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MRF182
RF Power Field-Effect Transistor for Ultra High Frequency Band, N-Channel Silicon MOSFETMRF182
RF Power Field-Effect Transistor for Ultra High Frequency Band, N-Channel Silicon MOSFET
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Manufacturer Part # : MRF182
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Package/Case: SMD
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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MRF182 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
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MRF182 Description
The MRF182 is a RF Power Field-Effect Transistor from Advanced Semiconductor Inc, designed for high-frequency applications. This device is ideal for use in telecommunication systems, broadcast amplifiers, radar systems, military communications, satellite communication systems, and radio frequency (RF) amplifiers, featuring high linearity, low noise figure, and high dynamic range.
Features
- Frequency Range: Frequency range of 1770-1800 MHz
- Typical Gain: Typical gain of 18 dB
- High Linearity: High linearity for stable operation
- Low Noise Figure: Low noise figure for minimized interference
- DESigned Applications: Designed for digital pre-distortion, CATV, and mobile radio applications
- High Dynamic Range: High dynamic range for reliable operation
Application
The MRF182 is commonly used in systems that require high-frequency performance, such as telecommunication systems.
Where to Use:
- Telecommunication systems
- Broadcast amplifiers
- Radar systems
- Military communications
- Satellite communication systems
- Radio frequency (RF) amplifiers
- Wireless infrastructure
Manufacturer
The MRF182 is manufactured by Advanced Semiconductor Inc, a global leader in semiconductor technology.
This product was developed to meet the growing demand for high-frequency performance in various industries including telecommunications, broadcast, and defense.
Packages
The MRF182 comes in an Unpackaged form, making it suitable for custom package design.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Part Life Cycle Code | Active | ECCN Code | EAR99 |
| Configuration | SINGLE | DS Breakdown Voltage-Min | 65 V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
| JESD-30 Code | R-MDFM-F2 | Number of Elements | 1 |
| Number of Terminals | 2 | Operating Mode ! | ENHANCEMENT MODE |
| Operating Temperature-Max | 200 °C | Package Body Material | METAL |
| Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 74 W |
| Qualification Status ! | Not Qualified | Surface Mount ! | YES |
| Terminal Form ! | FLAT | Terminal Position | DUAL |
| Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
Prices listed do not include VAT.
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