KM416C256BJ-6

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kilobit SRAM for data-intensive application

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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

Shipping & Payment

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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KM416C256BJ-6 DataSheet

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Please submit RFQ for KM416C256BJ-6 or email to us: Email: [email protected], we will contact you in 12 hours.

KM416C256BJ-6 Description

The KM416C256BJ-6 is a 256Kx16 bit high-speed CMOS dynamic RAM chip from Samsung Semiconductor, designed for various industrial and consumer applications. This device features fast access time of 60ns, low power consumption in standby mode, fully static operation, and a plastic SOJ package.

Pin Details

The KM416C256BJ-6 is a 40-pin SOJ (Small Outline J-Lead) package with the following pin configuration:

  • Pin 1-7: Address Inputs
  • Pin 8-15: Data Inputs
  • Pin 16-23: Data Outputs
  • Pin 24-31: Chip Selects
  • Pin 32-39: Control Signals (WE, OE, CE)
  • Pin 40: Ground

Features

  • Fast Access Time: The KM416C256BJ-6 features a fast access time of 60ns for efficient data transfer.
  • Low Power Consumption: This device consumes low power in standby mode, making it suitable for battery-powered devices and energy-efficient systems.
  • Fully Static Operation: The KM416C256BJ-6 operates fully statically, eliminating the need for refresh cycles and reducing power consumption.
  • Industrial Temperature Range: This device is designed to operate within an industrial temperature range of -40°C to 85°C, making it suitable for various industrial applications.

Applications

The KM416C256BJ-6 is suitable for a wide range of applications, including embedded systems, industrial control systems, and consumer electronics.

Where to Use:

  • Embedded Systems: The KM416C256BJ-6 can be used in various embedded systems, such as automotive systems, medical devices, and industrial control systems.
  • Industrial Control Systems: This device is suitable for use in industrial control systems, including process control systems, automation systems, and robotics.
  • Consumer Electronics: The KM416C256BJ-6 can be used in various consumer electronics applications, such as digital cameras, smartphones, and gaming consoles.

Manufacturer

The KM416C256BJ-6 is manufactured by Samsung Semiconductor, a leading global provider of memory and storage solutions.

Packages

The KM416C256BJ-6 comes in a 40-pin SOJ (Small Outline J-Lead) package, which is designed for surface-mount technology and offers a compact and efficient solution for integrating the device into electronic circuits.

Equivalent Parts of KM416C256BJ-6

  • Samsung K4S51232F: A comparable DRAM chip from Samsung Semiconductor with similar features and performance.
  • Micron MT48LC8M16A2: An alternative DRAM chip from Micron Technology that offers equivalent functionality.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code No Part Life Cycle Code Obsolete
Part Package Code SOJ Pin Count ! 40
ECCN Code EAR99 HTS Code ! 8542.32.00.02
Access Mode ! FAST PAGE Access Time-Max 60 ns
Additional Feature ! RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH I/O Type COMMON
JESD-30 Code R-PDSO-J40 JESD-609 Code e0
Length 26.04 mm Memory Density 4194304 bit
Memory IC Type FAST PAGE DRAM Memory Width 16
Number of Functions 1 Number of Ports ! 1
Number of Terminals 40 Number of Words 262144 words
Number of Words Code 256000 Operating Mode ! ASYNCHRONOUS
Operating Temperature-Max 70 °C Organization 256KX16
Output Characteristics 3-STATE Package Body Material PLASTIC/EPOXY
Package Code SOJ Package Equivalence Code SOJ40,.44
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Power Supplies ! 5 V Qualification Status ! Not Qualified
Refresh Cycles 512 Seated Height-Max 3.76 mm
Self Refresh NO Standby Current-Max 0.001 A
Supply Current-Max 0.09 mA Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V Supply Voltage-Nom (Vsup) 5 V
Surface Mount ! YES Technology CMOS
Temperature Grade ! COMMERCIAL Terminal Finish TIN LEAD
Terminal Form ! J BEND Terminal Pitch ! 1.27 mm
Terminal Position DUAL Width 10.16 mm

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification KM416C256BJ-6 PDF Download

FAQs

What is KM416C256BJ-6?

The KM416C256BJ-6 is a 256K x 16 bit (4M-bit) CMOS dynamic random access memory (DRAM) chip produced by Samsung. It is designed for use in various electronic devices, including computer systems, communication equipment, and consumer electronics.

How Does KM416C256BJ-6 Work?

The KM416C256BJ-6 works as a memory storage component by storing digital data in a matrix of capacitors. It utilizes a refresh mechanism to maintain the stored data, and it communicates with the external system through address and data lines. The DRAM chip needs periodic refresh cycles to prevent data loss, and it operates at high speeds to provide fast access to stored information.

How Many Pins does KM416C256BJ-6 have and What are the Functions of the Pinout Configuration?

The KM416C256BJ-6 is housed in a 44-pin SOJ (Small Outline J-lead) package. The pinout configuration includes:

  • Vcc: Power supply pin.
  • Vss: Ground pin.
  • Address Pins (A0-A11): Inputs for memory address selection.
  • Data Pins (DQ0-DQ15): Bi-directional data input/output pins.
  • Control Pins (RAS, CAS, WE): Control signals for row address strobe, column address strobe, and write enable.
  • OE, WE: Output enable and write enable control pins.

What are the Pros and Cons of KM416C256BJ-6?

Pros:

  • High Density: Offers a large storage capacity in a compact form factor.
  • Fast Access Time: Provides quick access to stored data for efficient operation.
  • Low Power Consumption: Operates with low power requirements, suitable for portable devices.
  • Industry Standard: Compatible with common memory interfaces and standards.
  • Cost-Effective: Provides a good balance of capacity and cost for memory storage needs.

Cons:

  • Refresh Overhead: Requires periodic refreshing of data, demanding additional system resources.
  • Complex Control: Involves complex control and timing considerations for interfacing with the memory system.
  • Noisy Environment Sensitivity: Susceptible to noise and signal integrity issues in certain environments.

Are There Any Equivalents/Alternatives to KM416C256BJ-6 for Recommendation?

  • The MT4C4256 from Micron Technology is a comparable 256K x 16 DRAM chip.
  • Alternatives to the KM416C256BJ-6 include the HYB514256B from Infineon and the M5M5256DP from Mitsubishi Electric.

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