M29DW256G70NF6E
256 Megabit Parallel NOR FlashM29DW256G70NF6E
256 Megabit Parallel NOR Flash
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M29DW256G70NF6E DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
---|---|---|
1 | $16.974 | $16.97 |
200 | $6.772 | $1,354.40 |
576 | $6.547 | $3,771.07 |
1152 | $6.435 | $7,413.12 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Interested Parts
M29DW256G70NF6E Details
The M29DW256G70NF6E is a 256Mb (32M x 8) NOR Flash Memory from STMicroelectronics, offering high-density non-volatile storage for various embedded applications. This flash memory provides fast read and write access times, making it suitable for program storage, firmware updates, and data logging. It is housed in a compact package, ideal for space-constrained designs requiring reliable and efficient memory storage.
Pinout
- 1 (CE#): Chip Enable
- 2 (A0): Address Input
- 3 (A1): Address Input
- 4 (A2): Address Input
- 5 (VCC): Positive Power Supply
- 6 (GND): Ground
- 7 (IO0): Data Input/Output
- 8 (IO1): Data Input/Output
- 9 (RP#): Ready/Busy Output
- 10 (W#): Write Enable
- 11 (BYTE#): Byte/Word Selection
- 12-21: Address Inputs
(Tip: For detailed pinout information, please refer to the corresponding datasheet.)
Key Features
- High-Density Storage: Offers 256Mb of non-volatile storage space.
- Fast Access Times: Provides quick read and write access for efficient data transfer.
- Compact Package: Housed in a space-saving package for easy integration into designs.
- Reliable Performance: Ensures data integrity and longevity for critical applications.
- Wide Operating Voltage: Supports a wide voltage range for versatile compatibility.
Application
- Embedded Systems: Ideal for storing program code and data in embedded systems.
- Firmware Updates: Used for updating firmware in various electronic devices.
- Data Logging: Suitable for logging data in monitoring and control systems.
Where to Use
The M29DW256G70NF6E is perfect for applications requiring high-density non-volatile storage, such as embedded systems, consumer electronics, and industrial equipment. It is well-suited for storing firmware, program code, and data logs reliably and efficiently.
How to Use
Integrate the M29DW256G70NF6E into your circuit by connecting the necessary address, data, and control lines as per the datasheet recommendations. Ensure proper power supply connections and follow the timing specifications for read and write operations. Refer to the datasheet for detailed usage instructions.
Application Circuit
The application circuit diagram for the M29DW256G70NF6E demonstrates how to connect the flash memory to a microcontroller or system bus. It includes connections for power, address lines, data lines, and control signals to enable seamless data storage and retrieval operations.
(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)
Equivalents
- S29GL256S: A comparable NOR flash memory with similar performance characteristics.
- W25Q256FV: An alternative flash memory offering equivalent storage capacity and speed.
Complementary
The M29DW256G70NF6E can be complemented by the M29DW128G70NF6E, which provides half the storage capacity while maintaining similar features. This combination offers flexibility in storage options for different application requirements.
When considering complementary components, ensure compatibility and synchronization in terms of data transfer rates and interface protocols for seamless operation.
Frequently Asked Questions
Q: What is the maximum read speed of the M29DW256G70NF6E?
A: The M29DW256G70NF6E offers a maximum read speed of XX MB/s. Please refer to the datasheet for specific timing and performance details.
Q: Is the M29DW256G70NF6E suitable for automotive applications?
A: While not specifically designed for automotive use, the M29DW256G70NF6E can be employed in non-critical automotive systems where high-density storage is required.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | NOR Flash | Mounting Style | SMD/SMT |
Package / Case | TSOP-56 | Series | M29DW |
Memory Size ! | 256 Mbit | Supply Voltage - Min | 2.7 V |
Supply Voltage - Max | 3.6 V | Active Read Current - Max | 10 mA |
Interface Type | Parallel | Organization | 16 M x 16 |
Data Bus Width | 16 bit | Timing Type | Asynchronous |
Minimum Operating Temperature | - 40 C | Maximum Operating Temperature ! | + 85 C |
Brand | Micron | Memory Type ! | NOR |
Product Type ! | NOR Flash | Speed | 70 ns |
Standard | Common Flash Interface (CFI) | Factory Pack Quantity | 576 |
Subcategory | Memory & Data Storage | Type | Boot Block |
FAQs
What is M29DW256G70NF6E?
The M29DW256G70NF6E is a 256Mb (32M x 8) parallel NOR flash memory device manufactured by STMicroelectronics. It is designed for code storage applications in embedded systems, telecommunications, automotive, and consumer electronics.
How Does M29DW256G70NF6E Work?
The M29DW256G70NF6E operates as a non-volatile memory device that stores program code for microcontrollers and other embedded systems. It utilizes a parallel interface for high-speed data transfers and features a split-gate design for reliable data retention.
How Many Pins does M29DW256G70NF6E have and What are the Functions of the Pinout Configuration?
The M29DW256G70NF6E is housed in a 48-pin TSOP package. The pinout configuration includes:
- A0-A18: Address input pins for memory addressing.
- DQ0-DQ15: Data input/output pins for parallel data transfer.
- CE: Chip Enable for device selection.
- WE: Write Enable for write operations.
- OE: Output Enable for read operations.
- RY/BY: Ready/Busy pin for operation status.
- RESET: Reset pin for device initialization.
- VCC, GND: Power supply and ground pins, respectively.
What are the Pros and Cons of M29DW256G70NF6E?
Pros:
- High Capacity: Offers 256Mb of memory storage for large code storage requirements.
- Parallel Interface: Enables high-speed data transfers between the memory and the microcontroller.
- Reliable Performance: Features a split-gate design for robust data retention and endurance.
- Wide Application Range: Suitable for various embedded systems in different industries.
Cons:
- Complex Interface: Requires proper handling of address and data lines for correct operation.
- Power Consumption: Consumes power during read and write operations, impacting battery-powered devices.
- Package Size: The 48-pin TSOP package may require more board space compared to smaller form factors.
Are There Any Equivalents/Alternatives to M29DW256G70NF6E for Recommendation?
- The S29GL256P from Cypress Semiconductor is a similar 256Mb parallel NOR flash memory device.
- Alternatives to the M29DW256G70NF6E include the W25Q256JV from Winbond and the AM29LV256ML from AMD.
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Price details
Prices listed do not include VAT.
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