MJE253G

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Transistors suitable for high power applications

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MJE253G DataSheet

Pricing (USD)

Quantity Unit Price Ext. Price
1 $0.421 $0.42
10 $0.342 $3.42
30 $0.302 $9.06
100 $0.272 $27.20
500 $0.248 $124.00
1000 $0.236 $236.00

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

Interested Parts

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Please submit RFQ for MJE253G or email to us: Email: [email protected], we will contact you in 12 hours.

MJE253G Details

The MJE253G is a high-voltage NPN transistor designed for general-purpose applications including audio amplifiers, switch-mode power supplies, and high-speed switching. With a maximum collector-emitter voltage of 400V and a collector current rating of 15A, this transistor is suitable for various circuit designs and power management applications, providing reliable performance in demanding conditions.

Pinout

  • 1 (C): Collector
  • 2 (B): Base
  • 3 (E): Emitter

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

  • High Voltage Rating: Maximum collector-emitter voltage of 400V allows for use in high-voltage applications.
  • High Current Capacity: Rated for continuous collector current of 15A, enabling robust performance.
  • Fast Switching Speed: Designed for efficient switching applications.
  • Stable Operation: Ensures reliable operation across a wide temperature range.
  • TO-220 Package: Housed in a TO-220 package for effective heat dissipation and easy mounting.

Application

  • Audio Amplifiers: Ideal for use in class AB audio amplifier circuits.
  • Switching Power Supplies: Used in switch-mode power supplies for efficient power conversion.
  • Motor Control: Suitable for controlling motors and other inductive loads.

Where to Use

The MJE253G is suitable for general-purpose switching and amplification applications, particularly where high voltage and current ratings are required. It is commonly used in audio equipment, power supplies, and motor control circuits.

How to Use

Connect the MJE253G in your circuit by appropriately wiring the collector, base, and emitter pins. Ensure proper biasing of the base pin for desired switching operation, and take into account the thermal management of the device. For detailed usage instructions, refer to the datasheet.

Application Circuit

The application circuit diagram for the MJE253G illustrates how to integrate the transistor into a circuit, displaying connections for the collector, base, and emitter to enable effective amplification and switching functions.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

  • MJE2955: A similar high-voltage PNP transistor that can be used in conjunction with the MJE253G for complementary push-pull amplifier configurations.
  • 2N3055: An alternative high-current transistor with comparable performance characteristics.

Complementary

The MJE253G can be complemented by the MJE257G, which is a complementary PNP transistor ideal for push-pull amplifier designs and motor control applications.

When selecting complementary transistors, ensure that their characteristics and ratings are consistent with your circuit requirements for optimal performance.

Frequently Asked Questions

Q: What is the maximum collector-emitter voltage for the MJE253G?

A: The MJE253G has a maximum collector-emitter voltage rating of 400V. For more details, refer to the datasheet for specific operating conditions and limitations.

Q: Can the MJE253G be used for audio applications?

A: Yes, the MJE253G is well-suited for audio amplification applications due to its high current and voltage handling capabilities.

MJE253G

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type TO-225-3 Case Outline 77-09
MSL Type NA MSL Temp (°C) 0
Container Type BLKBX Container Qty. 500
ON Target Y Polarity PNP
Type General Purpose VCE(sat) Max (V) 0.6
IC Cont. (A) 4 VCEO Min (V) 100
VCBO (V) 100 VEBO (V) 7
VBE(sat) (V) 1.8 VBE(on) (V) 1.5
hFE Min 40 hFE Max 180
fT Min (MHz) 40 PTM Max (W) 15
Pricing ($/Unit) $0.2076

FAQs

What is MJE253G?

The MJE253G is a high voltage, high speed NPN bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. It is commonly used in power supplies, audio amplifiers, and motor control circuits.

How Does MJE253G Work?

The MJE253G works as an amplification and switching device, where it can amplify small signals or control larger currents and voltages. It is configured as a three-terminal device, with the base, collector, and emitter allowing for control of current flow and voltage switching.

How Many Pins does MJE253G have and What are the Functions of the Pinout Configuration?

The MJE253G is housed in a TO-225AA package. The pinout configuration includes:

  • Collector (C): This is where the output or the load is connected.
  • Base (B): The input terminal which controls the flow of current between the collector and emitter.
  • Emitter (E): This terminal emits or passes the current from the collector to the emitter.

What are the Pros and Cons of MJE253G?

Pros:

  • High Voltage Capability: Suitable for high voltage applications.
  • High Speed Switching: Enables fast switching operations in various circuits.
  • General Purpose: Versatile application in amplifiers and switching circuits.

Cons:

  • Heat Dissipation: May require heatsinking in high power applications.
  • Voltage and Current Limitations: As with any component, it has limitations in terms of maximum voltage and current handling capabilities.

Are There Any Equivalents/Alternatives to MJE253G for Recommendation?

Equivalents to the MJE253G include the TIP31C and TIP122 transistors, which are also high voltage NPN transistors suitable for general-purpose applications.

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