MG75Q2YS40
75A N-channel Insulated Gate Bipolar Transistor (IGBT) with 1200V Rating, 7-Pin ConfigurationMG75Q2YS40
75A N-channel Insulated Gate Bipolar Transistor (IGBT) with 1200V Rating, 7-Pin Configuration
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Manufacturer Part # : MG75Q2YS40
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Package/Case: Module
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Brand: Toshiba
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Product Categories : Single FETs, MOSFETs
Quality Assurance
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Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
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Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
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About packaging
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MG75Q2YS40 DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Interested Parts
MG75Q2YS40 Description
The MG75Q2YS40 is a power module for 75A,1200V IGBT inverter applications with low VCE(sat) technologies from Toshiba America Electronic Components, designed for reliable and efficient power conversion. This device features superior thermal management, fault tolerance, and compliance with international standards, making it suitable for various industrial-grade inverter applications.
Features
- Superior Thermal Management: Offers advanced heat dissipation capabilities to ensure reliable operation in high-temperature environments.
- Fault Tolerance and Redundancy: Provides robust fault detection and recovery mechanisms to minimize downtime and ensure continuous operation.
- Compliance with International Standards: Meets or exceeds relevant industry standards for safety, performance, and reliability.
- Precision Temperature Sensing: Enables accurate temperature monitoring and control for optimal system performance.
Applications
The MG75Q2YS40 is commonly used in industrial-grade inverter applications that require high-performance power conversion, such as motor drives, renewable energy systems, and grid-tied inverters.
Where to Use:
- Industrial-grade inverter applications
- Motor drives
- Renewable energy systems
- Grid-tied inverters
Manufacturer
The MG75Q2YS40 is manufactured by Toshiba America Electronic Components, a global leader in semiconductor technology. It falls under the category of IGBT modules, which are designed to facilitate efficient and reliable power conversion in various industrial applications.
Packages
The MG75Q2YS40 comes in a package suitable for surface-mount technology, offering a compact and efficient solution for integrating the module into electronic circuits.

Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | No | Rohs Code | No |
Part Life Cycle Code | Obsolete | Pin Count ! | 7 |
ECCN Code | EAR99 | HTS Code ! | 8541.29.00.95 |
Additional Feature ! | HIGH SPEED | Case Connection | ISOLATED |
Collector Current-Max (IC) | 75 A | Collector-Emitter Voltage-Max | 1200 V |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | Fall Time-Max (tf) | 500 ns |
Gate-Emitter Thr Voltage-Max | 6 V | Gate-Emitter Voltage-Max | 20 V |
JESD-30 Code | R-XUFM-X7 | Number of Elements | 2 |
Number of Terminals | 7 | Operating Temperature-Max | 150 °C |
Package Body Material | UNSPECIFIED | Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL | Power Dissipation Ambient-Max | 560 W |
Power Dissipation-Max (Abs) | 560 W | Qualification Status ! | Not Qualified |
Rise Time-Max (tr) | 600 ns | Surface Mount ! | NO |
Terminal Form ! | UNSPECIFIED | Terminal Position | UPPER |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | MOTOR CONTROL |
Transistor Element Material | SILICON | Turn-off Time-Nom (toff) | 800 ns |
Turn-on Time-Nom (ton) | 400 ns | VCEsat-Max | 4 V |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
Prices listed do not include VAT.
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