K4B2G1646C-HCH9

The K4B2G1646C-HCH9 chip is a DDR4 SDRAM produced by Samsung
7,460 Effective Inventory

K4B2G1646C-HCH9

Effective Inventory7,460

The K4B2G1646C-HCH9 chip is a DDR4 SDRAM produced by Samsung

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All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

Shipping & Payment

About Shipping

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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K4B2G1646C-HCH9 DataSheet
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Please submit RFQ for K4B2G1646C-HCH9 or email to us: Email: [email protected], we will contact you in 12 hours.

K4B2G1646C-HCH9 Description

The K4B2G1646C-HCH9 is a high-performance DDR DRAM module from Samsung Semiconductor, designed for reliable data transmission in various memory-intensive applications. This 128M X 16 DDR DRAM features 2133MHz memory speed, single 1.35V power supply, and offers advanced features such as 8-bit pre-fetch, serial presence detect with EEPROM, high temperature self-refresh, and auto-refresh and self-refresh modes. It is housed in a JEDEC standard 78-ball FBGA package.

Features

  • 2Gb DDR3 SDRAM: Offers vast storage capacity for demanding applications.
  • 2133MHz Memory Speed: Enables fast data transfer and processing.
  • Singe 1.35V Power Supply: Simplifies power management and reduces power consumption.
  • 8-Bit Pre-Fetch: Enhances memory access performance.
  • Serial Presence Detect with EEPROM: Allows for easy module identification and configuration.
  • High Temperature Self-Refresh: Ensures reliable operation in high-temperature environments.
  • Auto-Refresh and Self-Refresh Modes: Supports power-saving modes with minimal performance impact.

Applications

The K4B2G1646C-HCH9 is suitable for various applications that require reliable data transmission, including computer memory, mobile devices, tablets, digital cameras, netbooks, printers, industrial machinery, automotive electronics, drones, and medical devices.

Manufacturer

The K4B2G1646C-HCH9 is manufactured by Samsung Semiconductor, a leading provider of advanced memory solutions.

Packages

This K4B2G1646C-HCH9 module comes in a JEDEC standard 78-ball FBGA package for efficient integration into electronic circuits.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code Yes Part Life Cycle Code Obsolete
Reach Compliance Code compliant ECCN Code EAR99
HTS Code ! 8542.32.00.36 Access Time-Max 0.255 ns
Clock Frequency-Max (fCLK) 667 MHz I/O Type COMMON
Interleaved Burst Length 4,8 JESD-30 Code R-PBGA-B96
JESD-609 Code e1 Memory Density 2147483648 bit
Memory IC Type DDR3 DRAM Memory Width 16
Moisture Sensitivity Level 3 Number of Terminals 96
Number of Words 134217728 words Number of Words Code 128000000
Operating Temperature-Max 85 °C Organization 128MX16
Output Characteristics 3-STATE Package Body Material PLASTIC/EPOXY
Package Code FBGA Package Equivalence Code BGA96,9X16,32
Package Shape RECTANGULAR Package Style GRID ARRAY, FINE PITCH
Peak Reflow Temperature (Cel) 260 Power Supplies ! 1.5 V
Qualification Status ! Not Qualified Refresh Cycles 8192
Sequential Burst Length 4,8 Standby Current-Max 0.012 A
Supply Current-Max 0.245 mA Supply Voltage-Nom (Vsup) 1.5 V
Surface Mount ! YES Technology CMOS
Temperature Grade ! OTHER Terminal Finish TIN SILVER COPPER
Terminal Form ! BALL Terminal Pitch ! 0.8 mm
Terminal Position BOTTOM Time@Peak Reflow Temperature-Max (s) 30

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification K4B2G1646C-HCH9 PDF Download

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