MRF21030

Name: MRF21030
Brand: Motorola Semiconductor Products
Rating: 4.5 (10 reviews)
Author: Lisleapex

RF Power Field-Effect Transistor

5,400 Effective Inventory

MRF21030

Effective Inventory5,400

RF Power Field-Effect Transistor

Manufacturer Part # : MRF21030
Package/Case: 465E
Brand: Motorola Semiconductor Products
Product Categories : RF FETs, MOSFETs

Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

About Shipping

We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.

About Payment

We accept various payment methods, including VISA, MasterCard, UnionPay, Western Union, PayPal, and other channels.

If you have a specific payment method in mind or would like to inquire about rates and other details, please feel free to contact us.

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Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

Example

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MRF21030 DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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MRF21030 Details

The MRF21030 is a high power N-channel RF power field effect transistor (FET) designed for broadband commercial and industrial applications operating at frequencies up to 400 MHz. It offers a power output of 100 watts with a gain of 15 dB and a drain efficiency of 55%. The device is housed in a compact, air-cavity package that provides excellent thermal performance and ensures reliable operation under high power conditions.The MRF21030 features a rugged design with high voltage capability, making it ideal for use in high power amplifiers, transmitters, and other RF applications that require high efficiency and reliability. It has a low thermal resistance of 0.25 degrees Celsius per watt, allowing for efficient heat dissipation and improved performance in high power applications.The FET operates at a supply voltage of 28 volts and has a maximum drain current of 20 amperes. It is also capable of handling a maximum input power of 5 watts, making it suitable for a wide range of RF power amplification applications. The MRF21030 is designed for high power operation and offers excellent linearity and distortion performance, making it a versatile choice for a variety of RF applications

Key Features

Frequency range: 2110-2170 MHz
Power gain: 15 dB
Efficiency: 40%
Operating voltage: 48V
Integrated ESD protection

Application

Amateur radio
Wireless communication systems
RF power amplifiers
Radar systems
Industrial and scientific applications
Satellite communication systems
2.4 GHz or 5 GHz WiFi transmitters
RF energy harvesting systems
Cellular base stations
Microwave ovens

Motorola Semiconductor Products Inventory

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Part Life Cycle Code	Obsolete	Reach Compliance Code
ECCN Code	EAR99	Case Connection	SOURCE
Configuration	SINGLE	DS Breakdown Voltage-Min	65 V
FET Technology	METAL-OXIDE SEMICONDUCTOR	Highest Frequency Band	S BAND
JESD-30 Code	R-CDFM-F2	Number of Elements	1
Number of Terminals	2	Operating Mode !	ENHANCEMENT MODE
Operating Temperature-Max	200 °C	Package Body Material	CERAMIC, METAL-SEALED COFIRED
Package Shape	RECTANGULAR	Package Style	FLANGE MOUNT
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	83.3 W
Qualification Status !	Not Qualified	Surface Mount !	YES
Terminal Form !	FLAT	Terminal Position	DUAL
Transistor Application	AMPLIFIER	Transistor Element Material	SILICON

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification MRF21030 PDF Download