K4H511638C-UCCC
DDR DRAM, 32MX16, 0.65ns, CMOS, PDSO66,K4H511638C-UCCC
DDR DRAM, 32MX16, 0.65ns, CMOS, PDSO66,
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Manufacturer Part # : K4H511638C-UCCC
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Package/Case: TSSOP-66
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Brand: Samsung Electro-Mechanics
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Product Categories : Memory
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.






Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
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Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
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K4H511638C-UCCC DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Interested Parts
K4H511638C-UCCC Description
The K4H511638C-UCCC is a 512MB DDR3 SDRAM chip from Samsung, designed for high-performance memory expansion in various computing devices. This device features a capacity of 2GB, operates at a voltage of 1.5V, and has a speed of 1333MHz.
Features
- High-Speed Operation: Supports speeds up to 1333MHz for high-performance memory expansion.
- Low Power Consumption: Optimized for low power usage, ideal for battery-powered devices.
- Wide Temperature Range: Operates efficiently between -40°C and +85°C.
Applications
The K4H511638C-UCCC is commonly used in various computing devices that require high-performance memory expansion, such as laptops, desktop computers, servers, routers, and networking equipment.
Where to Use:
- Laptops and desktop computers for memory-intensive tasks
- Servers and data centers for high-performance storage
- Routers and networking equipment for reliable communication
Manufacturer
The K4H511638C-UCCC is manufactured by Samsung, a global leader in semiconductor technology. It falls under the category of DDR3 SDRAM chips, which are designed to provide high-performance memory expansion in various computing devices.
Packages
The K4H511638C-UCCC comes in a BGA (Ball Grid Array) package, which is designed for surface-mount technology and offers a compact and efficient solution for integrating the chip into electronic circuits.
Equivalent Parts of K4H511638C-UCCC
- K4T510633E-HC8: A comparable DDR3 SDRAM chip from Samsung with similar features and performance.
- Micron MT41J51236P8AH-125: An alternative DDR3 SDRAM chip that offers equivalent functionality.

Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Obsolete | ECCN Code | EAR99 |
HTS Code ! | 8542.32.00.28 | Access Time-Max | 0.65 ns |
Clock Frequency-Max (fCLK) | 200 MHz | I/O Type | COMMON |
Interleaved Burst Length | 2,4,8 | JESD-30 Code | R-PDSO-G66 |
JESD-609 Code | e6 | Memory Density | 536870912 bit |
Memory IC Type | DDR1 DRAM | Memory Width | 16 |
Moisture Sensitivity Level | 3 | Number of Terminals | 66 |
Number of Words | 33554432 words | Number of Words Code | 32000000 |
Operating Temperature-Max | 70 °C | Organization | 32MX16 |
Output Characteristics | 3-STATE | Package Body Material | PLASTIC/EPOXY |
Package Code | TSSOP | Package Equivalence Code | TSSOP66,.46 |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
Peak Reflow Temperature (Cel) | 260 | Power Supplies ! | 2.6 V |
Qualification Status ! | Not Qualified | Refresh Cycles | 8192 |
Sequential Burst Length | 2,4,8 | Standby Current-Max | 0.005 A |
Supply Current-Max | 0.4 mA | Supply Voltage-Nom (Vsup) | 2.6 V |
Surface Mount ! | YES | Technology | CMOS |
Temperature Grade ! | COMMERCIAL | Terminal Finish | TIN BISMUTH |
Terminal Form ! | GULL WING | Terminal Pitch ! | 0.635 mm |
Terminal Position | DUAL |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
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