K4D261638K-LC40

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8MX16 GDDR1 DRAM module featuring a latency of 0.6ns, built on CMOS architecture, and encased in a PDSO66 package

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Quality Assurance

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Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

Shipping & Payment

About Shipping

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

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About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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K4D261638K-LC40 DataSheet

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Rapid Quote

Please submit RFQ for K4D261638K-LC40 or email to us: Email: [email protected], we will contact you in 12 hours.

K4D261638K-LC40 Details

GENERAL DESCRIPTIONFOR 1M x 32Bit x 4 Bank DDR SDRAMThe K4D263238D is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 2.0GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.FEATURES• 2.5V ± 5% power supply• SSTL_2 compatible inputs/outputs• 4 banks operation• MRS cycle with address key programs -. Read latency 3,4 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst type (sequential & interleave)• Full page burst length for sequential burst type only• Start address of the full page burst should be even• All inputs except data & DM are sampled at the positive going edge of the system clock• Differential clock input• No Write Interrupted by Read function• Data I/O transactions on both edges of Data strobe• DLL aligns DQ and DQS transitions with Clock transition• Edge aligned data & data strobe output• Center aligned data & data strobe input• DM for write masking only• Auto & Self refresh• 32ms refresh period (4K cycle)• 100pin TQFP package• Maximum clock frequency up to 250MHz• Maximum data rate up to 500Mbps/pin

Key Features

  • 2.5V ± 5% power supply
  • SSTL_2 compatible inputs/outputs
  • 4 banks operation
  • MRS cycle with address key programs
  • -. Read latency 3,4 (clock)
  • -. Burst length (2, 4, 8 and Full page)
  • -. Burst type (sequential & interleave)
  • Full page burst length for sequential burst type only
  • Start address of the full page burst should be even
  • All inputs except data & DM are sampled at the positive going edge of the system clock
  • Differential clock input
  • No Write Interrupted by Read function
  • Data I/O transactions on both edges of Data strobe
  • DLL aligns DQ and DQS transitions with Clock transition
  • Edge aligned data & data strobe output
  • Center aligned data & data strobe input
  • DM for write masking only
  • Auto & Self refresh
  • 32ms refresh period (4K cycle)
  • 100pin TQFP package
  • Maximum clock frequency up to 250MHz
  • Maximum data rate up to 500Mbps/pin

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code Yes Part Life Cycle Code Obsolete
Reach Compliance Code ECCN Code EAR99
HTS Code ! 8542.32.00.02 Access Mode ! FOUR BANK PAGE BURST
Access Time-Max 0.6 ns Additional Feature ! AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 250 MHz I/O Type COMMON
Interleaved Burst Length 2,4,8 JESD-30 Code R-PDSO-G66
Length 22.22 mm Memory Density 134217728 bit
Memory IC Type GDDR1 DRAM Memory Width 16
Moisture Sensitivity Level 3 Number of Functions 1
Number of Ports ! 1 Number of Terminals 66
Number of Words 8388608 words Number of Words Code 8000000
Operating Mode ! SYNCHRONOUS Operating Temperature-Max 65 °C
Operating Temperature-Min Organization 8MX16
Output Characteristics 3-STATE Package Body Material PLASTIC/EPOXY
Package Code TSOP2 Package Equivalence Code TSSOP66,.46
Package Shape RECTANGULAR Package Style SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel) 260 Power Supplies ! 2.5 V
Qualification Status ! Not Qualified Refresh Cycles 4096
Seated Height-Max 1.2 mm Self Refresh YES
Sequential Burst Length 2,4,8 Standby Current-Max 0.045 A
Supply Current-Max 0.35 mA Supply Voltage-Max (Vsup) 2.625 V
Supply Voltage-Min (Vsup) 2.375 V Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount ! YES Technology CMOS
Temperature Grade ! COMMERCIAL Terminal Form ! GULL WING
Terminal Pitch ! 0.65 mm Terminal Position DUAL
Width 10.16 mm

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification K4D261638K-LC40 PDF Download

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