MJF18008
NPN Bipolar Power Transistor, rated at 8.0 Amperes and 450 VoltsMJF18008
NPN Bipolar Power Transistor, rated at 8.0 Amperes and 450 Volts
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Manufacturer Part # : MJF18008
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Package/Case: TO-220FP-3
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Brand: Onsemi
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Product Categories : Single Bipolar Transistors
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Series : MJF18
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MJF18008 DataSheet

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Interested Parts
MJF18008 Description
The MJF18008 is an 8.0 A, 450 V NPN Bipolar Power Transistor from Diodes Incorporated, designed for general-purpose and low VCE(sat) applications. This device features a TO-220FP-3 package, making it suitable for compact circuit designs.
Pin Details
The MJF18008 is an 8-pin transistor with the following pin configuration:
- Pin 1: Base
- Pin 2: Collector
- Pin 3: Emitter
- Pin 4: Collector
- Pin 5: Base
- Pin 6: Emitter
- Pin 7: Collector
- Pin 8: Collector
Features
- High Current Handling: Capable of handling up to 8.0 A of current, making it suitable for demanding applications.
- Low VCE(sat): Features a low saturation voltage, reducing power consumption and heat generation.
- Robust Construction: Designed with a robust construction to withstand harsh environmental conditions.
- Compact Package: Available in a compact TO-220FP-3 package for easy integration into electronic circuits.
Applications
The MJF18008 is commonly used in general-purpose and low VCE(sat) applications, such as power supplies, motor control, and audio amplifiers.
Where to Use:
- Power supplies
- Motor control systems
- Audio amplifiers
- Industrial automation systems
Manufacturer
The MJF18008 is manufactured by Diodes Incorporated, a global leader in semiconductor technology. It falls under the category of NPN bipolar power transistors, designed to provide high current handling and low VCE(sat) performance.
Packages
The MJF18008 comes in a compact TO-220FP-3 package, making it suitable for surface-mount technology and through-hole mounting options.
Equivalent Parts of MJF18008
- BTA16-800B: A comparable NPN bipolar power transistor with similar features and performance.
- MJF15008: An alternative NPN bipolar power transistor from Diodes Incorporated that offers equivalent functionality.

Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | Bipolar Transistors - BJT | Transistor Polarity | NPN |
Configuration | Single | Collector- Emitter Voltage VCEO Max | 450 V |
Emitter- Base Voltage VEBO | 9 V | Maximum DC Collector Current | 8 A |
Gain Bandwidth Product fT | 13 MHz | Minimum Operating Temperature | - 65 C |
Maximum Operating Temperature ! | + 150 C | Brand | Diodes Incorporated |
DC Collector/Base Gain hfe Min | 14 | Product Type ! | BJTs - Bipolar Transistors |
Subcategory | Transistors | Technology | Si |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
Prices listed do not include VAT.
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