K4S641632F-TC60
Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54K4S641632F-TC60
Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
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Manufacturer Part # : K4S641632F-TC60
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Package/Case: TSOP54
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Brand: Samsung Electro-Mechanics
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Product Categories : Memory
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.






Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
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Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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K4S641632F-TC60 DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
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K4S641632F-TC60 Details
The K4S641632F-TC60 is a 64Mb Synchronous DRAM designed and manufactured by Samsung Semiconductor. It features 4 Banks, 4K Refresh, and a clock frequency of 133MHz. The operating voltage is 3.3V, with low power consumption and fast data transfer rates.
The K4S641632F-TC60 is suitable for use in various applications, including computer systems, graphic cards, network switches, communication equipment, and industrial machinery. It is specifically designed for high-speed memory operations and is suitable for use in devices that require reliable and fast data storage and retrieval.
K4S641632F-TC60 Key Features
- 64Mb Synchronous DRAM
- 4 Banks, 4K Refresh
- Clock frequency of 133MHz
- Operating voltage of 3.3V
- Low power consumption
- Fast data transfer rates
- Burst length of 1
- Auto precharge option
- RoHS compliant
K4S641632F-TC60 Product Usage
The K4S641632F-TC60 is commonly used in various applications, including:
Computer Systems:
- Desktop computers and laptops
- Server systems and data centers
- Embedded systems and industrial control devices
Graphic Cards and Gaming Consoles:
- Graphics processing units (GPUs)
- Gaming consoles and handheld game players
Network Switches and Communication Equipment:
- Network switches and routers
- Communication equipment and modems
K4S641632F-TC60 Circuit Diagram
A sample circuit diagram using the K4S641632F-TC60 might involve:
- Power Supply: Connect a suitable voltage supply (within the operational range) to the Vcc pin.
- Memory Interface: Connect the memory interface signals (e.g., DQ, DQS, and DM) according to the datasheet specifications.
- Timing Signals: Apply the required timing signals (e.g., CK, CKE, and RAS) as specified in the datasheet.
K4S641632F-TC60 Quality and Reliability
Samsung Semiconductor's commitment to quality ensures that the K4S641632F-TC60 is reliable and performs consistently. It is designed to meet the stringent requirements of industrial and commercial applications, where consistent operation and long service life are critical.
K4S641632F-TC60 Ordering Information
The K4S641632F-TC60 is available in tape and reel packaging, facilitating efficient assembly for high-volume production. Its product identification, including the temperature range and package type, is clearly specified for ease of ordering.
K4S641632F-TC60 Package and Quality
The K4S641632F-TC60 is housed in a compact, thermally efficient package, making it suitable for space-constrained designs without compromising on thermal management or performance. Samsung Semiconductor ensures that each unit undergoes rigorous testing to meet stringent industrial and commercial standards. This emphasis on quality guarantees that the K4S641632F-TC60 delivers dependable, long-term performance across a wide range of operational environments.
Conclusion
The K4S641632F-TC60 from Samsung Semiconductor is an ideal choice for engineers seeking a reliable 64Mb Synchronous DRAM for high-speed memory operations. With its fast data transfer rates, low power consumption, and robust performance, it is well-suited for use in various applications across computer systems, graphic cards, network switches, and communication equipment.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | No | Part Life Cycle Code | Obsolete |
Part Package Code | TSOP2 | Pin Count ! | 54 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
HTS Code ! | 8542.32.00.02 | Access Mode ! | FOUR BANK PAGE BURST |
Access Time-Max | 5 ns | Additional Feature ! | AUTO/SELF REFRESH |
Clock Frequency-Max (fCLK) | 166 MHz | I/O Type | COMMON |
Interleaved Burst Length | 1,2,4,8 | JESD-30 Code | R-PDSO-G54 |
JESD-609 Code | e0 | Length | 22.22 mm |
Memory Density | 67108864 bit | Memory IC Type | SYNCHRONOUS DRAM |
Memory Width | 16 | Number of Functions | 1 |
Number of Ports ! | 1 | Number of Terminals | 54 |
Number of Words | 4194304 words | Number of Words Code | 4000000 |
Operating Mode ! | SYNCHRONOUS | Operating Temperature-Max | 70 °C |
Organization | 4MX16 | Output Characteristics | 3-STATE |
Package Body Material | PLASTIC/EPOXY | Package Code | TSOP2 |
Package Equivalence Code | TSOP54,.46,32 | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE, THIN PROFILE | Power Supplies ! | 3.3 V |
Qualification Status ! | Not Qualified | Refresh Cycles | 4096 |
Seated Height-Max | 1.2 mm | Self Refresh | YES |
Sequential Burst Length | 1,2,4,8,FP | Standby Current-Max | 0.001 A |
Supply Current-Max | 0.16 mA | Supply Voltage-Max (Vsup) | 3.6 V |
Supply Voltage-Min (Vsup) | 3 V | Supply Voltage-Nom (Vsup) | 3.3 V |
Surface Mount ! | YES | Technology | CMOS |
Temperature Grade ! | COMMERCIAL | Terminal Finish | TIN LEAD |
Terminal Form ! | GULL WING | Terminal Pitch ! | 0.8 mm |
Terminal Position | DUAL | Width | 10.16 mm |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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