M29W160EB70N6E

Name: M29W160EB70N6E
Brand: Micron
Rating: 4.5 (10 reviews)
Author: Lisleapex

STMicroelectronics M29W160EB70N6E: Parallel 16Mbit Flash Memory

3,395 Effective Inventory

M29W160EB70N6E

Effective Inventory3,395

STMicroelectronics M29W160EB70N6E: Parallel 16Mbit Flash Memory

Manufacturer Part # : M29W160EB70N6E
Package/Case: SOP-48
Brand: Micron
Product Categories : Memory
Series : M29W160

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About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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M29W160EB70N6E DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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M29W160EB70N6E Details

The M29W160EB70N6E is a flash memory device from Micron Technology, designed for high-performance applications requiring nonvolatile storage with low power consumption and fast access times. This device is ideal for consumer electronics, industrial control systems, automotive electronics, and networking devices.

Key Features

Data Storage Capacity: 16 Megabits(2M x 8-bit/1M x 16-bit)
Low Power Consumption: Designed for low power operation, making it suitable for battery-powered applications.
Fast Access Time: OPERATES AT A FAST ACCESS TIME OF 70ns

Applications

Consumer Electronics: Used in consumer electronics requiring nonvolatile storage with high reliability and performance.
Industrial Control Systems: Suitable for industrial control systems where reliable data storage is essential.
Automotive Electronics: Used in automotive electronics where low power consumption, fast access time, and high reliability are critical.

Where to Use

The M29W160EB70N6E is suitable for various applications requiring nonvolatile storage with low power consumption and fast access times. It can be used in consumer electronics, industrial control systems, automotive electronics, and networking devices.

Application Circuit

The application circuit diagram for the M29W160EB70N6E illustrates how to connect the device to a system requiring nonvolatile storage. It includes connections for power supply, ground, and data lines, ensuring proper operation and reliable data transmission.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Complementary

The M29W160EB70N6E can be complemented by other devices from Micron Technology offering similar features and performance for specific application requirements.

Frequently Asked Questions

Q: What is the data storage capacity of the M29W160EB70N6E?

A: The M29W160EB70N6E has a data storage capacity of 16 Megabits (2M x 8-bit/1M x 16-bit).

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category !	NOR Flash	RoHS	Details
Mounting Style	SMD/SMT	Package / Case	TSOP-48
Series	M29W	Memory Size !	16 Mbit
Supply Voltage - Min	2.7 V	Supply Voltage - Max	3.6 V
Active Read Current - Max	10 mA	Interface Type	Parallel
Organization	2 M x 8/1 M x 16	Data Bus Width	8 bit/16 bit
Timing Type	Asynchronous	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature !	+ 85 C	Architecture	Block Erase
Brand	STMicroelectronics	Memory Type !	NOR
Moisture Sensitive	Yes	Product Type !	NOR Flash
Speed	70 ns	Standard	Common Flash Interface (CFI)
Factory Pack Quantity	96	Subcategory	Memory & Data Storage

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification M29W160EB70N6E PDF Download

FAQs

What is M29W160EB70N6E?

The M29W160EB70N6E is a 16-megabit (2M x 8 or 1M x 16) non-volatile Flash memory chip manufactured by STMicroelectronics. It is commonly used in various embedded systems, consumer electronics, and automotive applications for data storage, code execution, and firmware updates.

How Does M29W160EB70N6E Work?

The M29W160EB70N6E works by storing data in a non-volatile manner, meaning that the data is retained even when the power is turned off. It utilizes Flash memory technology to enable read, write, and erase operations, making it suitable for storing program code, configuration parameters, and other critical data in electronic systems.

How Many Pins does M29W160EB70N6E have and What are the Functions of the Pinout Configuration?

The M29W160EB70N6E is housed in a 48-ball Fortified BGA (Ball Grid Array) package. The pinout configuration includes:

Addresses (Ax0 - Ax18): Address input pins for selecting memory locations.
CE#: Chip Enable input for activating the memory chip.
CE# or RESET#: Additional Chip Enable or Reset input pin.
OE#: Output Enable input for enabling data output.
WE#/BYTE#/ACC: Write Enable or Byte/Access Mode control input.
DATA (DQ0 - DQ15): Data input/output pins.
VCC: Power supply pin.
GND: Ground pin.
RY/BY#: Ready/Busy output pin indicating the status of the memory operation.

What are the Pros and Cons of M29W160EB70N6E?

Pros:

High Capacity: Offers 16 megabits of non-volatile storage space for program and data storage.
Non-Volatile Memory: Retains stored data even when power is removed, ensuring data integrity.
High-Speed Read and Write Operations: Enables fast access to stored data and efficient program execution.
Compact Package: The 48-ball BGA package is space-efficient, suitable for compact designs.

Cons:

Complex Interface: Requires careful handling of control signals and voltage levels for proper operation.
Cost: The high capacity and non-volatile nature of the memory may result in a higher cost compared to volatile memory alternatives.
Board Layout: The BGA package may require specific layout considerations and manufacturing processes.

Are There Any Equivalents/Alternatives to M29W160EB70N6E for Recommendation?

The W25Q128JV from Winbond is a similar 16-megabit Flash memory chip with additional features.
Alternatives to the M29W160EB70N6E include the S29GL128P from Cypress and the AM29LV160 from AMD.