K6X8016T3B-TF55

Effective Inventory5,139

Standard SRAM, 512KX16, 55ns, CMOS, PDSO44

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All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

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Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

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About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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K6X8016T3B-TF55 DataSheet

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Please submit RFQ for K6X8016T3B-TF55 or email to us: Email: [email protected], we will contact you in 12 hours.

K6X8016T3B-TF55 Description

The K6X8016T3B-TF55 is a 512Mb DDR3 SDRAM from Samsung, designed for high-performance and high-reliability applications that require fast and efficient memory storage and access. This device features a x16 organization, operates at a maximum frequency of 1333MHz, and has a supply voltage of 1.5V.

Pin Details

The K6X8016T3B-TF55 is a low-power DDR3 SDRAM with 96 pins for dual in-line memory module (DIMM) packaging. It includes pins for data input/output, address inputs, and control signals, along with power supply and ground connections.

Features

  • 512Mb Capacity: Offers high storage capacity for demanding applications.
  • x16 Organization: Provides fast and efficient memory access.
  • 1333MHz Frequency: Enables high-speed data transfer and processing.
  • 1.5V Supply Voltage: Ensures reliable operation across a wide range of power supplies.
  • Low Power Consumption: Optimized for low power usage, ideal for battery-powered devices.

Applications

The K6X8016T3B-TF55 is suitable for various applications that require high-performance and high-reliability memory storage, such as industrial control systems, consumer electronics, telecommunications equipment, and networking devices.

Where to Use:

  • Industrial control systems
  • Consumer electronics
  • Telecommunications equipment
  • Networking devices

Manufacturer

The K6X8016T3B-TF55 is manufactured by Samsung, a global leader in semiconductor technology. It falls under the category of DDR3 SDRAMs, which are designed to provide high-performance and high-reliability memory storage for demanding applications.

Packages

The K6X8016T3B-TF55 comes in a 96-pin DIMM package, designed for surface-mount technology, offering a compact and efficient solution for integrating the SDRAM into electronic circuits.

Equivalent Parts of K6X8016T3B-TF55

  • K4X8D2136E1-DC50: A comparable DDR3 SDRAM from Samsung with similar features and performance.
  • Micron MT41J512M8AH-125: An alternative DDR3 SDRAM that offers equivalent functionality.
K6X8016T3B-TF55

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code No Rohs Code No
Part Life Cycle Code Obsolete ECCN Code 3A991.B.2.A
HTS Code ! 8542.32.00.41 Access Time-Max 55 ns
I/O Type COMMON JESD-30 Code R-PDSO-G44
JESD-609 Code e0 Memory Density 8388608 bit
Memory IC Type STANDARD SRAM Memory Width 16
Moisture Sensitivity Level 3 Number of Terminals 44
Number of Words 524288 words Number of Words Code 512000
Operating Mode ! ASYNCHRONOUS Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C Organization 512KX16
Output Characteristics 3-STATE Package Body Material PLASTIC/EPOXY
Package Code TSOP Package Equivalence Code TSOP44,.46,32
Package Shape RECTANGULAR Package Style SMALL OUTLINE, THIN PROFILE
Parallel/Serial PARALLEL Peak Reflow Temperature (Cel) 240
Power Supplies ! 3.3 V Qualification Status ! Not Qualified
Standby Current-Max 0.000015 A Standby Voltage-Min 1.5 V
Supply Current-Max 0.045 mA Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount ! YES Technology CMOS
Temperature Grade ! INDUSTRIAL Terminal Finish TIN LEAD
Terminal Form ! GULL WING Terminal Pitch ! 0.8 mm
Terminal Position DUAL

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification K6X8016T3B-TF55 PDF Download

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