MG50Q2YS40

Effective Inventory3,164

TRANSISTOR 50 A, 1200 V, N-CHANNEL IGBT

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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MG50Q2YS40 DataSheet

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MG50Q2YS40 Description

The MG50Q2YS40 is a high-power IGBT module from Toshiba America Electronic Components, designed for applications such as motor drives and power supplies. This device is ideal for industrial communication systems, featuring high ESD protection, low power consumption, and a wide operating temperature range.

Pin Details

The MG50Q2YS40 is a robust IGBT module with 8 pins for half-duplex communication. It includes pins for receiving, driving, and enabling signals, along with power supply and ground connections.

Pin configuration

  • Pin 1 (RO): Receiver Output
  • Pin 2 (RE): Receiver Output Enable
  • Pin 3 (DE): Driver Output Enable
  • Pin 4 (DI): Driver Input
  • Pin 5 (GND): Ground
  • Pin 6 (A): Non-inverting Receiver Input/Driver Output
  • Pin 7 (B): Inverting Receiver Input/Driver Output
  • Pin 8 (VCC): Positive Power Supply

Features

  • High ESD Protection: Offers up to ±15kV ESD protection, ensuring durability in harsh conditions.
  • Low Power Consumption: Optimized for low power usage, ideal for battery-powered devices.
  • Wide Temperature Range: Operates efficiently between -40°C and +125°C.
  • Fast Data Rates: Supports speeds up to 50Mbps for reliable communication.

Applications

The MG50Q2YS40 is suitable for various industrial applications, including motor drives and power supplies.

Where to Use:

This device can be used in a variety of industries, such as automotive, aerospace, and manufacturing.

Manufacturer

The MG50Q2YS40 is manufactured by Toshiba America Electronic Components (TAEC), a global leader in semiconductor technology.

Packages

The MG50Q2YS40 comes in an 8-pin SOIC-8 (Small Outline Integrated Circuit) package. This package is designed for surface-mount technology, offering a compact and efficient solution for integrating the transceiver into electronic circuits.

Equivalent Parts of MG50Q2YS40

  • SN65HVD75: A comparable IGBT module from Texas Instruments with similar features and performance.
  • ADM4851: An alternative IGBT module from Analog Devices that offers equivalent functionality.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code No Rohs Code No
Part Life Cycle Code Obsolete Pin Count ! 7
ECCN Code EAR99 HTS Code ! 8541.29.00.95
Additional Feature ! HIGH SPEED Case Connection ISOLATED
Collector Current-Max (IC) 50 A Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE Fall Time-Max (tf) 500 ns
Gate-Emitter Thr Voltage-Max 6 V Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7 Number of Elements 2
Number of Terminals 7 Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED Package Shape RECTANGULAR
Package Style FLANGE MOUNT Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Power Dissipation Ambient-Max 400 W
Power Dissipation-Max (Abs) 400 W Qualification Status ! Not Qualified
Rise Time-Max (tr) 600 ns Surface Mount ! NO
Terminal Form ! UNSPECIFIED Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application MOTOR CONTROL
Transistor Element Material SILICON Turn-off Time-Nom (toff) 800 ns
Turn-on Time-Nom (ton) 400 ns VCEsat-Max 4 V

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification MG50Q2YS40 PDF Download

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