MRF171

Name: MRF171
Brand: Motorola Semiconductor Products
Rating: 4.5 (10 reviews)
Author: Lisleapex

RF MOSFET Transistors MRF171

5,665 Effective Inventory

MRF171

Effective Inventory5,665

RF MOSFET Transistors MRF171

Manufacturer Part # : MRF171
Package/Case: 211-07-3
Brand: Motorola Semiconductor Products
Product Categories : RF FETs, MOSFETs

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MRF171 DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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MRF171 Details

The MRF171 is a high-power RF transistor designed for use in applications requiring high gain and power output. This transistor is suitable for RF power amplification in radio frequency communication systems, radar systems, and industrial applications. It offers excellent performance and reliability in high-frequency circuits.

Pinout

1 (GND): Ground
2 (RF IN): RF Input
3 (RF OUT): RF Output
4 (VCC): Positive Power Supply

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

High Power Output: Capable of delivering high RF power output for strong signal transmission.
High Gain: Offers high gain to amplify weak signals effectively.
Wide Frequency Range: Operates over a wide frequency range suitable for different RF applications.
Reliable Performance: Ensures reliable and consistent performance in high-frequency circuits.
Low Distortion: Maintains low distortion levels for clear signal transmission.

Application

Radio Frequency Communication: Ideal for RF power amplification in communication systems.
Radar Systems: Used in radar systems for signal transmission and reception.
Industrial Applications: Suitable for industrial RF applications requiring high power output.

Where to Use

The MRF171 is recommended for applications where high gain, power output, and reliability are essential. It is commonly used in RF communication systems, radar applications, and industrial RF equipment for enhanced performance.

How to Use

Connect the MRF171 transistor to your RF circuit by wiring the RF IN and RF OUT pins accordingly. Ensure proper power supply connections to VCC and connect the ground pin to the system ground. Control the biasing conditions based on the datasheet recommendations for optimal performance. For detailed usage instructions, refer to the datasheet.

Application Circuit

The application circuit diagram for the MRF171 demonstrates how to integrate the RF transistor into your RF system. It includes connections for RF input, RF output, power supply, and ground to ensure proper functionality and performance.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

MRF170: A similar high-power RF transistor offering comparable performance.
MRF173: An alternative RF transistor with similar characteristics for RF applications.

Complementary

The MRF171 can be complemented by the MRF151G, which provides additional features such as higher gain and efficiency for specific RF applications. Ensure compatibility and performance alignment when selecting complementary components for your RF system.

Frequently Asked Questions

Q: What is the maximum power output of the MRF171?

A: The MRF171 offers a high power output capability, typically specified in the datasheet under specific operating conditions.

Q: Can the MRF171 be used in amateur radio applications?

A: Yes, the MRF171 is suitable for use in amateur radio applications that require high-power RF amplification for signal transmission.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Part Life Cycle Code	Active	ECCN Code	EAR99
Configuration	SINGLE	DS Breakdown Voltage-Min	65 V
Drain Current-Max (Abs) (ID)	4.5 A	Drain Current-Max (ID)	4.5 A
FET Technology	METAL-OXIDE SEMICONDUCTOR	Highest Frequency Band	VERY HIGH FREQUENCY BAND
JESD-30 Code	O-CRFM-F4	Number of Elements	1
Number of Terminals	4	Operating Mode !	ENHANCEMENT MODE
Operating Temperature-Max	200 °C	Package Body Material	CERAMIC, METAL-SEALED COFIRED
Package Shape	ROUND	Package Style	FLANGE MOUNT
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	115 W
Qualification Status !	Not Qualified	Surface Mount !	YES
Terminal Form !	FLAT	Terminal Position	RADIAL
Transistor Element Material	SILICON

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification MRF171 PDF Download

FAQs

What is MRF171?

The MRF171 is a high-frequency, high-power NPN bipolar junction transistor (BJT) designed for use in RF amplifier and oscillator applications. It is commonly used in high-power amplifiers for radio and television transmitters, as well as in industrial and scientific applications.

How Does MRF171 Work?

The MRF171 works by amplifying radio frequency signals with high power and efficiency. It leverages its high-frequency capability to amplify signals in the RF range, enabling the transmission of high-power radio signals across various applications. It is designed to handle high-voltage and high-current requirements typical of RF power amplification.

How Many Pins does MRF171 have and What are the Functions of the Pinout Configuration?

The MRF171 is housed in a 4-lead flange mount package. The pinout configuration includes:

Emitter: The emitter pin, which is typically connected to the ground or chassis.
Base: The base pin, which controls the transistor's switching or amplification action.
Collector: The collector pin, which carries the output current from the transistor.
Flange: The flange pin, used for mounting and thermal management.

What are the Pros and Cons of MRF171?

Pros:

High Power: Capable of handling high power levels in RF applications.
High Frequency: Designed for operation in the RF frequency range.
Reliability: Provides reliable performance in high-power RF amplification systems.
Industry Standard Package: The flange mount package allows for easy integration into existing designs.

Cons:

Heat Dissipation: Due to high-power operation, effective heat management is essential for optimal performance.
Matching Circuitry: May require additional matching circuits for impedance and power transfer optimization.

Are There Any Equivalents/Alternatives to MRF171 for Recommendation?

Some equivalents/alternatives to the MRF171 include:

MRF173: another high-power RF transistor with similar characteristics.
BLF278: a high-frequency power transistor suitable for RF power amplification.
MRF21030: a high-power RF transistor designed for industrial, scientific, and broadcast applications.