K6R4008C1D-UI10

Name: K6R4008C1D-UI10
Brand: Samsung Electro-Mechanics
Rating: 4.5 (10 reviews)
Author: Lisleapex

This product is a standard SRAM chip with a capacity of 512Kx8 and a fast access time of 10ns."

5,817 Effective Inventory

K6R4008C1D-UI10

Effective Inventory5,817

This product is a standard SRAM chip with a capacity of 512Kx8 and a fast access time of 10ns."

Manufacturer Part # : K6R4008C1D-UI10
Package/Case: TSOP-44
Brand: Samsung Electro-Mechanics
Product Categories : Memory

Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

About Shipping

We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.

About Payment

We accept various payment methods, including VISA, MasterCard, UnionPay, Western Union, PayPal, and other channels.

If you have a specific payment method in mind or would like to inquire about rates and other details, please feel free to contact us.

WireTransfer

Paypal

CreditCard

WesternUnion

MoneyGram

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

Example

Tape and Reel

Cut Tape

Tube or Tray

K6R4008C1D-UI10 DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

Interested Parts

K4E8E324EB-EGCF
Samsung Electro-Mechanics
Min$8.407

Price Dtls.
K4S641632H-TC75
Samsung Electro-Mechanics
K4S561632H-UC75
Samsung Electro-Mechanics
K6X4016C3F-UF55
Samsung Electro-Mechanics
K6X4008C1F-GF55
Samsung Electro-Mechanics
K6X1008C2D-GF55
Samsung Electro-Mechanics
K4B2G1646C-HCH9
Samsung Electro-Mechanics
K4B2G0846B-HCF8
Samsung Electro-Mechanics

Rapid Quote

Please submit RFQ for K6R4008C1D-UI10 or email to us: Email: [email protected], we will contact you in 12 hours.

Quantity^*

Contact Person^*

E-mail^*

Company Name

Anything else?

K6R4008C1D-UI10 Description

The K6R4008C1D-UI10 is a high-performance 512Mb Double Data Rate (DDR) Synchronous Dynamic Random Access Memory (SDRAM) chip manufactured by Samsung, designed for use in various embedded systems and applications.

Features

High-performance DDR SDRAM: Offers fast data transfer rates for demanding applications.
512Mb Capacity: Provides ample memory space for complex embedded systems.
Synchronous Operation: Ensures efficient and reliable data transfer.
Low Power Consumption: Optimized for low power usage, ideal for battery-powered devices.

Applications

The K6R4008C1D-UI10 is suitable for use in various embedded systems and applications that require high-performance memory solutions.

Where to Use:

Embedded Systems: Suitable for use in various embedded systems, including industrial control systems, automotive electronics, and medical devices.
Computing Devices: Can be used in computing devices such as laptops, desktops, and servers.

Manufacturer

The K6R4008C1D-UI10 is manufactured by Samsung, a global leader in semiconductor technology.

Packages

The K6R4008C1D-UI10 comes in a 44-pin FBGA (Flip Chip Ball Grid Array) package. This package is designed for surface-mount technology, offering a compact and efficient solution for integrating the memory chip into electronic circuits.

Equivalent Parts of K6R4008C1D-UI10

Samsung K4H512633E-HC12: A comparable DDR SDRAM chip with similar features and performance.
Micron MT48LC8M16A2PC-6: An alternative DDR SDRAM chip that offers equivalent functionality.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code	Yes	Rohs Code	Yes
Part Life Cycle Code	Obsolete	ECCN Code	3A991.B.2.A
HTS Code !	8542.32.00.41	Access Time-Max	10 ns
I/O Type	COMMON	JESD-30 Code	R-PDSO-G44
JESD-609 Code	e1	Length	18.41 mm
Memory Density	4194304 bit	Memory IC Type	STANDARD SRAM
Memory Width	8	Moisture Sensitivity Level	3
Number of Functions	1	Number of Terminals	44
Number of Words	524288 words	Number of Words Code	512000
Operating Mode !	ASYNCHRONOUS	Operating Temperature-Max	85 °C
Operating Temperature-Min	-40 °C	Organization	512KX8
Output Characteristics	3-STATE	Package Body Material	PLASTIC/EPOXY
Package Code	TSOP2	Package Equivalence Code	TSOP44,.46,32
Package Shape	RECTANGULAR	Package Style	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL	Peak Reflow Temperature (Cel)	260
Power Supplies !	5 V	Qualification Status !	Not Qualified
Seated Height-Max	1.2 mm	Standby Current-Max	0.005 A
Standby Voltage-Min	4.5 V	Supply Current-Max	0.075 mA
Supply Voltage-Max (Vsup)	5.5 V	Supply Voltage-Min (Vsup)	4.5 V
Supply Voltage-Nom (Vsup)	5 V	Surface Mount !	YES
Technology	CMOS	Temperature Grade !	INDUSTRIAL
Terminal Finish	TIN SILVER COPPER	Terminal Form !	GULL WING
Terminal Pitch !	0.8 mm	Terminal Position	DUAL
Width	10.16 mm

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification K6R4008C1D-UI10 PDF Download

FAQs

What is K6R4008C1D-UI10?

The K6R4008C1D-UI10 is a 512K x 8-bit high-speed static random access memory (SRAM) manufactured by Samsung Electronics. It is designed for applications requiring fast and reliable data storage and retrieval, such as cache memory, networking equipment, and high-performance computing systems.

How Does K6R4008C1D-UI10 Work?

The K6R4008C1D-UI10 works by storing data in a volatile memory array that can be accessed randomly at high speeds. It retains data as long as power is supplied and offers fast read and write operations. The SRAM is ideal for applications that demand quick access to data without the latency associated with dynamic RAM.

How Many Pins does K6R4008C1D-UI10 have and What are the Functions of the Pinout Configuration?

The K6R4008C1D-UI10 is housed in a 32-pin TSOP (Thin Small Outline Package) package. The pinout configuration includes:

Vcc: Power supply pin.
GND: Ground pin.
OE, CE: Output Enable and Chip Enable pins for controlling data output and device operation.
A0-A18: Address pins for selecting memory locations.
DQ0-DQ7: Data input/output pins for 8-bit data transfer.
WE: Write Enable pin for initiating write operations.

What are the Pros and Cons of K6R4008C1D-UI10?

Pros:

High-Speed Operation: Provides fast access times for efficient data processing.
Reliability: Offers non-volatile storage of data without the need for constant refresh.
Low Power Consumption: Operates with low power requirements, suitable for energy-efficient systems.
Compatibility: Interfaces easily with microcontrollers and other digital devices.
Compact Form Factor: The 32-pin TSOP package is compact and suitable for space-constrained designs.

Cons:

Volatility: Data is lost when power is interrupted, requiring backup solutions for critical information.
Cost: SRAM memory can be more expensive than other types of memory technologies.
Limited Capacity: SRAM typically offers lower storage capacity compared to other memory types like DRAM or Flash.

Are There Any Equivalents/Alternatives to K6R4008C1D-UI10 for Recommendation?

The CY62128EV30LL-45ZSXI from Cypress Semiconductor is a similar 128K x 8-bit SRAM with comparable specifications.
Alternatives to the K6R4008C1D-UI10 include the AS6C1008-55SIN from Alliance Memory and the IS61C256AH-20N from Integrated Silicon Solution, Inc. (ISSI).