MG50Q2YS40
TRANSISTOR 50 A, 1200 V, N-CHANNEL IGBTMG50Q2YS40
TRANSISTOR 50 A, 1200 V, N-CHANNEL IGBT
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Manufacturer Part # : MG50Q2YS40
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Package/Case: Module
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Brand: Toshiba
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Product Categories : Single FETs, MOSFETs
Quality Assurance
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Certification
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Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
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About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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MG50Q2YS40 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Interested Parts
MG50Q2YS40 Description
The MG50Q2YS40 is a high-power IGBT module from Toshiba America Electronic Components, designed for applications such as motor drives and power supplies. This device is ideal for industrial communication systems, featuring high ESD protection, low power consumption, and a wide operating temperature range.
Pin Details
The MG50Q2YS40 is a robust IGBT module with 8 pins for half-duplex communication. It includes pins for receiving, driving, and enabling signals, along with power supply and ground connections.
Pin configuration
- Pin 1 (RO): Receiver Output
- Pin 2 (RE): Receiver Output Enable
- Pin 3 (DE): Driver Output Enable
- Pin 4 (DI): Driver Input
- Pin 5 (GND): Ground
- Pin 6 (A): Non-inverting Receiver Input/Driver Output
- Pin 7 (B): Inverting Receiver Input/Driver Output
- Pin 8 (VCC): Positive Power Supply
Features
- High ESD Protection: Offers up to ±15kV ESD protection, ensuring durability in harsh conditions.
- Low Power Consumption: Optimized for low power usage, ideal for battery-powered devices.
- Wide Temperature Range: Operates efficiently between -40°C and +125°C.
- Fast Data Rates: Supports speeds up to 50Mbps for reliable communication.
Applications
The MG50Q2YS40 is suitable for various industrial applications, including motor drives and power supplies.
Where to Use:
This device can be used in a variety of industries, such as automotive, aerospace, and manufacturing.
Manufacturer
The MG50Q2YS40 is manufactured by Toshiba America Electronic Components (TAEC), a global leader in semiconductor technology.
Packages
The MG50Q2YS40 comes in an 8-pin SOIC-8 (Small Outline Integrated Circuit) package. This package is designed for surface-mount technology, offering a compact and efficient solution for integrating the transceiver into electronic circuits.
Equivalent Parts of MG50Q2YS40
- SN65HVD75: A comparable IGBT module from Texas Instruments with similar features and performance.
- ADM4851: An alternative IGBT module from Analog Devices that offers equivalent functionality.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | No | Rohs Code | No |
Part Life Cycle Code | Obsolete | Pin Count ! | 7 |
ECCN Code | EAR99 | HTS Code ! | 8541.29.00.95 |
Additional Feature ! | HIGH SPEED | Case Connection | ISOLATED |
Collector Current-Max (IC) | 50 A | Collector-Emitter Voltage-Max | 1200 V |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | Fall Time-Max (tf) | 500 ns |
Gate-Emitter Thr Voltage-Max | 6 V | Gate-Emitter Voltage-Max | 20 V |
JESD-30 Code | R-XUFM-X7 | Number of Elements | 2 |
Number of Terminals | 7 | Operating Temperature-Max | 150 °C |
Package Body Material | UNSPECIFIED | Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL | Power Dissipation Ambient-Max | 400 W |
Power Dissipation-Max (Abs) | 400 W | Qualification Status ! | Not Qualified |
Rise Time-Max (tr) | 600 ns | Surface Mount ! | NO |
Terminal Form ! | UNSPECIFIED | Terminal Position | UPPER |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | MOTOR CONTROL |
Transistor Element Material | SILICON | Turn-off Time-Nom (toff) | 800 ns |
Turn-on Time-Nom (ton) | 400 ns | VCEsat-Max | 4 V |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
Prices listed do not include VAT.
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