K6R4016V1D-UI10
Lead-free TSOP2-44 packageK6R4016V1D-UI10
Lead-free TSOP2-44 package
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Manufacturer Part # : K6R4016V1D-UI10
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Package/Case: TSOP-II-44
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Part Status : Discontinued
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Brand: Samsung Electro-Mechanics
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Product Categories : Memory
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About After Sales Service
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Initiate the application within 90 days from the shipment date.
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K6R4016V1D-UI10 DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Interested Parts
K6R4016V1D-UI10 Description
The K6R4016V1D-UI10 is a high-speed SRAM chip from Samsung Semiconductor, designed for reliable memory storage and retrieval in electronic devices. This Standard SRAM features 256KX16 bits with an access speed of 10ns, making it suitable for applications where fast data transfer rates are crucial. It operates at a low power consumption level, utilizing just 3.3V with a clock frequency of 100 MHz.
Pin Details
The K6R4016V1D-UI10 pinout consists of 44 pins, formatted as a TSOP-II package for surface-mount technology. The pins provide connections for accessing memory data and control signals, including receiving, driving, enabling, power supply, and ground connections.
Features
- High-Speed Access: Supports access speeds of up to 10ns, making it ideal for applications where fast data transfer rates are essential.
- Low Power Consumption: Operates at low power levels, utilizing just 3.3V with a clock frequency of 100 MHz.
- Wide Temperature Range: Features a wide operating temperature range from -40°C to +125°C.
Applications
The K6R4016V1D-UI10 is commonly used in embedded systems, automotive applications, and industrial control equipment where high-speed memory storage and retrieval are crucial.
Where to Use:
- Embedded systems requiring fast data transfer rates
- Automotive applications demanding reliable memory storage
- Industrial control equipment necessitating timely data access
Manufacturer
The K6R4016V1D-UI10 is manufactured by Samsung Semiconductor, a global leader in semiconductor technology. It falls under the category of SRAM chips, designed to facilitate reliable and high-speed memory storage and retrieval.
Packages
The K6R4016V1D-UI10 comes as a TSOP-II package, offering surface-mount technology for efficient integration into electronic circuits.
Equivalent Parts of K6R4016V1D-UI10
- Other Samsung Semiconductor SRAM Chips: Similar devices from the same manufacturer with comparable features and performance.

Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | SAMSUNG | Product Category ! | IC Chips |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is K6R4016V1D-UI10?
The K6R4016V1D-UI10 is a 4Mx16 bit dynamic random access memory (DRAM) integrated circuit produced by Samsung. It is commonly used in various electronic devices for storing temporary data that needs to be accessed quickly.
How Does K6R4016V1D-UI10 Work?
The K6R4016V1D-UI10 works by storing data in a memory cell that requires periodic refreshing to maintain the data. It uses a combination of row and column addresses to locate and access specific data stored in the memory array. The device operates at high speeds to provide fast access times for read and write operations.
How Many Pins does K6R4016V1D-UI10 have and What are the Functions of the Pinout Configuration?
The K6R4016V1D-UI10 is typically housed in a 44-pin TSOP (Thin Small Outline Package) configuration. The pinout configuration includes:
- VDD, VSS: Power supply and ground pins, respectively.
- Address Pins: Used for specifying the row and column addresses for data access.
- Data Pins: Input/output pins for transferring data to and from the memory array.
- Control Pins: Includes pins for chip enable, write enable, output enable, and clock signals.
What are the Pros and Cons of K6R4016V1D-UI10?
Pros:
- High Density: Offers a large memory capacity in a compact package.
- Fast Access Time: Operates at high speeds for quick data access.
- Reliable: Provides stable performance for data storage applications.
- Industry Standard: Produced by a reputable manufacturer, ensuring quality and compatibility.
Cons:
- Power Consumption: DRAMs can consume more power compared to non-volatile memory types.
- Refresh Requirement: Requires periodic refreshing to maintain stored data.
- Volatility: Data is lost when power is removed, necessitating backup measures for critical data.
Are There Any Equivalents/Alternatives to K6R4016V1D-UI10 for Recommendation?
Some equivalents or alternatives to the K6R4016V1D-UI10 include:
- MT48LC4M16A2 from Micron Technology
- HYB514256B from Infineon Technologies
- IS41LV16100 from Integrated Silicon Solution, Inc. (ISSI)
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Price details
Prices listed do not include VAT.
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