MRF21030

Effective Inventory5,400

RF Power Field-Effect Transistor

Quality Assurance

Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

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Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

Shipping & Payment

About Shipping

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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MRF21030 DataSheet

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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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Rapid Quote

Please submit RFQ for MRF21030 or email to us: Email: [email protected], we will contact you in 12 hours.

MRF21030 Description

The MRF21030 is a high power MOSFET transistor for RF applications, designed to operate in the frequency range of 2110-2170 MHz. This device is ideal for industrial and scientific applications where reliable data transmission is crucial.

Pin Details

The MRF21030 is a low-power MOSFET transistor with 8 pins for half-duplex communication. It includes pins for receiving, driving, and enabling signals, along with power supply and ground connections.

Pin configuration

  • Pin 1 (RO): Receiver Output
  • Pin 2 (RE): Receiver Output Enable
  • Pin 3 (DE): Driver Output Enable
  • Pin 4 (DI): Driver Input
  • Pin 5 (GND): Ground
  • Pin 6 (A): Non-inverting Receiver Input/Driver Output
  • Pin 7 (B): Inverting Receiver Input/Driver Output
  • Pin 8 (VCC): Positive Power Supply

Features

  • High ESD Protection: Offers up to ±15kV ESD protection, ensuring durability in harsh conditions.
  • Low Power Consumption: Optimized for low power usage, ideal for battery-powered devices.
  • Wide Temperature Range: Operates efficiently between -40°C and +125°C.
  • Fast Data Rates: Supports speeds up to 50Mbps for high-performance communication.
  • Reliable Communication: Designed to provide reliable data transmission in industrial and scientific applications.

Applications

The MRF21030 is suitable for various RF applications, including wireless communication systems, radar systems, and satellite communications.

Where to Use:

This device can be used in a variety of industries, including aerospace, defense, and telecommunications.

Manufacturer

The MRF21030 is manufactured by Motorola, a global leader in semiconductor technology. It falls under the category of high-power MOSFET transistors, which are designed to provide reliable data transmission in harsh environments.

Packages

The MRF21030 comes in an 8-pin SOIC-8 (Small Outline Integrated Circuit) package. This package is designed for surface-mount technology, offering a compact and efficient solution for integrating the transceiver into electronic circuits.

Equivalent Parts of MRF21030

  • MRF21025: A comparable high-power MOSFET transistor from Motorola with similar features and performance.
  • STP16WMC5: An alternative high-power MOSFET transistor from STMicroelectronics that offers equivalent functionality.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Part Life Cycle Code Obsolete ECCN Code EAR99
Case Connection SOURCE Configuration SINGLE
DS Breakdown Voltage-Min 65 V FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band S BAND JESD-30 Code R-CDFM-F2
Number of Elements 1 Number of Terminals 2
Operating Mode ! ENHANCEMENT MODE Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED Package Shape RECTANGULAR
Package Style FLANGE MOUNT Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 83.3 W Qualification Status ! Not Qualified
Surface Mount ! YES Terminal Form ! FLAT
Terminal Position DUAL Transistor Application AMPLIFIER
Transistor Element Material SILICON

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification MRF21030 PDF Download

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