K6R4016V1D-UI10

Name: K6R4016V1D-UI10
Brand: Samsung Electro-Mechanics
Rating: 4.5 (10 reviews)
Author: Lisleapex

Lead-free TSOP2-44 package

7,723 Effective Inventory

K6R4016V1D-UI10

Effective Inventory7,723

Lead-free TSOP2-44 package

Manufacturer Part # : K6R4016V1D-UI10
Package/Case: TSOP-II
Part Status : Discontinued
Brand: Samsung Electro-Mechanics
Product Categories : Memory

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All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

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About Shipping

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Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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K6R4016V1D-UI10 DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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K6R4016V1D-UI10 Details

GENERAL DESCRIPTIONThe K6R4016V1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016V1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte access by data byte control(UB, LB). The device is fabricated using SAMSUNG¢s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R4016V1D is packaged in a 400mil 44-pin plastic SOJ or TSOP(II) forward or 48 TBGA.FEATURES• Fast Access Time 8,10ns(Max.)• Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) 1.2mA(Max.)L-Ver. only. Operating K6R4016V1D-08 : 80mA(Max.) K6R4016V1D-10 : 65mA(Max.)• Single 3.3 ±0.3V Power Supply• TTL Compatible Inputs and Outputs• Fully Static Operation- No Clock or Refresh required• Three State Outputs• 2V Minimum Data Retention: L-Ver. only.• Center Power/Ground Pin Configuration• Data Byte Control : LB : I/O1~ I/O8, UB : I/O9~ I/O16• Standard Pin Configuration K6R4016V1D-J : 44-SOJ-400 K6R4016V1D-T : 44-TSOP2-400BF K6R4016V1D-E : 48-TBGA with 0.75 Ball pitch (7mm X 9mm)• Operating in Commercial and Industrial Temperature range.

Key Features

Fast Access Time 8,10ns(Max.)
Low Power Dissipation
Standby (TTL) : 20mA(Max.)
(CMOS) : 5mA(Max.)
1.2mA(Max.)L-Ver. only.
Operating K6R4016V1D-08 : 80mA(Max.)
K6R4016V1D-10 : 65mA(Max.)
Single 3.3 ±0.3V Power Supply
TTL Compatible Inputs and Outputs
Fully Static Operation
- No Clock or Refresh required
Three State Outputs
2V Minimum Data Retention: L-Ver. only.
Center Power/Ground Pin Configuration
Data Byte Control : LB : I/O1~ I/O8, UB : I/O9~ I/O16
Standard Pin Configuration
K6R4016V1D-J : 44-SOJ-400
K6R4016V1D-T : 44-TSOP2-400BF
K6R4016V1D-E : 48-TBGA with 0.75 Ball pitch (7mm X 9mm)
Operating in Commercial and Industrial Temperature range.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer

SAMSUNG

Product Category !

IC Chips

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification K6R4016V1D-UI10 PDF Download

FAQs

What is K6R4016V1D-UI10?

The K6R4016V1D-UI10 is a 4Mx16 bit dynamic random access memory (DRAM) integrated circuit produced by Samsung. It is commonly used in various electronic devices for storing temporary data that needs to be accessed quickly.

How Does K6R4016V1D-UI10 Work?

The K6R4016V1D-UI10 works by storing data in a memory cell that requires periodic refreshing to maintain the data. It uses a combination of row and column addresses to locate and access specific data stored in the memory array. The device operates at high speeds to provide fast access times for read and write operations.

How Many Pins does K6R4016V1D-UI10 have and What are the Functions of the Pinout Configuration?

The K6R4016V1D-UI10 is typically housed in a 44-pin TSOP (Thin Small Outline Package) configuration. The pinout configuration includes:

VDD, VSS: Power supply and ground pins, respectively.
Address Pins: Used for specifying the row and column addresses for data access.
Data Pins: Input/output pins for transferring data to and from the memory array.
Control Pins: Includes pins for chip enable, write enable, output enable, and clock signals.

What are the Pros and Cons of K6R4016V1D-UI10?

Pros:

High Density: Offers a large memory capacity in a compact package.
Fast Access Time: Operates at high speeds for quick data access.
Reliable: Provides stable performance for data storage applications.
Industry Standard: Produced by a reputable manufacturer, ensuring quality and compatibility.

Cons:

Power Consumption: DRAMs can consume more power compared to non-volatile memory types.
Refresh Requirement: Requires periodic refreshing to maintain stored data.
Volatility: Data is lost when power is removed, necessitating backup measures for critical data.