MRF136Y
With a focus on radio frequency usageMRF136Y
With a focus on radio frequency usage
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Manufacturer Part # : MRF136Y
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Package/Case: 319B-02
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Brand: Macom
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Product Categories : RF FETs, MOSFETs
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Service & Packaging
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About After Sales Service
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MRF136Y DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
---|---|---|
1 | $64.268 | $64.27 |
200 | $24.870 | $4,974.00 |
500 | $23.997 | $11,998.50 |
1000 | $23.566 | $23,566.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Interested Parts
MRF136Y Details
The MRF136Y is a high-power RF transistor from NXP Semiconductors, designed for use in RF power amplification applications. This transistor offers high efficiency and reliability, making it ideal for demanding RF communication systems. It provides a high gain and power output capability, ensuring optimal performance in RF amplifier circuits.
Pinout
- 1 (Emitter): Emitter Terminal
- 2 (Base): Base Terminal
- 3 (Collector): Collector Terminal
(Tip: For detailed pinout information, please refer to the corresponding datasheet.)
Key Features
- High Power Output: Capable of delivering high RF power output.
- High Gain: Provides high gain for efficient signal amplification.
- Reliable Performance: Ensures reliable operation in RF amplifier circuits.
- Efficient RF Amplification: Designed for high-efficiency RF power amplification.
- Wide Frequency Range: Operates over a wide frequency range for versatile applications.
Application
- RF Power Amplification: Ideal for RF power amplification in communication systems.
- RF Transmitter Systems: Used in RF transmitter systems for boosting signal strength.
- Wireless Communication: Suitable for wireless communication systems requiring high-power RF amplification.
Where to Use
The MRF136Y is recommended for applications that demand high-power RF amplification, such as RF communication systems, transmitters, and wireless communication setups. It is designed to deliver efficient amplification and reliable performance in demanding RF environments.
How to Use
Connect the MRF136Y to your RF amplifier circuit by wiring the emitter, base, and collector terminals as per the circuit design. Ensure proper heat dissipation for high-power operation. Optimize biasing and matching for maximum efficiency and power output. For detailed usage instructions, refer to the datasheet.
Application Circuit
The application circuit diagram for the MRF136Y illustrates how to integrate the RF transistor into your RF power amplifier setup. It includes connections for biasing, input, and output matching networks to ensure proper amplification and signal integrity.
(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)
Equivalents
- BLF278: A comparable high-power RF transistor with similar performance characteristics.
- MRF137: An alternative RF transistor offering equivalent power output and gain.
Complementary
The MRF136Y can be complemented by the MRF148A, which provides even higher RF power output and gain for applications requiring greater amplification capabilities.
When selecting complementary RF transistors, ensure compatibility with your system requirements for optimal performance and efficiency.
Frequently Asked Questions
Q: What is the maximum power output of the MRF136Y?
A: The MRF136Y is capable of delivering high RF power output. For specific power output ratings, refer to the datasheet under recommended operating conditions.
Q: Can the MRF136Y be used in amateur radio applications?
A: Yes, the MRF136Y is suitable for use in amateur radio setups where high-power RF amplification is required for signal transmission.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | RF MOSFET Transistors | RoHS | Details |
Technology | Si | Brand | MACOM |
Product Type ! | RF MOSFET Transistors | Factory Pack Quantity | 20 |
Subcategory | MOSFETs |
FAQs
What is MRF136Y?
The MRF136Y is a high-power NPN silicon bipolar transistor designed for RF power amplification in high-frequency communication systems. It is ideal for applications requiring high power, high gain, and high efficiency, such as broadcast transmitters, radar systems, and RF heating equipment.
How Does MRF136Y Work?
The MRF136Y works by amplifying RF signals with high power and efficiency. It utilizes advanced silicon bipolar transistor technology to deliver high gain and linearity, making it suitable for broadband and multi-band amplification applications. The transistor is designed to operate under high voltage and high current conditions, enabling high-power RF amplification.
How Many Pins does MRF136Y have and What are the Functions of the Pinout Configuration?
The MRF136Y is housed in a bolt-down package. The pinout configuration includes:
- Emitter: Emitter terminal for the transistor.
- Base: Base terminal for the transistor.
- Collector: Collector terminal for the transistor.
- Mounting Flange: Flange for securing the transistor to a heat sink for thermal management.
What are the Pros and Cons of MRF136Y?
Pros:
- High Power: Capable of delivering high power output for RF amplification.
- High Gain: Provides high gain for signal amplification in RF systems.
- High Efficiency: Operates with high efficiency, minimizing power dissipation.
- Broadband Capability: Suitable for broadband and multi-band amplification applications.
Cons:
- Heat Dissipation: Requires effective thermal management due to high power operation.
- Complex Matching Networks: May require complex matching networks for optimal performance in certain applications.
Are There Any Equivalents/Alternatives to MRF136Y for Recommendation?
- The MRF137 from Motorola is a similar high-power NPN transistor suitable for RF applications.
- Alternatives to the MRF136Y include the BLF278 from Ampleon and the SD2931-10 from STMicroelectronics.
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Price details
Prices listed do not include VAT.
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