MRF171A

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N-channel RF MOSFET with 65V voltage rating and 4.5A current capacity

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MRF171A DataSheet

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MRF171A Details

The MRF171A is a high-power RF transistor designed for use in applications such as pulsed radar systems, linear amplifiers, and other industrial communication networks. This device features excellent thermal stability, high power performance, and a frequency range of 50-160MHz, making it suitable for demanding RF applications.

Pinout

  • 1 (G): Gate
  • 2 (D): Drain
  • 3 (S): Source
  • 4 (VCC): Positive Power Supply
  • 5 (GND): Ground

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

  • High Power Performance: Designed for high-power applications with excellent thermal stability.
  • Frequency Range: Operates over a frequency range of 50-160MHz, suitable for various RF applications.
  • Excellent Thermal Stability: Features excellent thermal stability, ensuring reliable operation in demanding environments.
  • High Gain: Offers high gain performance, making it suitable for amplification and transmission of RF signals.

Applications

The MRF171A is designed for use in various industrial communication networks, including:

  • Pulsed radar systems
  • Linear amplifiers
  • Other high-power RF applications

Where to Use

The MRF171A is suitable for use in various environments, including:

  • Industrial communication networks
  • Radar systems
  • Aerospace and defense applications

How to Use

To use the MRF171A, connect the gate (G) to a suitable RF signal source, the drain (D) to a load or transmission line, and the source (S) to ground. Ensure proper power supply connections to VCC and GND. For detailed usage instructions, refer to the datasheet.

Application Circuit

The application circuit diagram for the MRF171A illustrates how to connect the transistor to a pulsed radar system or linear amplifier. It includes connections for power supply, ground, and RF signal transmission lines, ensuring proper operation and reliable performance.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

  • MRF170A: A similar RF transistor from Fairchild Semiconductor offering comparable features and performance.
  • MRF172A: An alternative RF transistor from Fairchild Semiconductor with equivalent functionality.

Complementary

The MRF171A can be complemented by the MRF170A or MRF172A, which offer additional features such as higher gain and frequency range, suitable for more demanding RF applications.

When selecting complementary transistors, ensure that their features and specifications align with your specific application requirements for optimal performance and compatibility.

Frequently Asked Questions

Q: What is the maximum frequency range supported by the MRF171A?

A: The MRF171A operates over a frequency range of 50-160MHz. For more details, refer to the datasheet for specific operating conditions and limitations.

Q: Can the MRF171A be used in aerospace and defense applications?

A: Yes, the MRF171A is suitable for use in aerospace and defense applications due to its high-power performance, excellent thermal stability, and reliable operation in demanding environments.

MRF171A

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ! RF MOSFET Transistors RoHS Details
Transistor Polarity N-Channel Technology Si
Id - Continuous Drain Current 4.5 A Vds - Drain-Source Breakdown Voltage 65 V
Operating Frequency ! 150 MHz Gain 17 dB
Output Power ! 45 W Minimum Operating Temperature - 65 C
Maximum Operating Temperature ! + 150 C Mounting Style SMD/SMT
Package / Case 211-07-3 Brand MACOM
Configuration Single Pd - Power Dissipation 115 W
Product Type ! RF MOSFET Transistors Factory Pack Quantity 20
Subcategory MOSFETs Type RF Power MOSFET
Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V
Unit Weight 0.309000 oz

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