K6R4008V1D-UI10
44-Pin TSOP-II Packaging for Easy Installation and IntegrationK6R4008V1D-UI10
44-Pin TSOP-II Packaging for Easy Installation and Integration
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Manufacturer Part # : K6R4008V1D-UI10
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Package/Case: TSOP-II-44
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Brand: Samsung Electro-Mechanics
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Product Categories : Memory
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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
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About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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K6R4008V1D-UI10 DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Interested Parts
K6R4008V1D-UI10 Description
The K6R4008V1D-UI10 is a 512Mb (8M x 4 banks x 16 bits) DRAM module from Samsung Semiconductor, designed for high-performance computing applications. This device offers fast data transfer rates and low power consumption, making it suitable for various industries such as personal computers, workstations, networking devices, industrial control systems, medical equipment, and telecommunications infrastructure.
Pin Details
The K6R4008V1D-UI10 is a single-chip DRAM module with 44 pins. It includes pins for data input/output, address inputs, chip select, and power supply connections.
Features
- Burst Length: Supports burst lengths of 1, 2, 4, or full page for efficient data transfer.
- Data Transfer Rate: Offers fast data transfer rates up to 133MHz (PC133) for high-performance computing applications.
- Power Consumption: Designed with low power consumption in mind, making it suitable for battery-powered devices and energy-efficient systems.
- Operating Temperature Range: Operates efficiently between -40°C and +85°C, ensuring reliable performance in various environmental conditions.
Applications
The K6R4008V1D-UI10 is widely used in various applications such as personal computers, workstations, networking devices, industrial control systems, medical equipment, and telecommunications infrastructure.
Where to Use:
- Personal computers
- Workstations
- Networking devices
- Industrial control systems
- Medical equipment
- Telecommunications infrastructure
Manufacturer
The K6R4008V1D-UI10 is manufactured by Samsung Semiconductor, a global leader in semiconductor technology.
Packages
The K6R4008V1D-UI10 comes in a 44-pin TSOP (Thin Small Outline Package) for surface-mount technology applications.
Equivalent Parts of K6R4008V1D-UI10
- K4B2G0846E-H51: A comparable DRAM module from Samsung Semiconductor with similar features and performance.
- Micron MT48LC16M8A2: An alternative DRAM module from Micron Technology that offers equivalent functionality.

Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Obsolete | ECCN Code | 3A991.B.2.A |
HTS Code ! | 8542.32.00.41 | Access Time-Max | 10 ns |
I/O Type | COMMON | JESD-30 Code | R-PDSO-G44 |
JESD-609 Code | e1 | Memory Density | 4194304 bit |
Memory IC Type | STANDARD SRAM | Memory Width | 8 |
Moisture Sensitivity Level | 3 | Number of Terminals | 44 |
Number of Words | 524288 words | Number of Words Code | 512000 |
Operating Mode ! | ASYNCHRONOUS | Operating Temperature-Max | 85 °C |
Operating Temperature-Min | -40 °C | Organization | 512KX8 |
Output Characteristics | 3-STATE | Package Body Material | PLASTIC/EPOXY |
Package Code | TSOP | Package Equivalence Code | TSOP44,.46,32 |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE, THIN PROFILE |
Parallel/Serial | PARALLEL | Peak Reflow Temperature (Cel) | 260 |
Power Supplies ! | 3.3 V | Qualification Status ! | Not Qualified |
Standby Current-Max | 0.005 A | Standby Voltage-Min | 3 V |
Supply Current-Max | 0.075 mA | Supply Voltage-Nom (Vsup) | 3.3 V |
Surface Mount ! | YES | Technology | CMOS |
Temperature Grade ! | INDUSTRIAL | Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Terminal Form ! | GULL WING | Terminal Pitch ! | 0.8 mm |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 40 |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is K6R4008V1D-UI10?
The K6R4008V1D-UI10 is a 512K x 8 bit low-power CMOS static RAM (SRAM) memory chip manufactured by Samsung. It is commonly used in various electronic devices and embedded systems for data storage and high-speed access.
How Does K6R4008V1D-UI10 Work?
The K6R4008V1D-UI10 operates as a volatile memory chip where data is stored as long as power is supplied. It offers high-speed access times and low power consumption, making it suitable for applications requiring fast data retrieval with minimal power usage.
How Many Pins does K6R4008V1D-UI10 have and What are the Functions of the Pinout Configuration?
The K6R4008V1D-UI10 is housed in a 32-pin SOJ (Small Outline J-lead) package. The pinout configuration includes:
- VCC: Power supply pin.
- GND: Ground pin.
- CS: Chip select for device activation.
- WE: Write enable for write operations.
- OE: Output enable for data output.
- Address Pins A0-A18: Address inputs for selecting memory location.
- Data Pins DQ0-DQ7: Data input/output pins.
What are the Pros and Cons of K6R4008V1D-UI10?
Pros:
- High-Speed Access: Offers fast access times for efficient data retrieval.
- Low Power Consumption: Operates with low power, extending battery life in portable devices.
- Easy Integration: Simple interface and control signals for easy integration into systems.
- Reliable Storage: Provides non-volatile storage of data as long as power is supplied.
Cons:
- Finite Storage Capacity: Limited to 512K x 8 bits of storage space.
- Volatility: Data is lost when power is turned off, requiring backup solutions for critical data.
- Cost: Higher cost per bit compared to larger capacity storage solutions.
Are There Any Equivalents/Alternatives to K6R4008V1D-UI10 for Recommendation?
Some equivalents or alternatives to the K6R4008V1D-UI10 include:
- IS62WV51216BLL from Integrated Silicon Solution, Inc.
- HY62WT08081E from Hynix Semiconductor.
- HM628128ALP from Hitachi.
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Price details
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