K4S641632N-LC75
Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54K4S641632N-LC75
Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54
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Manufacturer Part # : K4S641632N-LC75
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Package/Case: TSOP-54
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Brand: Samsung Electro-Mechanics
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Product Categories : Power Supply Controllers, Monitors
Quality Assurance
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
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K4S641632N-LC75 DataSheet

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Interested Parts
K4S641632N-LC75 Description
The K4S641632N-LC75 is a 64Mb low power synchronous DRAM with a high-speed clock (up to 133MHz) from Samsung Semiconductor, designed for reliable data transmission in industrial communication applications. This device features high ESD protection, low power consumption, and a wide operating temperature range, making it suitable for various industries that require fast data transfer speeds.
Pin Details
The K4S641632N-LC75 is a 64Mb synchronous DRAM chip with 8 pins for half-duplex communication. It includes pins for receiving, driving, and enabling signals, along with power supply and ground connections.
Pin configuration
- Pin 1 (VCC): Positive Power Supply
- Pin 2 (GND): Ground
- Pin 3 (A0-A15): Address Lines
- Pin 4 (DQ0-DQ7): Data Input/Output
- Pin 5 (WE): Write Enable
- Pin 6 (OE): Output Enable
- Pin 7 (BS0-BS2): Burst Sequence Select
- Pin 8 (CK): Clock Input
Features
- High-Speed Operation: Operates at a speed of up to 133MHz for fast data transfer.
- Low Power Consumption: Optimized for low power consumption, making it suitable for battery-powered devices.
- Wide Operating Temperature Range: Functions within a wide temperature range of -40°C to +85°C.
- High ESD Protection: Provides high electrostatic discharge (ESD) protection for reliable operation in harsh environments.
Applications
The K4S641632N-LC75 is suitable for various applications that require fast data transfer speeds, including industrial automation, medical devices, and automotive systems.
Where to Use:
- Industrial Automation: Suitable for industrial automation systems that require high-speed data transfer.
- Medical Devices: Can be used in medical devices that require fast data transfer speeds, such as ultrasound machines and MRI scanners.
- Automotive Systems: Suitable for automotive systems that require high-speed data transfer, including infotainment systems and autonomous vehicles.
Manufacturer
The K4S641632N-LC75 is manufactured by Samsung Semiconductor, a global leader in semiconductor technology.
Packages
The K4S641632N-LC75 comes in a 100-pin TSOP (Thin Small-Outline Package) for surface-mount technology.
Equivalent Parts of K4S641632N-LC75
- K4T510633E: A comparable synchronous DRAM chip from Samsung Semiconductor with similar features and performance.
- Micron MT48LC8M16A2: An alternative synchronous DRAM chip that offers equivalent functionality.

Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | Yes | Part Life Cycle Code | Obsolete |
ECCN Code | EAR99 | HTS Code ! | 8542.32.00.02 |
Access Time-Max | 5.4 ns | Clock Frequency-Max (fCLK) | 133 MHz |
I/O Type | COMMON | Interleaved Burst Length | 1,2,4,8 |
JESD-30 Code | R-PDSO-G54 | JESD-609 Code | e6 |
Memory Density | 67108864 bit | Memory IC Type | SYNCHRONOUS DRAM |
Memory Width | 16 | Moisture Sensitivity Level | 3 |
Number of Terminals | 54 | Number of Words | 4194304 words |
Number of Words Code | 4000000 | Operating Temperature-Max | 70 °C |
Organization | 4MX16 | Output Characteristics | 3-STATE |
Package Body Material | PLASTIC/EPOXY | Package Code | TSOP |
Package Equivalence Code | TSOP54,.46,32 | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE, THIN PROFILE | Peak Reflow Temperature (Cel) | 260 |
Power Supplies ! | 3.3 V | Qualification Status ! | Not Qualified |
Refresh Cycles | 4096 | Sequential Burst Length | 1,2,4,8,FP |
Standby Current-Max | 0.002 A | Supply Current-Max | 0.11 mA |
Supply Voltage-Nom (Vsup) | 3.3 V | Surface Mount ! | YES |
Technology | CMOS | Temperature Grade ! | COMMERCIAL |
Terminal Finish | TIN BISMUTH | Terminal Form ! | GULL WING |
Terminal Pitch ! | 0.8 mm | Terminal Position | DUAL |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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