K6X1008C2D-GF55

Name: K6X1008C2D-GF55
Brand: Samsung Electro-Mechanics
Rating: 4.5 (10 reviews)
Author: Lisleapex

Standard SRAM, 128KX8, 55ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32

5,129 Effective Inventory

K6X1008C2D-GF55

Effective Inventory5,129

Standard SRAM, 128KX8, 55ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32

Manufacturer Part # : K6X1008C2D-GF55
Package/Case: SOP-32
Brand: Samsung Electro-Mechanics
Product Categories : Memory

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All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

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Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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K6X1008C2D-GF55 DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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K6X1008C2D-GF55 Description

The K6X1008C2D-GF55 is an advanced and reliable memory chip designed for high-performance applications, featuring 1Mx1 Low Power CMOS Static RAM with a fast access time of 55ns. This memory chip is organized as 128K x 8-bit and operates at a voltage range of 2.7V to 3.6V.

Pin Details

The K6X1008C2D-GF55 has a 32-pin TSOP-II package, making it suitable for compact circuit designs.

Features

K6X1008C2D-GF55 is a 1Mx1 Low Power CMOS Static RAM
It operates at a voltage range of 2.7V to 3.6V
It has a fast access time of 55ns
This memory chip is organized as 128K x 8-bit
It is housed in a 32-pin TSOP-II package

Applications

The K6X1008C2D-GF55 is commonly used in electronic devices such as laptops, smartphones, digital cameras, and networking equipment.

Where to Use:

Laptops
Smartphones
Digital cameras
Networking equipment

Manufacturer

The K6X1008C2D-GF55 is manufactured by Samsung Semiconductor, a global leader in semiconductor technology.

Packages

The K6X1008C2D-GF55 comes in a 32-pin TSOP-II package, designed for surface-mount technology and offering a compact and efficient solution for integrating the memory chip into electronic circuits.

Equivalent Parts of K6X1008C2D-GF55

Samsung K4B2G1046Q-BC50: A comparable memory chip with similar features and performance.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code	No	Part Life Cycle Code	Obsolete
Part Package Code	SOIC	Pin Count !	32
ECCN Code	EAR99	HTS Code !	8542.32.00.41
Access Time-Max	55 ns	I/O Type	COMMON
JESD-30 Code	R-PDSO-G32	JESD-609 Code	e0
Length	20.47 mm	Memory Density	1048576 bit
Memory IC Type	STANDARD SRAM	Memory Width	8
Number of Functions	1	Number of Terminals	32
Number of Words	131072 words	Number of Words Code	128000
Operating Mode !	ASYNCHRONOUS	Operating Temperature-Max	85 °C
Operating Temperature-Min	-40 °C	Organization	128KX8
Output Characteristics	3-STATE	Package Body Material	PLASTIC/EPOXY
Package Code	SOP	Package Equivalence Code	SOP32,.56
Package Shape	RECTANGULAR	Package Style	SMALL OUTLINE
Parallel/Serial	PARALLEL	Power Supplies !	5 V
Qualification Status !	Not Qualified	Seated Height-Max	3 mm
Standby Current-Max	0.00001 A	Standby Voltage-Min	2 V
Supply Current-Max	0.025 mA	Supply Voltage-Max (Vsup)	5.5 V
Supply Voltage-Min (Vsup)	4.5 V	Supply Voltage-Nom (Vsup)	5 V
Surface Mount !	YES	Technology	CMOS
Temperature Grade !	INDUSTRIAL	Terminal Finish	TIN LEAD
Terminal Form !	GULL WING	Terminal Pitch !	1.27 mm
Terminal Position	DUAL	Width	11.43 mm

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification K6X1008C2D-GF55 PDF Download

FAQs

What is K6X1008C2D-GF55?

The K6X1008C2D-GF55 is a 128K x 8-bit high-speed CMOS static RAM (SRAM) designed by Samsung. It is commonly used in various electronic devices and systems that require fast and reliable data storage and retrieval.

How Does K6X1008C2D-GF55 Work?

The K6X1008C2D-GF55 operates as a static RAM module, providing high-speed access to stored data. It stores data in a non-volatile manner, retaining information as long as power is supplied. The SRAM offers fast read and write operations, making it suitable for applications demanding quick data access.

How Many Pins does K6X1008C2D-GF55 have and What are the Functions of the Pinout Configuration?

The K6X1008C2D-GF55 is housed in a 32-pin 300-mil SOJ (Small Outline J-leaded) package. The pinout configuration includes:

VCC: Power supply pin.
GND: Ground pin.
Address Inputs (A0-A16): Address lines for selecting memory locations.
Chip Enable (CE1, CE2): Chip enable pins for activating the memory chip.
Write Enable (WE): Write enable pin for initiating write operations.
Output Enable (OE): Output enable pin for enabling data outputs.
Data Inputs/Outputs (I/O0-I/O7): Data input and output lines.

What are the Pros and Cons of K6X1008C2D-GF55?

Pros:

Fast Access Time: Offers high-speed access to stored data.
Non-Volatile Storage: Retains data without the need for constant power supply.
Reliability: Provides reliable data storage and retrieval capabilities.
Compact Form Factor: Comes in a space-efficient Small Outline J-leaded package.
Versatility: Suitable for a wide range of applications requiring fast and efficient data handling.

Cons:

Power Consumption: May consume more power compared to low-power memory technologies.
Cost: SRAM modules like the K6X1008C2D-GF55 may be more expensive than alternative memory types.
Limited Storage Capacity: Offers a specific amount of data storage capacity (128K x 8 bits).

Are There Any Equivalents/Alternatives to K6X1008C2D-GF55 for Recommendation?

The CY62128EV30LL-45ZSXI from Cypress is a similar 128K x 8-bit SRAM with low power consumption.
Alternatives to the K6X1008C2D-GF55 include the AS6C1008-55ZIN from Alliance Memory and the IS61C1024-15JI from ISSI.