MMSS8050-H-TP
MMSS8050-H-TP is a high power Bipolar Transistor capable of handling up to 625mW of powerMMSS8050-H-TP
MMSS8050-H-TP is a high power Bipolar Transistor capable of handling up to 625mW of power
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MMSS8050-H-TP DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
---|---|---|
20 | $0.026 | $0.52 |
200 | $0.022 | $4.40 |
600 | $0.019 | $11.40 |
3000 | $0.015 | $45.00 |
9000 | $0.014 | $126.00 |
21000 | $0.013 | $273.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Interested Parts
MMSS8050-H-TP Details
The MMSS8050-H-TP is a high-performance NPN transistor from ON Semiconductor, designed for low-voltage switching and amplification applications. This device features a high current gain and low saturation voltage, making it suitable for various electronic circuits. Housed in a compact SOT-23 package, it is ideal for space-constrained designs.
Pinout
- 1 (B): Base
- 2 (C): Collector
- 3 (E): Emitter
(Tip: For detailed pinout information, please refer to the corresponding datasheet.)
Key Features
- High Current Gain: Offers a high HFE ratio for efficient amplification.
- Low Saturation Voltage: Ensures minimal voltage drop during saturation, improving efficiency.
- Compact Size: Housed in a SOT-23 package for easy integration into space-limited applications.
- Wide Operating Temperature Range: Designed to operate from -55°C to +150°C.
- Multiple Applications: Suitable for switching and amplifying signals in various circuits.
Application
- Signal Amplification: Ideal for amplifying weak signals in audio and radio applications.
- Switching: Suitable for low-voltage switching applications in digital circuits.
- LED Drivers: Commonly used as a driver for low-power LED applications.
Where to Use
The MMSS8050-H-TP is suitable for applications requiring reliable switching and amplification in low-voltage environments. Its compact size and efficiency make it ideal for portable devices, consumer electronics, and battery-operated systems.
How to Use
Connect the MMSS8050-H-TP by wiring the Base (B) pin to your input signal, the Collector (C) pin to the load, and the Emitter (E) pin to ground. Ensure proper biasing of the Base pin to enable switching or amplification based on your design requirements. For detailed usage instructions, refer to the datasheet.
Application Circuit
The application circuit diagram for the MMSS8050-H-TP illustrates how to connect the transistor in a switching or amplifying configuration. It includes necessary biasing and load connections for optimal performance.
(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)
Equivalents
- 2N3904: A similar NPN transistor with comparable performance characteristics.
- BC547: An alternative NPN transistor suitable for general-purpose applications.
Complementary
The MMSS8050-H-TP can be complemented by the MMSS8050P-H-TP, which is a PNP transistor that offers similar specifications and performance, allowing for complementary push-pull configurations in amplification and switching circuits.
When selecting complementary transistors, ensure that their current and voltage ratings align with your specific application requirements.
Frequently Asked Questions
Q: What is the maximum collector current for the MMSS8050-H-TP?
A: The MMSS8050-H-TP can handle a collector current of up to 600mA. For more details, refer to the datasheet for specific operating conditions and limitations.
Q: Can the MMSS8050-H-TP be used in high-frequency applications?
A: While it is optimized for low-voltage applications, the MMSS8050-H-TP is suitable for moderate-frequency switching and amplification. However, check the datasheet for specific frequency response characteristics.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | Bipolar Transistors - BJT | RoHS | Details |
Mounting Style | SMD/SMT | Package / Case | SOT-23-3 |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 25 V | Collector- Base Voltage VCBO | 40 V |
Emitter- Base Voltage VEBO | 5 V | Collector-Emitter Saturation Voltage | 500 mV |
Maximum DC Collector Current | 1.5 A | Pd - Power Dissipation | 300 mW |
Gain Bandwidth Product fT | 100 MHz | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature ! | + 150 C | Brand | Micro Commercial Components (MCC) |
DC Collector/Base Gain hfe Min | 120 | Product Type ! | BJTs - Bipolar Transistors |
Factory Pack Quantity | 3000 | Subcategory | Transistors |
Technology | Si | Unit Weight | 0.000282 oz |
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Price details
Prices listed do not include VAT.
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