RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

7,884 Effective Inventory

MRF282Z

Effective Inventory7,884

RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Manufacturer Part # : MRF282Z
Package/Case: SOT-538
Brand: Freescale
Product Categories : RF FETs, MOSFETs

Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

About Shipping

We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.

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Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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MRF282Z DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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MRF282Z Description

The MRF282Z is a high-performance RF power field-effect transistor from Motorola, designed for reliable amplification in wireless communication systems. This device features a silicon N-channel metal-oxide semiconductor FET structure, making it suitable for L-band applications.

Pin Details

The MRF282Z has 1 element and is housed in a package that provides easy integration into electronic circuits.

Features

High Power Handling: Designed to handle high power levels, making it suitable for demanding wireless communication applications.
Low Noise Figure: Offers a low noise figure, ensuring reliable amplification and minimizing signal distortion.
Wide Operating Temperature Range: Operates efficiently between -40°C and +125°C, allowing it to function reliably in various environmental conditions.

Applications

The MRF282Z is commonly used in wireless communication systems that require high power amplification, such as satellite communications, microwave links, and radar applications.

Where to Use:

Satellite communications
Microwave links
Radar applications

Manufacturer

The MRF282Z is manufactured by Motorola, a global leader in semiconductor technology.

Packages

The MRF282Z comes in an 8-VDFN package, making it suitable for compact circuit designs.

Equivalent Parts of MRF282Z

MRF281Z: A comparable RF power field-effect transistor from Motorola with similar features and performance.

FAQ

Q: What is the operating temperature range of the MRF282Z?
A: It operates within a wide temperature range of -40°C to +125°C, allowing it to function reliably in various environmental conditions.

Q: How does the MRF282Z handle high power levels?
A: It is designed to handle high power levels, making it suitable for demanding wireless communication applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code	No	Part Life Cycle Code	Obsolete
ECCN Code	EAR99	Case Connection	SOURCE
Configuration	SINGLE	DS Breakdown Voltage-Min	65 V
FET Technology	METAL-OXIDE SEMICONDUCTOR	Highest Frequency Band	L BAND
JESD-30 Code	R-CDSO-G2	JESD-609 Code	e0
Number of Elements	1	Number of Terminals	2
Operating Mode !	ENHANCEMENT MODE	Operating Temperature-Max	200 °C
Package Body Material	CERAMIC, METAL-SEALED COFIRED	Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE	Polarity/Channel Type	N-CHANNEL
Qualification Status !	Not Qualified	Surface Mount !	YES
Terminal Finish	Tin/Lead (Sn/Pb)	Terminal Form !	GULL WING
Terminal Position	DUAL	Transistor Application	AMPLIFIER
Transistor Element Material	SILICON

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification MRF282Z PDF Download