K4H561638H-UCB3
16MX16 DDR DRAM 0.7ns CMOS PDSO66K4H561638H-UCB3
16MX16 DDR DRAM 0.7ns CMOS PDSO66
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Manufacturer Part # : K4H561638H-UCB3
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Package/Case: TSSOP66
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Brand: Samsung Electro-Mechanics
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Product Categories : Memory
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.






Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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K4H561638H-UCB3 DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Interested Parts
K4H561638H-UCB3 Description
The K4H561638H-UCB3 is a high-performance memory chip from Samsung, designed for use in various electronic devices that require fast and reliable data storage. This device features advanced error correction mechanisms, fully programmable settings, and a compact module footprint design.
Pin Details
The K4H561638H-UCB3 is a high-speed memory chip with 66 pins for half-duplex communication. It includes pins for receiving, driving, and enabling signals, along with power supply and ground connections.
Pin configuration
- Pin 1 (RO): Receiver Output
- Pin 2 (RE): Receiver Output Enable
- Pin 3 (DE): Driver Output Enable
- Pin 4 (DI): Driver Input
- Pin 5 (GND): Ground
- Pin 6 (A): Non-inverting Receiver Input/Driver Output
- Pin 7 (B): Inverting Receiver Input/Driver Output
- Pin 66: Power Supply
Features
The K4H561638H-UCB3 features advanced error correction mechanisms, fully programmable settings, and a compact module footprint design. It also has high-speed data transfer capabilities, making it suitable for use in various electronic devices that require fast and reliable data storage.
Applications
The K4H561638H-UCB3 is commonly used in systems that require fast and reliable data storage, such as smartphones, laptops, and servers.
Where to Use:
- Smartphones
- Laptops
- Servers
- Embedded systems
Manufacturer
The K4H561638H-UCB3 is manufactured by Samsung, a global leader in semiconductor technology.
Packages
The K4H561638H-UCB3 comes in an 66-pin BGA (Ball Grid Array) package. This package is designed for surface-mount technology, offering a compact and efficient solution for integrating the chip into electronic circuits.
Equivalent Parts of K4H561638H-UCB3
- Samsung K4H511636E-HC50: A comparable memory chip from Samsung with similar features and performance.
- Micron MT41J512M8AH: An alternative memory chip that offers equivalent functionality.

Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Obsolete | Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC |
ECCN Code | EAR99 | HTS Code ! | 8542.32.00.24 |
Samacsys Manufacturer | SAMSUNG | Access Time-Max | 0.7 ns |
Clock Frequency-Max (fCLK) | 166 MHz | I/O Type | COMMON |
Interleaved Burst Length | 2,4,8 | JESD-30 Code | R-PDSO-G66 |
JESD-609 Code | e6 | Memory Density | 268435456 bit |
Memory IC Type | DDR1 DRAM | Memory Width | 16 |
Moisture Sensitivity Level | 3 | Number of Terminals | 66 |
Number of Words | 16777216 words | Number of Words Code | 16000000 |
Operating Temperature-Max | 70 °C | Organization | 16MX16 |
Output Characteristics | 3-STATE | Package Body Material | PLASTIC/EPOXY |
Package Code | TSSOP | Package Equivalence Code | TSSOP66,.46 |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
Peak Reflow Temperature (Cel) | 260 | Power Supplies ! | 2.3 V |
Qualification Status ! | Not Qualified | Refresh Cycles | 8192 |
Sequential Burst Length | 2,4,8 | Standby Current-Max | 0.003 A |
Supply Current-Max | 0.33 mA | Supply Voltage-Nom (Vsup) | 2.3 V |
Surface Mount ! | YES | Technology | CMOS |
Temperature Grade ! | COMMERCIAL | Terminal Finish | TIN BISMUTH |
Terminal Form ! | GULL WING | Terminal Pitch ! | 0.635 mm |
Terminal Position | DUAL |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
Prices listed do not include VAT.
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